BLF543

BLF543 PHILIPS | Alldatasheet

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Technical content

Product specification October 1992 DISCRETE SEMICONDUCTORS BLF543 UHF power MOS transistor

Philips Semiconductors Product specification UHF power MOS transistor BLF543

FEATURES

• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures excellent reliability
• Designed for broadband operation.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange. The devices are marked with a V GS indication intended for matched pair applications. PINNING - SOT171 PIN DESCRIPTION 1 source 2 source 3 gate 4 drain 5 source 6 source PIN CONFIGURATION CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Fig.1 Simplified outline and symbol. fpage MBA931 - 1 Top view s d g MBB072 QUICK REFERENCE DATA RF performance at Th = 25°C in a common source class-B circuit. MODE OF OPERATION f (MHz) VDS (V) PL (W) G p (dB) ηD (%) CW, class-B 500 28 10 > 12 > 50 CW, class-B 960 28 10 typ. 8 typ. 50

Philips Semiconductors Product specification UHF power MOS transistor BLF543 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V ±VGS gate-source voltage − 20 V ID DC drain current − 2A Ptot total power dissipation up to T mb =2 5°C − 25 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER THERMAL RESISTANCE R th j-mb thermal resistance from junction to mounting base 7 K/W R th mb-h thermal resistance from mounting base to heatsink 0.4 K/W Fig.2 DC SOAR. (1) Current in this area may be limited by RDS(on). (2) Tmb =2 5°C. handbook, halfpage 10−1 11 0 1 0 2 (1) ID (A) VDS (V) MRA991 (2) Fig.3 Power/temperature derating curves. (1) Continuous operation. (2) Short-time operation during mismatch. handbook, halfpage 0 40 80 160 120 MDA488 (2) (1) Ptot (W) Th (°C)

Philips Semiconductors Product specification UHF power MOS transistor BLF543 CHARACTERISTICS Tj = 25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 5 mA 65 −− V IDSS drain-source leakage current VGS = 0; VDS = 28 V −− 0.5 mA IGSS gate-source leakage current ±VGS = 20 V; VDS =0 −− 1 µA VGS(th) gate-source threshold voltage ID = 20 mA; VDS = 10 V 1 − 4V ΔVGS(th) gate-source voltage difference of matched pairs ID = 20 mA; VDS = 10 V −− 100 mV gfs forward transconductance I D = 0.6 A; VDS = 10 V 300 450 − mS R DS(on) drain-source on-state resistance ID = 0.6 A; VGS = 10 V − 1.7 2.5 Ω IDSX on-state drain current V GS = 15 V; VDS = 10 V − 2.4 − A C is input capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 16 − pF C os output capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 12 − pF C rs feedback capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 3.2 − pF Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values. VDS = 10 V. handbook, halfpage4 MDA491 T.C. (mV/K) ID (A)10−2 10−1 Fig.5 Drain current as a function of gate-source voltage, typical values. VDS = 10 V; Tj= 25°C. handbook, halfpage VGS (V) ID (A) 10 20 15 MDA495

Philips Semiconductors Product specification UHF power MOS transistor BLF543 Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values. ID = 0.6 A; VGS = 10 V. handbook, halfpage 0 50 100 150 MDA496 R DSon (Ω ) Tj ( °C) Fig.7 Input and output capacitance as functions of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 01 0 VDS (V) C (pF) 20 30 MDA497 C is C os Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 01 0 VDS (V) C rs (pF) 20 30 MDA498

Philips Semiconductors Product specification UHF power MOS transistor BLF543 APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25°C; Rthmb-h = 0.4 K/W, unless otherwise specified. RF performance in a common source class-B circuit. MODE OF OPERATION f (MHz) VDS (V) IDQ (mA) PL (W) G p (dB) ηD (%) CW class-B 500 28 20 10 > 12 typ. 15 > 50 typ. 60 CW class-B 960 28 20 10 typ. 8 typ. 50 CW class-B 960 24 20 7.5 typ. 8 typ. 50 Ruggedness in class-B operation The BLF543 is capable of withstanding a full load mismatch corresponding to VSWR = 50 through all phases under the following conditions: V DS = 28 V; f = 500 MHz at rated output power. Fig.9 Power gain and efficiency as functions of load power, typical values. Class-B operation; VDS = 28 V; IDQ = 20 mA; ZL = 8.4+ j14.3Ω ; f = 500 MHz. handbook, halfpage G p ηD G p (dB) ηD (%) PL (W) 10 15 MDA490 Fig.10 Load power as a function of input power, typical values. Class-B operation; VDS = 28 V; IDQ = 20 mA; ZL = 8.4+ j14.3Ω ; f = 500 MHz. handbook, halfpage 0.5 PL (W) PIN (W) 1 1.5 MDA489

Philips Semiconductors Product specification UHF power MOS transistor BLF543 Fig.11 Test circuit for class-B operation at 500 MHz. handbook, full pagewidth MDA500 D.U.T. C12 L1 L2 L3C1 L4 L7 L8 L6 R5 C16 50 Ω output50 Ω input +VD R3 R4 C11 C15 C14 C13BLF543 /,/,/,/, /,/,/,/, C10 /,/,/,

Philips Semiconductors Product specification UHF power MOS transistor BLF543 List of components (class-B test circuit at 500 MHz) Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (ε r = 2.2); thickness1⁄32 inch. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C6, C9, C16 multilayer ceramic chip capacitor (note 1) 390 pF C2, C14 multilayer ceramic chip capacitor (note 1) 7.5 pF C3, C5, C13, C15 film dielectric trimmer 9 pF 2222 809 09002 C4 multilayer ceramic chip capacitor (note 1) 20 pF C7 multilayer ceramic chip capacitor 2 × 100 nF in parallel, 50 V 2222 852 47104 C8, C10 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C11 aluminium electrolytic capacitor 10 µF, 63 V 2222 030 28109 C12 multilayer ceramic chip capacitor (note 1) 22 pF L1 1 turn enamelled 0.8 mm copper wire 11 nH int. dia. 4.7 mm leads 2× 5 mm L2 stripline (note 2) 42.5 Ω 14.5× 3 mm L3, L4 stripline (note 2) 42.5 Ω 6 × 3 mm L5 7 turns enamelled 1 mm copper wire 124 nH length 7.8 mm int. dia. 4 mm leads 2× 5 mm L6 grade 3B Ferroxcube RF choke 4312 020 36640 L7 stripline (note 2) 55.7 Ω 31 × 2 mm L8 1 turn enamelled 1 mm copper wire 8 nH int. dia. 3.2 mm leads 2× 5 mm R1, R2 0.4 W metal film resistor 1 k Ω 2322 151 71002 R3 10 turns cermet potentiometer 5 k Ω R4 0.4 W metal film resistor 19.6 k Ω 2322 151 71963 R5 1 W metal film resistor 10 Ω 2322 153 51009

Philips Semiconductors Product specification UHF power MOS transistor BLF543 Fig.12 Component layout for 500 MHz class-B test circuit. The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. handbook, full pagewidth 52 mm 59 mm 6 mm 70 mm strapstrap mounting screw rivet BLF543 C11 C10 C4C2 L1C1 C8 C9 L4L3 L2 L7 C12 L8 C16 C14 C13 C15C3 C5 +V G +VD MDA487

Philips Semiconductors Product specification UHF power MOS transistor BLF543 Fig.13 Test circuit for class-B operation at 960 MHz. handbook, full pagewidth MDA499 D.U.T. C14 L1 L2 L3C1 L5 L8 L9 L8 R4 L10 C10 C17 50 Ω output50 Ω input +VD C6C2 R2 R1 C12 C13 C16C15 C11 BLF543 /,/,/,/,/,

Philips Semiconductors Product specification UHF power MOS transistor BLF543 List of components (class-B test circuit at 960 MHz) Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (ε r = 2.2); thickness1⁄32 inch. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C8, C10, C17 multilayer ceramic chip capacitor (note 1) 68 pF C2 multilayer ceramic chip capacitor (note 2) 4.7 pF C3, C5, C15, C16 film dielectric trimmer 1.2 to 5.5 pF 2222 808 00004 C4 multilayer ceramic chip capacitor (note 2) 2 × 5.6 pF in parallel C6, C7 multilayer ceramic chip capacitor (note 2) 7.5 pF C9, C12 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C14 multilayer ceramic chip capacitor (note 2) 2 × 4.7 pF in parallel C11, C13 aluminum electrolytic capacitor 10 µF, 63 V 2222 030 28109 L1 stripline (note 3) 50 Ω 12.5× 2.5 mm L2 stripline (note 3) 50 Ω 19 × 2.5 mm L3 stripline (note 3) 50 Ω 29.5× 2.5 mm L4, L5 stripline (note 3) 42.5 Ω 3 × 3 mm L6 3 turns enamelled 0.8 mm copper wire 35 nH length 4.6 mm int. dia. 4 mm leads 2× 5 mm L7 stripline (note 3) 50 Ω 12.5× 2.5 mm L8 stripline (note 3) 50 Ω 28.5× 2.5 mm L9 stripline (note 3) 50 Ω 20.5× 2.5 mm L10 grade 3B Ferroxcube RF choke 4312 020 36640 R1 0.4 W metal film resistor 205 k Ω 2322 151 72054 R2 10 turns potentiometer 50 k Ω R3 0.4 W metal film resistor 10 k Ω 2322 151 71003 R4 0.4 W metal film resistor 10 Ω 2322 153 51009

Philips Semiconductors Product specification UHF power MOS transistor BLF543 Fig.14 Input impedance as a function of frequency (series components), typical values. Class-B operation; VDS = 28 V; IDQ = 20 mA; PL = 10 W. handbook, halfpage ri xi 200 400 600 −20 −30 −10 MDA492 Zi (Ω ) f (MHz) Fig.15 Load impedance as a function of frequency (series components), typical values. Class-B operation; VDS = 28 V; IDQ = 20 mA; PL = 10 W. handbook, halfpage R L 200 400 600 MDA494 ZL (Ω ) f (MHz) XL Fig.16 Power gain as a function of frequency, typical values. Class-B operation; VDS = 28 V; IDQ = 20 mA; PL = 10 W. handbook, halfpage 200 G p (dB) f (MHz) 400 600 MDA493 Optimum input and load impedances Optimum input impedance: 2.3+ j9.5Ω . Optimum load impedance: 4.3+ j8.6Ω . Conditions: class-B operation; VDS = 24 V; IDQ = 20 mA; f = 960 MHz; PL = 7.5 W; typical values.

Philips Semiconductors Product specification UHF power MOS transistor BLF543 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT171A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 6 leads SOT171A U 2 EE1H Q D D 1 A F c A b Mw 3 H 1 M Cw 2 e U 1 q p C w 1 ABM B UNIT A mm Db 2.15 1.85 3.20 2.89 0.16 0.07 9.25 9.04 D 1 9.30 8.99 E 5.95 5.74 3.58 11.31 10.54 6.00 5.70 6.81 6.07 c E1 U 2 0.260.51 1.02 w 3 18.42 qw 2w 1F 3.05 2.54 U 1 24.90 24.63 H 1 9.27 9.01 p 3.43 3.17 Q 4.32 4.11 e 6.00 5.70 inches 0.085 0.073 0.126 0.114 0.006 0.003 0.364 0.356 0.366 0.354 0.234 0.226 0.140 0.445 0.415 0.236 0.224 0.268 0.100 0.980 0.970 0.365 0.355 0.135 0.125 0.170 0.162 0.236 0.224 H DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification UHF power MOS transistor BLF543 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.