BLF522

BLF522 PHILIPS | Alldatasheet

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Technical content

Product specification September 1992 DISCRETE SEMICONDUCTORS BLF522 UHF power MOS transistor

Philips Semiconductors Product specification UHF power MOS transistor BLF522

FEATURES

• High power gain
• Easy power control
• Gold metallization
• Good thermal stability
• Withstands full load mismatch
• Designed for broadband operation.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange. PINNING - SOT171 PIN DESCRIPTION 1 source 2 source 3 gate 4 drain 5 source 6 source PIN CONFIGURATION CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Fig.1 Simplified outline and symbol. halfpage MBA931 - 1 Top view s d g MBB072 QUICK REFERENCE DATA RF performance at Th = 25°C in a common source class-B circuit. MODE OF OPERATION f (MHz) VDS (V) PL (W) GP (dB) ηD (%) CW, class-B 500 12.5 5 > 10 > 50

Philips Semiconductors Product specification UHF power MOS transistor BLF522 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 40 V ±VGS gate-source voltage − 20 V ID DC drain current − 1.8 A Ptot total power dissipation up to T mb =2 5°C − 20 W Tstg storage temperature −65 150 °C Ti junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-mb thermal resistance from junction to mounting base Tmb =2 5°C; Ptot= 20 W 8.8 K/W R th mb-h thermal resistance from mounting base to heatsink Tmb =2 5°C; Ptot= 20 W 0.4 K/W Fig.2 DC SOAR. (1) Current in this area may be limited by RDS(on). (2) Tmb =2 5°C. handbook, halfpage 0.1 1 10 100 ID (A) VDS (V) MRA990 (2)(1) Fig.3 Power/temperature derating curves. (1) Continuous operation. (2) Short-time operation during mismatch. handbook, halfpage (2) 0 20 40 60 80 100 120 MRA427 Ptot (W) Th (oC) (1)

Philips Semiconductors Product specification UHF power MOS transistor BLF522 CHARACTERISTICS Tj = 25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 5 mA 40 −− V IDSS drain-source leakage current VGS = 0; VDS = 12.5 V −− 0.5 mA IGSS gate-source leakage current ±VGS = 20 V; VDS =0 −− 1 µA VGS(th) gate-source threshold voltage ID = 50 mA; VDS = 10 V 2 − 4.5 V gfs forward transconductance I D = 0.7 A; VDS = 10 V 200 270 − mS R DS(on) drain-source on-state resistance ID = 0.7 A; VGS = 15 V − 1.8 2.7 Ω IDSX on-state drain current V GS = 15 V; VDS = 10 V − 2.3 − A C is input capacitance V GS = 0; VDS = 12.5 V; f = 1 MHz− 14 − pF C os output capacitance V GS = 0; VDS = 12.5 V; f = 1 MHz− 17 − pF C rs feedback capacitance V GS = 0; VDS = 12.5 V; f = 1 MHz− 3 − pF Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values. VDS = 10 V. handbook, halfpage T.C. (mV/K) 10 10 2 103 104 MRA254 ID (mA) Fig.5 Drain current as a function of gate-source voltage, typical values. VDS = 10 V; Tj= 25°C. handbook, halfpage 4 8 12 16 20 MRA249 ID (A) VGS (V)

Philips Semiconductors Product specification UHF power MOS transistor BLF522 Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values. ID = 0.7 A; VGS = 15 V; handbook, halfpage 0 50 100 Tj ( oC) 150 MRA253 R DSon (Ω ) Fig.7 Input and output capacitance as functions of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 0 4 8 12 16 C (pF) MRA246 VDS (V) C is C os Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 048 1 2 1 6 MRA256 VDS (V) C rs (pF)

Philips Semiconductors Product specification UHF power MOS transistor BLF522 APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25°C; Rth mb-h= 0.4 K/W, unless otherwise specified. RF performance in a common source class-B circuit. MODE OF OPERATION f (MHz) VDS (V) IDQ (mA) PL (W) G p (dB) ηD (%) CW, class-B 500 12.5 50 5 > 10 typ. 11 > 50 typ. 55 Ruggedness in class-B operation The BLF522 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions: V DS = 15.5 V; f = 500 MHz at rated output power. Fig.9 Power gain and efficiency as functions of load power, typical values. Class-B operation; VDS = 12.5 V; IDQ = 50 mA; f = 500 MHz. handbook, halfpage 100 34567 η η (%) MRA247 G P G P (dB) PL (W) Fig.10 Load power as a function of input power, typical values. Class-B operation; VDS = 12.5 V; IDQ = 50 mA; f = 500 MHz. handbook, halfpage 0.4 0.8 1.2 1.6 MRA252 PL (W) PIN (W)

Philips Semiconductors Product specification UHF power MOS transistor BLF522 Fig.11 Test circuit for class-B operation. f = 500 MHz. handbook, full pagewidth 50 Ω input 50 Ω output C10 C11 C12 C13 C14 C15 C16 C17 C18 C19 C20 L1 L2 L3 L4 L8 L9 L10 R3 R4 +VDS DUT MGA070

Philips Semiconductors Product specification UHF power MOS transistor BLF522 List of components (class-B test circuit) Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε r = 2.2); thickness 0.79 mm. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C8, C20 multilayer ceramic chip capacitor (note 1) 430 pF, 50 V C2 multilayer ceramic chip capacitor (note 2) 3.9 pF, 50 V C3, C5, C18, C19 film dielectric trimmer 2 to 18 pF 2222 809 09003 C4 multilayer ceramic chip capacitor (note 2) 20 pF, 50 V C6, C7, C15, C16, C17 multilayer ceramic chip capacitor (note 2) 10 pF, 50 V C9, C10, C11, C13 multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104 C12 multilayer ceramic chip capacitor (note 1) 390 pF, 50 V C14 electrolytic capacitor 10 µF, 63 V 2222 030 38109 L1 stripline (note 3) 50 Ω 36.6× 2.5 mm L2 stripline (note 3) 50 Ω 16.7× 2.5 mm L3 stripline (note 3) 50 Ω 7.7× 2.5 mm L4, L5 stripline (note 3) 42 Ω 3 × 3 mm L6 4 turns enamelled 0.8 mm copper wire 24.9 nH length 6.9 mm int. dia. 2.5 mm leads 2× 5 mm L7 grade 3B Ferroxcube RF choke 4312 020 36642 L8 stripline (note 3) 50 Ω 10 × 2.5 mm L9 stripline (note 3) 50 Ω 16.5× 2.5 mm L10 stripline (note 3) 50 Ω 34.5× 2.5 mm R1 0.4 W metal film resistor 10 k Ω 2322 151 51003 R2 0.4 W metal film resistor 1 k Ω 2322 151 51002 R3 10 turns cermet potentiometer 50 k Ω R4 0.4 W metal film resistor 47 k Ω 2322 151 54703 R5 1 W metal film resistor 10 Ω 2322 153 51009

Philips Semiconductors Product specification UHF power MOS transistor BLF522 Fig.12 Component layout for 500 MHz class-B test circuit. The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. handbook, full pagewidth strap strap strap strap rivets (12x) strap strap strap strap 150 mm 70 mm MBC217 andbook, full pagewidth R3 +VDS C11 C10 R1C4 L3 L4L2L1 C5C3 C1 C2 C14 C12 C15 C16 L5 L8 L9 C18 C19 C20 C13 L10 MBC218

Philips Semiconductors Product specification UHF power MOS transistor BLF522 Fig.13 Input impedance as a function of frequency (series components), typical values. Class-B operation; VDS = 12.5 V; IDQ = 50 mA; PL = 5 W. handbook, halfpage −20 −40 −60 −80 100 200 300 400 500 f (MHz) MRA250 ri Zi (Ω ) xi Fig.14 Load impedance as a function of frequency (series components), typical values. Class-B operation; VDS = 12.5 V; IDQ = 50 mA; PL = 5 W. handbook, halfpage 100 200 300 400 500 f (MHz) MRA251 ZL (Ω ) R L XL Fig.15 Definition of MOS impedance. handbook, halfpage MBA379Zi ZL Fig.16 Power gain as a function of frequency, typical values. Class-B operation; VDS = 12.5 V; IDQ = 50 mA; PL = 5 W. handbook, halfpage 100 200 300 400 500 f (MHz) MRA248 G P (dB)

Philips Semiconductors Product specification UHF power MOS transistor BLF522 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT171A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 6 leads SOT171A U 2 EE1H Q D D 1 A F c A b Mw 3 H 1 M Cw 2 e U 1 q p C w 1 ABM B UNIT A mm Db 2.15 1.85 3.20 2.89 0.16 0.07 9.25 9.04 D 1 9.30 8.99 E 5.95 5.74 3.58 11.31 10.54 6.00 5.70 6.81 6.07 c E1 U 2 0.260.51 1.02 w 3 18.42 qw 2w 1F 3.05 2.54 U 1 24.90 24.63 H 1 9.27 9.01 p 3.43 3.17 Q 4.32 4.11 e 6.00 5.70 inches 0.085 0.073 0.126 0.114 0.006 0.003 0.364 0.356 0.366 0.354 0.234 0.226 0.140 0.445 0.415 0.236 0.224 0.268 0.100 0.980 0.970 0.365 0.355 0.135 0.125 0.170 0.162 0.236 0.224 H DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification UHF power MOS transistor BLF522 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.