BLF3G21-30

BLF3G21-30 NXP | Alldatasheet

Document overview

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Technical content

1.1 General description

30 W LDMOS power transistor for base station applications at frequencies from

1.2 Features

Table 1. Typical class-AB RF performance IDq = 450 mA; Th = 25°C in a common source test circuit. Table 2. Typical class-A RF performance IDq = 1 A; Th = 25°C in a modified PHS test fixture. during transport and handling.

BLF3G21-30_1 © NXP B.V. 2007. All rights reserved.

1.3 Applications

Table 3. Pinning Table 4. Ordering information Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).

BLF3G21-30_1 © NXP B.V. 2007. All rights reserved. Table 6. Thermal characteristics Table 7. Characteristics Tj = 25°C unless otherwise specified. Table 8. Application information VDS = 26 V; Th = 25°C unless otherwise specified.

BLF3G21-30_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 14 February 2007 4 of 12 NXP Semiconductors BLF3G21-30 UHF power LDMOS transistor

7.1 Ruggedness in class-AB operation

The BLF3G21-30 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS =2 6V ; f = 2200 MHz at rated load power. VDS = 26 V; IDq = 450 mA; Th = 25°C; f = 2000 MHz V DS = 26 V; IDq = 450 mA; Th = 25°C; f = 2000 MHz Fig 1. Power gain as function of CW load power; typical values Fig 2. Drain efficiency as function of CW load power; typical values VDS = 26 V; IDq = 450 mA; Th ≤ 25°C; f1 = 2000 MHz; f2 = 2000.1 MHz VDS = 26 V; IDq = 450 mA; Th ≤ 25°C; f1 = 2000 MHz; f2 = 2000.1 MHz Fig 3. Two-tone power gain and drain efficiency as functions of peak envelope load power; typical values Fig 4. Two-tone intermodulation distortion as function of peak envelope load power; typical values PL (W) 10−1 102101 001aaf790 G p (dB) PL (W) 10−1 102101 001aaf791 ηd (%) PL(PEP) (W) 10−1 102101 001aaf792 G p (dB) ηd (%) G p ηD 001aaf793 −40 −60 −20 IMD (dBc) −80 PL(PEP) (W) 10−1 102101 IMD3 IMD5 IMD7

BLF3G21-30_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 14 February 2007 5 of 12 NXP Semiconductors BLF3G21-30 UHF power LDMOS transistor (1) 192 kHz channel bandwidth (2) −ACPR 300 at 192 kHz bandwidth (3) +ACPR 300 at 192 kHz bandwidth (4) −ACPR 600 at 192 kHz bandwidth (5) +ACPR 600 at 192 kHz bandwidth (6) −ACPR 900 at 192 kHz bandwidth (7) +ACPR 900 at 192 kHz bandwidth VDS = 26 V; IDq = 1000 mA; Th ≤ 25°C; fc = 1900 MHz; PL(AV) = 9 W Fig 5. ACPR performance under PHS conditions, measured in application board Fig 6. Ciss, Crss and Coss as functions of drain supply voltage; typical values VDS = 26 V; IDq = 450 mA; PL = 45 W; Th ≤ 25°CV DS = 26 V; IDq = 450 mA; PL = 45 W; Th ≤ 25°C Fig 7. Input impedance as function of frequency (series components); typical values Fig 8. Load impedance as function of frequency (series components); typical values Δf (MHz) −1.0 1.0 0.5−0.5 0 001aaf794 −90 −50 −10 ACPR (dB) −130 (1) (2) (6) (7) (5)(4) (3) 001aaf795 102 C (pF) 10−1 VDS (V) 05 0 4020 3010 C oss C iss C rss f (GHz) 001aaf796 Zi (W ) Xi R i f (GHz) 001aaf797 Z L (W ) R L XL

xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x BLF3G21-30_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 14 February 2007 6 of 12 NXP Semiconductors BLF3G21-30 UHF power LDMOS transistor 8. Test information Fig 9. Class-AB test circuit for 2 GHz 001aaf798 C2 C4 C7 C8 L16L15 L14 L13L11 L10 L12 L1 L2 L3 L5 L6 C10 C11 C12 C14 C15 C16C13 Vdd Vgate 50 W output 50 W input

BLF3G21-30_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 14 February 2007 7 of 12 NXP Semiconductors BLF3G21-30 UHF power LDMOS transistor The components are situated on one side of the copper-clad Printed-Circuit Board (PCB) with Teflon dielectric (εr = 6.15); thickness = 0.64 mm. The other side is unetched and serves as a ground plane. See Table9 for a list of components. Fig 10. Component layout for 2 GHz class-AB test circuit C1 C2 PH98072 IN PH98073 OUT PH98072 IN PH98073 OUT 50 mm C10 001aaf799 C15 C16 C14 C13 C11 C12 C7 C8 50 Ω input 50 Ω output 50 mm mm

BLF3G21-30_1 © NXP B.V. 2007. All rights reserved. Table 9. List of components (seeFigure9 andFigure10) Component Description Value Dimensions Catalogue No.

BLF3G21-30_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 14 February 2007 9 of 12 NXP Semiconductors BLF3G21-30 UHF power LDMOS transistor 9. Package outline Fig 11. Package outline SOT467C REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT467C 99-12-06 99-12-28 0 5 10 mm scale Flanged LDMOST ceramic package; 2 mounting holes; 2 leads 0.15 0.10 5.59 5.33 9.25 9.04 1.65 1.40 18.54 17.02 DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) 3.43 3.18 4.67 3.94 2.21 1.96 D D 1 U 1 A U 2 E p b H Q F c UNIT QcD 9.27 9.02 D 1 5.92 5.77 E 5.97 5.72 E1 FH p q mm 0.184 0.155inch b 14.27 20.45 20.19 U 2U 1 5.97 5.72 0.25 w 1 0.51 0.006 0.004 0.220 0.210 0.364 0.356 0.065 0.055 0.73 0.67 0.135 0.125 0.087 0.077 0.365 0.355 0.233 0.227 0.235 0.225 0.562 0.805 0.795 0.235 0.225 0.010 0.020 w 2A M MC C A w 1 w 2 ABM M M q B SOT467C

BLF3G21-30_1 © NXP B.V. 2007. All rights reserved. Table 10. Abbreviations Table 11. Revision history

BLF3G21-30_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 14 February 2007 11 of 12 NXP Semiconductors BLF3G21-30 UHF power LDMOS transistor 12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

12.2 Definitions

Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet —A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes —NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use —NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications —Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values —Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale —NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license —Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit:http://www.nxp.com For sales office addresses, send an email to:salesaddresses@nxp.com Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

NXP Semiconductors BLF3G21-30 UHF power LDMOS transistor © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 14 February 2007 Document identifier: BLF3G21-30_1 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 14. Contents