BLF369

BLF369 PHILIPS | Alldatasheet

Document overview

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• PDF pages: 13

Technical content

1.1 General description

applications in the HF/VHF band. [1] Th is the heatsink temperature.

1.2 Features

1.3 Applications

Table 1. Typical performance during transport and handling.

BLF369_2 © NXP B.V. 2006. All rights reserved. [1] Tj is the junction temperature. [2] R th(j-case)and Rth(j-h) are measured under RF conditions. [3] R th(j-h) is dependent on the applied thermal compound and clamping/mounting of the device. Table 2. Pinning Table 3. Ordering information Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Table 5. Thermal characteristics

BLF369_2 © NXP B.V. 2006. All rights reserved. [1] ID is the drain current. [2] C iss and Coss include reverse transfer capacitance (Crss). Table 6. Characteristics Tj=2 5°C unless otherwise specified. Table 7. RF performance in a common-source 225 MHz test circuit Th =2 5°C unless otherwise specified.

BLF369_2 © NXP B.V. 2006. All rights reserved. Objective data sheet Rev. 02 — 8 December 2006 4 of 13 NXP Semiconductors BLF369 VHF power LDMOS transistor

7.1 Ruggedness in class-AB operation

The BLF369 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; f = 225 MHz at rated load power (PL(PEP) = 500 W). VDS = 32 V; f = 225 MHz; IDq = 2× 1.0 A; Th = 25°C. Fig 2. CW power gain Gp and drain efficiencyηD as a function of output power PL; typical values VDS = 32 V; f1 = 225 MHz; f2 = 225.1 MHz; IDq =2 × 1.0 A; Th = 25°C. VDS = 32 V; f1 = 225 MHz; f2 = 225.1 MHz; IDq =2 × 1.0 A; Th = 25°C. Fig 3. 2-Tone power gain Gp and drain efficiencyηD as a function of peak envelope power PL(PEP); typical values Fig 4. 2-Tone third order intermodulation distortion IMD3 as a function of peak envelope power P L(PEP); typical values PL (W) 0 500 400200 300100 001aae501 G P (dB) h D (%) G P hD PL(PEP) (W) 0 600 400200 001aae502 G P (dB) h D (%) G P hD PL(PEP) (W) 0 600 400200 001aae503 -40 -20 IMD3 (dBc) -60

BLF369_2 © NXP B.V. 2006. All rights reserved.

7.2 Reliability

TTF; 0.1 % failure fraction; best estimate values. Table 8. List of components For test circuit, seeFigure6,7 and8.

BLF369_2 © NXP B.V. 2006. All rights reserved. [1] American technical ceramics type 100B or capacitor of same quality. [2] PCB: Rogers 5880;εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35µm. Table 8. List of components …continued For test circuit, seeFigure6,7 and8.

xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx BLF369_2 © NXP B.V. 2006. All rights reserved. Objective data sheet Rev. 02 — 8 December 2006 7 of 13 NXP Semiconductors BLF369 VHF power LDMOS transistor Fig 6. Class-AB common-source 225 MHz test circuit; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages 001aae535

50 W50 W

+ VD2(test)+ VG2(test) L4R9R8 R10 C27 C26 C25 + VG1(test) R6R5 C24 C22 C23 + VD1(test) L1L5 L6 L3 C20C21 C12 C10 C11 R2R1 C15 C13 C14 R4R3 C31 B2 B1 C28 C29R11 R12 C30 C33

xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx BLF369_2 © NXP B.V. 2006. All rights reserved. Objective data sheet Rev. 02 — 8 December 2006 8 of 13 NXP Semiconductors BLF369 VHF power LDMOS transistor Fig 7. Printed-Circuit Board (PCB) for class-AB 225 MHz test circuit 001aae536 95 mm 80 mm 95 mm

xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx BLF369_2 © NXP B.V. 2006. All rights reserved. Objective data sheet Rev. 02 — 8 December 2006 9 of 13 NXP Semiconductors BLF369 VHF power LDMOS transistor C1 mounted on top of transformers T1 and T2; C20 mounted on top of transformers T3 and T4 Fig 8. Component layout for class-AB 225 MHz test circuit 001aae537 C24 C30 C29 C32C31 C28 R11 R12 C33 + VD1(test) + VG1(test) + VG2(test) + VD2(test) C20 C21 R8 R9 C25 C26 R10C27 C23 C22 C4 C5 L2 R1 C12 C10 C11 C2 C3C14 C15 C8C7 C13 R3 R4 R6R5 BLF 369 + +

BLF369_2 © NXP B.V. 2006. All rights reserved. Objective data sheet Rev. 02 — 8 December 2006 10 of 13 NXP Semiconductors BLF369 VHF power LDMOS transistor 9. Package outline Fig 9. Package outline SOT800-2 SOT800-2 REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOT800-2 05-06-02 05-06-07 Flanged LDMOST ceramic package; 2 mounting holes; 4 leads 0 5 10 mm scale 10.45 0.15 0.10 30.5 29.9 15.3 15.1 22.8 21.8 15.4 15.0 6.3 5.9 2.26 2.00 44.5 44.2 3.56 3.49 3.1 2.8 14.6 14.4 31.1 30.9 3.7 3.3 inches 0.0020.01 0.011.516 UNIT A D bc e U 2 yq w 2w 1F U 1pQE E1D 1 HL DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) y D F A D 1 Q c E 0.50.415 0.411 0.006 0.004 1.201 1.177 1.224 1.216 0.602 0.594 0.898 0.858 0.606 0.591 0.248 0.232 0.089 0.079 1.752 1.740 0.140 0.137 0.122 0.110 0.575 0.567 0.146 0.130 B b q e H L U 2 P w1 AM M B M w2 CM M U 1 C A

BLF369_2 © NXP B.V. 2006. All rights reserved. Table 9. Abbreviations Table 10. Revision history

BLF369_2 © NXP B.V. 2006. All rights reserved. Objective data sheet Rev. 02 — 8 December 2006 12 of 13 NXP Semiconductors BLF369 VHF power LDMOS transistor 12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

12.2 Definitions

Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet —A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes —NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use —NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications —Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values —Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale —NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license —Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit:http://www.nxp.com For sales office addresses, send an email to:salesaddresses@nxp.com Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

VHF power LDMOS transistor © NXP B.V. 2006. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 8 December 2006 Document identifier: BLF369_2 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 14. Contents