BLF348

BLF348 PHILIPS | Alldatasheet

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Technical content

Product specification October 1992 DISCRETE SEMICONDUCTORS BLF348 VHF linear push-pull power MOS transistor

Philips Semiconductors Product specification VHF linear push-pull power MOS transistor BLF348

FEATURES

• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures excellent reliability.

DESCRIPTION

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors. PINNING − SOT262A1 PIN DESCRIPTION 1 drain 1 2 drain 2 3 gate 1 4 gate 2 5 source PIN CONFIGURATION CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environment safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Fig.1 Simplified outline and symbol. k, halfpage MSB008Top view MBB157 s QUICK REFERENCE DATA RF performance in a push-pull common source test circuit. Note 1. Three-tone test method (vision carrier−8 dB, sound carrier−7 dB, sideband signal−16 dB), zero dB corresponds to peak synchronization level. MODE OF OPERATION fvision (MHz) VDS (V) ID (A) Th (°C) dim (dB) (note1) Po sync (W) G p (dB) class-A 224.25 28 2 × 4.6 70 −52 > 67 > 11 224.25 28 2 × 4.6 25 −52 typ. 75 typ. 13

Philips Semiconductors Product specification VHF linear push-pull power MOS transistor BLF348 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwise specified. THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS drain-source voltage − 65 V ±VGSS gate-source voltage − 20 V ID DC drain current − 25 A Ptot total power dissipation up to T mb = 25°C; total device; both sections equally loaded − 500 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-mb thermal resistance from junction to mounting base total device; both sections equally loaded

0.35 K/W

R th mb-h thermal resistance from mounting base to heatsink total device; both sections equally loaded

0.15 K/W

Fig.2 DC SOAR. (1) Current is this area may be limited by RDS(on). (2) Tmb =2 5°C. Total device; both sections equally loaded. handbook, halfpage 102 11 0 VDS (V) ID (A) 102 (1) MRA933 (2) Fig.3 Power/temperature derating curves. (1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded. handbook, halfpage 0 40 80 160 500 400 MGE616 120 300 200 100 Ptot (W) Th (°C) (2) (1)

Philips Semiconductors Product specification VHF linear push-pull power MOS transistor BLF348 CHARACTERISTICS (per section) Tj = 25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 0.1 A 65 −− V IDSS drain-source leakage current VGS = 0; VDS = 28 V −− 5m A IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 −− 1 µA VGS(th) gate-source threshold voltage ID = 0.1 A; VDS = 10 V 2 − 4.5 V ΔVGS(th) gate-source voltage difference of both transistor sections ID = 0.1 A; VDS = 10 V −− 100 mV gfs forward transconductance I D = 8 A; VDS = 10 V 5 7.5 − S gfs1/gfs2 forward transconductance ratio of both transistor sections ID = 8 A; VDS = 10 V 0.9 − 1.1 R DS(on) drain-source on-state resistance ID = 8 A; VGS = 10 V − 0.1 0.15 Ω IDSX on-state drain current V GS = 10 V; VDS = 10 V − 37 − A C is input capacitance V GS = 0; VDS = 28 V; f = 1 MHz− 495 − pF C os output capacitance V GS = 0; VDS = 28 V; f = 1 MHz− 340 − pF C rs feedback capacitance V GS = 0; VDS = 28 V; f = 1 MHz− 40 − pF Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values per section. VDS = 10 V. handbook, halfpage0 MGP229 10−1 11 0 ID (A) T.C. (mV/K) Fig.5 Drain current as a function of gate-source voltage, typical values per section. VDS = 10 V; Tj=2 5°C. handbook, halfpage 0 5 10 20 MGP230 ID (A) VGS (V)

Philips Semiconductors Product specification VHF linear push-pull power MOS transistor BLF348 Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values per section. ID = 8 A; VGS = 10 V. handbook, halfpage 0 50 100 150 200 150 100 MGP231 Tj (°C) R DSon (mΩ ) Fig.7 Input and output capacitance as functions of drain-source voltage, typical values per section. VGS = 0; f = 1 MHz. handbook, halfpage 01 0 2 0 4 0 1500 500 1000 MGP234 C (pF) VDS (V) C is C os Fig.8 Feedback capacitance as a function of drain-source voltage, typical values per section. VGS = 0; f = 1 MHz. handbook, halfpage 01 0 2 0 4 0 600 200 400 MGP232 C rs (pF) VDS (V) Fig.9 Intermodulation distortion as a function of peak synchronized output power. handbook, halfpage 503010 70 −50 −55 −65 −70 −60 MGP233 dim (dB) Po sync (W) Th = 70 °C 25 °C

Philips Semiconductors Product specification VHF linear push-pull power MOS transistor BLF348 APPLICATION INFORMATION FOR CLASS-A OPERATION Th = 70°C; Rth mb-h = 0.15 K/W unless otherwise specified. RF performance in a linear amplifier (common source circuit class-A circuit). R GS = 82Ω per section; optimum load impedance per section = 0.14 + j0.14Ω . Note 1. Three-tone test method (vision carrier−8 dB, sound carrier−7 dB, sideband signal−16 dB), zero dB corresponds to peak synchronization level. Ruggedness in class-A operation The BLF348 is capable of withstanding a load mismatch corresponding to VSWR = 20 through all phases under the following conditions: VDS = 28 V; f = 224.25 MHz at rated output power. MODE OF OPERATION fvision (MHz) VDS (V) ID (A) Th (°C) dim (dB) (note1) Po sync (W) G p (dB) class-A 224.25 28 2 × 4.6 70 −52 > 67 typ. 70 > 11 typ. 12.5 224.25 28 2 × 4.6 25 −52 typ. 75 typ. 13 224.25 28 2 × 4.6 70 −55 > 54 typ. 57 > 11 typ.12.5 224.25 28 2 × 4.6 25 −55 typ. 62 typ. 13

Philips Semiconductors Product specification VHF linear push-pull power MOS transistor BLF348 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... dbook, full pagewidth C24 C26 C27 C17 BFL348 C18 C31 +5 V R7 L22 L24 L23 L20L18 L10 L8L6L4 50 Ω input D.U.T. C12 C13 C16 C15 C14 C23 C20 L11 L14 L16 L21L19L15 L17L9 L12 L13 C28 C21 C22 +VDD1 C11 C10 50 Ω output MGP235 C3C1 C19C9 C5 C32 C33 C36C35 C34 C29 C30 C25 +VDD2 +5 V Fig.10 Test circuit for class-A operation. f = 225 MHz.

Philips Semiconductors Product specification VHF linear push-pull power MOS transistor BLF348 List of components (class-A test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1 film dielectric trimmer 2 to 9 pF 2222 809 09006 C2, C3 multilayer ceramic chip capacitor (note 1) 2 × 10 pF in parallel+ 22 pF C4, C30 film dielectric trimmer 5 to 60 pF 2222 809 08003 C5 multilayer ceramic chip capacitor (note 1) 82 pF, 500 V C6, C9, C10, C13, C14, C19 multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104 C11, C12, C20, C27 multilayer ceramic chip capacitor (note 1) 1 nF, 500 V C7, C8, C16, C17 MKT film capacitor 1 µF 2222 371 11105 C21, C26 electrolytic capacitor 10 µF, 63 V C22, C25 electrolytic capacitor 220 µF, 63 V C15, C18, C23, C24 multilayer ceramic chip capacitor (note 1) 510 pF, 500 V C28, C31 multilayer ceramic chip capacitor (note 1) 2 × 8.2 pF in parallel, 500 V C29 multilayer ceramic chip capacitor (note 1) 3 × 39 pF in parallel, 500 V C32 multilayer ceramic chip capacitor (note 1) 33 pF, 500 V C33 multilayer ceramic chip capacitor (note 1) 18 pF, 500 V C34, C35 multilayer ceramic chip capacitor (note 1) 10 pF+ 18 pF+ 62 pF (3 in parallel), 500 V C36 film dielectric trimmer 2 to 18 pF 2222 809 09003 L1, L3, L22, L24 stripline (note 2) 50 Ω 4.8× 80 mm L2, L23 semi-rigid cable (note 3) 50 Ω ext. conductor length 80 mm ext. dia 3.6 mm L4, L5 stripline (note 2) 43 Ω 6 × 32 mm L6, L7 stripline (note 2) 43 Ω 6 × 7 mm L8, L9 stripline (note 2) 43 Ω 6 × 7 mm L10, L13 grade 3B Ferroxcube wideband HF choke 2 in parallel 4312 020 36642 L11, L12 3/4 turn enamelled 2 mm copper wire 40 nH space 1 mm int. dia. 10 mm leads 2× 7 mm L14, L15 stripline (notes 2 and 4) 43 Ω 6 × 6 mm L16, L17 stripline (notes 2 and 4) 43 Ω 6 × 9.5 mm L18, L19 stripline (notes 2 and 4) 43 Ω 6 × 27.5 mm L20, L21 stripline (notes 2 and 4) 43 Ω 6 × 13 mm

Philips Semiconductors Product specification VHF linear push-pull power MOS transistor BLF348 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines L1, L3 - L9, L14 - L22 and L24 are on a double copper-clad printed circuit board with glass microfibre PTFE dielectric (ε r = 2.2); thickness1⁄16 inch; thickness of copper sheet 2 x 35µm. 3. Semi-rigid cables L2 and L23 are soldered on to striplines L1 and L24. 4. A copper strap, thickness 0.8 mm, is soldered on to striplines L14 - L21. R1, R6 10 turns Bourns potentiometer 50 k Ω R2, R5 0.4 W metal film resistor 1 k Ω R3, R4 0.4 W metal film resistor 82 Ω R7, R8 1 W, ±5% metal film resistor 10 Ω COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

Philips Semiconductors Product specification VHF linear push-pull power MOS transistor BLF348 Fig.11 Input impedance as a function of frequency (series components), typical values. Class-A operation; VDS = 28 V; IDQ = 2× 4.6 A; R GS = 82Ω (per section); Th = 70°C. handbook, halfpage 160 180 200 240 MGP236 220 Zi (Ω ) f (MHz) ri xi Fig.12 Load impedance as a function of frequency (series components), typical values. Class-A operation; VDS = 28 V; IDQ = 2× 4.6 A; R GS = 82Ω (per section); Th = 70°C. handbook, halfpage 160 180 200 240 0.8 0.6 0.2 0.4 MGP237 220 ZL (Ω ) f (MHz) R L XL Fig.13 Power gain as a function of frequency, typical values. Class-A operation; VDS = 28 V; IDQ = 2× 4.6 A; R GS = 82Ω (per section); Th = 70°C. handbook, halfpage 160 180 200 240 MGP238 220 f (MHz) G p (dB)

Philips Semiconductors Product specification VHF linear push-pull power MOS transistor BLF348 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT262A1 97-06-28 0 5 10 mm scale Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262A1 p A F b e D q U 1 H 1 U 2H Q c EE1 C A w 1 ABM B Mw 3 Mw 2 C UNIT A mm Db 5.85 5.58 0.16 0.10 21.98 21.71 11.05 10.29 10.03 20.58 20.06 9.91 9.65 5.77 5.00 c e U 2 0.250.51 1.02 w 3 27.94 qw 2w 1F 1.78 1.52 U 1 34.17 33.90 H 1 17.02 16.51 p 3.28 3.02 Q 2.85 2.59 EE 1 10.27 10.05 inches 0.230 0.220 0.006 0.004 0.865 0.855 0.435 0.405 0.395 0.81 0.79 0.390 0.380 0.227 0.060 1.345 1.335 0.67 0.65 0.129 0.119 0.112 0.102 0.404 0.396 H DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification VHF linear push-pull power MOS transistor BLF348 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.