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Product speciﬁcation August 1994 DISCRETE SEMICONDUCTORS Philips Semiconductors BLF247B VHF push-pull power MOS transistor

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF247B

FEATURES

High power gain
Easy power control
Good thermal stability
Withstands full load mismatch.

APPLICATIONS

Large signal applications in the VHF frequency range.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in a 4-lead, SOT262A1 balanced flange type package with two ceramic caps. The mounting flange provides the common source connection for the transistor. PINNING - SOT262A1 PIN DESCRIPTION 1 drain 1 2 drain 2 3 gate 1 4 gate 2 5 source PIN CONFIGURATION CAUTION WARNING The device is supplied in a antistatic package. The gate-source input must be protected against static charge during transport or handling. Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Fig.1 Simplified outline and symbol. MAM098Top view d g s d g QUICK REFERENCE DATA RF performance at Th = 25°C in a common source test circuit. MODE OF OPERATION f (MHz) VDS (V) PL (W) G p (dB) ηD (%) CW, class-B 225 28 150 ≥12 ≥55

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF247B LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor section VDS drain-source voltage (DC) − 65 V VGS gate-source voltage −± 20 V ID drain current (DC) − 13 A Ptot total power dissipation up to T mb = 25°C; total device; both sections equally loaded − 280 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − +200 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-mb thermal resistance from junction to mounting base total device; both sections equally loaded

0.63 K/W

R th mb-h thermal resistance from mounting base to heatsink total device; both sections equally loaded

0.15 K/W

Fig.2 DC SOAR. Total device; both sections equally loaded. (1) Current in this area may be limited by RDSon . (2) Tmb =2 5°C. 102 MBD287 101 10 2 ID (A) V (V)DS (1) (2) Fig.3 Power derating curves. Total device; both sections equally loaded. (1) Continuous operation. (2) Short-time operation during mismatch. 04 0 400 300 100 200 MBD288 80 120 160 T ( C)h Ptot (W) o (2) (1)

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF247B CHARACTERISTICS Tj=2 5°C unless otherwise speciﬁed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor section V(BR)DSS drain-source breakdown voltage ID = 50 mA; VGS =0 6 5 −− V IDSS drain-source leakage current VGS = 0; VDS =2 8V −− 2.5 mA IGSS gate-source leakage current VGS = ±20 V; VDS =0 −− 1 µA VGSth gate-source threshold voltage ID = 50 mA; VDS =1 0V 2 − 4.5 V gfs forward transconductance I D = 5 A; VGS =1 0V 3 4 . 2 − S R DSon drain-source on-state resistance ID = 5 A; VGS =1 0V − 0.2 0.3 Ω IDSX drain cut-off current V GS = 10 V; VDS =1 0V − 22 − A C is input capacitance V GS = 0; VDS =2 8V ; f=1M H z − 225 − pF C os output capacitance V GS = 0; VDS =2 8V ; f=1M H z − 180 − pF C rs reverse transfer capacitance VGS = 0; VDS =2 8V ; f=1M H z − 25 − pF Fig.4 Temperature coefﬁcient of gate-source voltage as a function of drain current, typical values per section. VDS =1 0V . handbook, halfpage1 10 2 MBD298 10 1 11 0 TC (mV/K) I (A)D Fig.5 Drain current as a function of gate-source voltage, typical values per section. VDS =1 0V . 0 5 10 20

15 V (V)GS

(A) DI MBD299

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF247B Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values per section. ID = 5 A; VGS =1 0V . handbook, halfpage 05 0 100 200 MBD297 150 T ( C)o j R DSon (Ω ) 300 400 100 Fig.7 Input and output capacitance as functions of drain-source voltage, typical values per section. VGS = 0; f = 1 MHz. 200 400 600 800 01 0 2 0 3 0 4 0 C (pF) C is C os (V)VDS MRA930 Fig.8 Reverse transfer capacitance as a function of drain-source voltage, typical values per section. VGS = 0; f = 1 MHz. MBD296 300 200 100 10 20 30 40 V (V)DS C rs (pF)

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF247B

APPLICATION INFORMATION

RF performance in a push-pull, common source, class-B test circuit: Th = 25°C; Rth mb-h = 0.15 K/W. Ruggedness in class-B operation The BLF247B is capable of withstanding a full load mismatch corresponding to VSWR = 50 through all phases under the following conditions: VDS = 28 V; f = 175 MHz; Th =2 5°C; PL = 150 W; Rth mb-h= 0.15 K/W. MODE OF OPERATION f (MHz) VDS (V) IDQ (mA) PL (W) G p (dB) ηD (%) CW, class-B 225 28 2 × 100 150 ≥12 typ. 13.5 ≥55 typ. 70 Fig.9 Power gain and efficiency as functions of load power; typical values. Class-B operation. VDS =2 8V . IDQ =2 × 100 mA. ZL = 1.3 + j0.6Ω per section. f = 225 MHz. handbook, halfpage 0 50 100 150 200 250 100 P (W)L η (%) η MBD289 G p G p (dB) Class-B operation. VDS =2 8V . IDQ =2 × 100 mA. ZL = 1.3 + j0.6Ω per section. f = 225 MHz. Fig.10 Load power as a function of input power; typical values. handbook, halfpage 300 200 100 10 20 30 MBD290 P L (W) P (W)i

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF247B handbook, full pagewidth C19 C20 50 Ω output L26 L24 L25 50 Ω input L1 C1 C2 L11 L10 L12 C15 C18C16 C17 L20 L13 L21 MBD294 DUT L22 L23 C11 L16 L17 C24 C26 L15 C23 C10 C14 L18 L19L9 A C27C29 C28 A IC1 C30 DD1V DD2V C13 C25 C22 C21 C12 R8 L14 DD1V Fig.11 Test circuit for Class-B operation at 225 MHz.

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF247B List of components (see Figs 11 and 12) COMPONENT DESCRIPTION VALUE DIMENSION CATALOGUE NO. C1, C2 multilayer ceramic chip capacitor; note 1 200 pF C3 multilayer ceramic chip capacitor; note 1 27 pF C4, C6, C18 ﬁlm dielectric trimmer 2 to 9 pF 2222 809 09005 C5 multilayer ceramic chip capacitor; note 1 39 pF C7 multilayer ceramic chip capacitor; note 1 91 pF C8, C11, C12, C13, C27 multilayer ceramic chip capacitor 100 nF; 50 V 2222 852 47104 C9, C10 multilayer ceramic chip capacitor; note 1 2 × 1 nF in parallel C14 multilayer ceramic chip capacitor; note 1 2 × 36 pF in parallel C15 multilayer ceramic chip capacitor; note 1 18 pF C16 ﬁlm dielectric trimmer 2 to 18 pF 2222 809 09006 C17 multilayer ceramic chip capacitor; note 1 6.8 pF C19, C20 multilayer ceramic chip capacitor; note 1 47 pF C21, C26, C29, C30 multilayer ceramic chip capacitor; note 1 1n F C22, C25, C28 electrolytic capacitor 10 µF; 63 V 2222 030 38109 C23, C24 multilayer ceramic chip capacitor; note 1 2 × 470 nF in parallel L1, L3, L24, L26 stripline; note 2 50 Ω length 80 mm width 4.8 mm L2, L25 semi-rigid cable; note 3 50 Ω ext. conductor: length 80 mm diameter 3.6 mm L4, L5 stripline; note 2 43 Ω length 30 mm width 6 mm L6, L7 stripline; note 2 43 Ω length 10 mm width 6 mm L8, L9 stripline; note 2 43 Ω length 2 mm width 6 mm L10, L11 stripline; note 2 43 Ω length 4 mm width 6 mm L12, L13 stripline; note 2 43 Ω length 10 mm width 6 mm L14, L17 Ferroxcube grade 3B wideband HF choke 2 in parallel 4312 02036642

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF247B Notes 1. American Technical Ceramics type 100B or capacitor of same quality. 2. The striplines are on a double copper-clad printed-circuit board with glass microfibre PTFE dielectric (ε r = 2.2); thickness1⁄16 inch; thickness of the copper sheet 2× 35 µm. 3. Semi-rigid cables L2 and L25 are soldered onto striplines L1 and L26. L15, L16 3 turns enamelled 1.6 mm copper wire 50 nH length 7.8 mm internal diameter 6 mm leads 2× 10 mm L18, L19 stripline; note 2 43 Ω length 6 mm width 6 mm L20, L21 stripline; note 2 43 Ω length 15 mm width 6 mm L22, L23 stripline; note 2 43 Ω length 26.5 mm width 6 mm R1, R6 10 turns potentiometer 50 k Ω R2, R3, R4, R5 metal ﬁlm resistor 1 k Ω ; 0.4 W R7 metal ﬁlm resistor 5.11 k Ω ; 1 W R8, R9 metal ﬁlm resistor 10 Ω ; 1 W IC1 voltage regulator 78L05 COMPONENT DESCRIPTION VALUE DIMENSION CATALOGUE NO. Fig.12 Component layout for 225 MHz class-B test circuit. Dimensions in mm. The circuit and components are situated on one side of the printed-circuit board, the other side being fully metallized to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. handbook, full pagewidth IC1R7 C30 VDD1 to R1, R6 C27 C29 C28 slider R1C9 C11 C10 L11 L10 slider R6 L12 L18 L20 L22 L13 L19 L21 L23 L16 L15 C24 L17 L17 C26 C25C13 VDD2 L25 L26 C19 C20 C17 C18 L24 C23 L14 L14 C21 C22C12 VDD1 BLF247B 130119 100 MBD295 C14 C15

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF247B Fig.13 Input impedance as a function of frequency (series components), typical values per section. VDS =2 8V . IDQ =2 × 100 mA. Th =2 5°C. PL = 150 W (total device). 0 100 200 300 MBD291 Z i f (MHz) r x i i (Ω ) Fig.14 Load impedance as a function of frequency (series components), typical values per section. VDS =2 8V . IDQ =2 × 100 mA. Th =2 5°C. PL = 150 W (total device). 0 100 200 300 MBD293 ZL f (MHz) R X L L (Ω ) Fig.15 Deﬁnition of MOS impedances. handbook, halfpage MBA379Zi ZL Fig.16 Power gain as a function of frequency, typical values per section. VDS =2 8V . IDQ =2 × 100 mA. Th =2 5°C. PL = 150 W (total device). handbook, halfpage 0 100 200 300 MBD292 G p f (MHz) (dB)

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF247B PACKAGE OUTLINE Fig.17 SOT262A1. Dimensions in mm. 3.3 3.0 9.8 15.6 max 5.525 11.05 27.94 34.3 max 2.54 10.4 max 0.25M 5.9 5.5 (4x) 21.85 seating plane 1.65 5.8 max2.92 2.29 1.02 0.13 11 max 11 max 0.25 MSA285 - 2

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF247B DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the speciﬁcation.

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF247B NOTES

Philips Semiconductors – a worldwide company Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428) BUENOS AIRES, Tel. (541)786 7633, Fax. (541)786 9367 Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. (02)805 4455, Fax. (02)805 4466 Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213, Tel. (01)60 101-1236, Fax. (01)60 101-1211 Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands, Tel. (31)40 783 749, Fax. (31)40 788 399 Brazil: Rua do Rocio 220 - 5th floor, Suite 51, CEP: 04552-903-SÃO PAULO-SP, Brazil. P.O. Box 7383 (01064-970). Tel. (011)821-2333, Fax. (011)829-1849 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS: Tel. (800) 234-7381, Fax. (708) 296-8556 Chile: Av. Santa Maria 0760, SANTIAGO, Tel. (02)773 816, Fax. (02)777 6730 Colombia: IPRELENSO LTDA, Carrera 21 No. 56-17, 77621 BOGOTA, Tel. (571)249 7624/(571)217 4609, Fax. (571)217 4549 Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. (032)88 2636, Fax. (031)57 1949 Finland: Sinikalliontie 3, FIN-02630 ESPOO, France: 4 Rue du Port-aux-Vins, BP317,

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Product Information

BLF247B specifications and overview.

Summary

VHF push-pull power MOS transistor August 1994

Description

VHF push-pull power MOS transistor August 1994

Source title BLF247B Datasheet(PDF) - NXP Semiconductors

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