BLF246B PHILIPS | Alldatasheet
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Technical content
Product specification Supersedes data of 1999 Jan 28
2000 Feb 04
ndbook, halfpage M3D075
2000 Feb 04 2
Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B
FEATURES
- High power gain
- Easy power control
- Good thermal stability
- Gold metallization ensures excellent reliability.
APPLICATIONS
Large signal applications in the VHF frequency range.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap. All leads are isolated from the flange. PINNING - SOT161A PIN DESCRIPTION 1 source 2 source 3 drain 1 4 gate 1 5 drain 2 6 gate 2 7 source 8 source PIN CONFIGURATION CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Fig.1 Simplified outline and symbol. andbook, halfpage MBC826 1357 2468 Top view MBB157 s QUICK REFERENCE DATA RF performance at Th =2 5°C in a push-pull common source test circuit. MODE OF OPERATION f (MHz) VDS (V) PL (W) G p (dB) ηD (%) CW, class-AB 175 28 60 >14 >55
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Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor section unless otherwise specified VDS drain-source voltage − 65 V VGS gate-source voltage −± 20 V ID drain current (DC) − 8A Ptot total power dissipation Tmb ≤ 25 °C total device; both sections equally loaded− 130 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-mb thermal resistance from junction to mounting base total device; both sections equally loaded
1.35 K/W
R th mb-h thermal resistance from mounting base to heatsink total device; both sections equally loaded
0.25 K/W
Fig.2 DC SOAR. (1) Current in this area may be limited by RDSon . (2) Tmb =2 5°C. Total device; both sections equally loaded. handbook, halfpage 10−1 11 0 ID (A) VDS (V) 102 (1) MRA932 (2) Fig.3 Power/temperature derating curves. (1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded. handbook, halfpage 0 40 80 160 160 120 MGR738 120 Th (°C) Ptot (W) (2) (1)
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Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B CHARACTERISTICS Tj=2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor section V(BR)DSS drain-source breakdown voltage VGS = 0; ID =1 0m A 6 5 −− V IDSS drain-source leakage current VGS = 0; VDS =2 8V −− 2m A IGSS gate-source leakage current V GS = ±20 V; VDS =0 −− 1 µA VGSth gate-source threshold voltage ID = 10 mA; VDS =1 0V 2 − 4.5 V gfs forward transconductance I D = 1.5 A; VDS = 10 V 1.2 1.8 − S R DSon drain-source on-state resistance ID = 1.5 A; VGS =1 0V − 0.4 0.75 Ω IDSX on-state drain current V GS = 10 V; VDS =1 0V − 10 − A C is input capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 125 − pF C os output capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 75 − pF C rs feedback capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 11 − pF Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values per section. VDS =1 0V . handbook, halfpage6 MGR739 10 10 2 103 104 T.C. (mV/K) ID (mA) Fig.5 Drain current as a function of gate-source voltage; typical values per section. VDS =1 0V . handbook, halfpage 02 0 MGR740
10 VGS (V)
(A) Tj = 25 °C 125 °C
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Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B Fig.6 Drain-source on-state resistance as a function of junction temperature; typical values per section. VGS = 10 V; ID = 1.5 A. handbook, halfpage 0 40 80 160 0.8 0.6 0.2 0.4 MGR741 120 Tj (°C) R DSon (Ω ) Fig.7 Input and output capacitance as functions of drain-source voltage; typical values per section. VGS = 0; f = 1 MHz. handbook, halfpage 01 0 2 0 4 0 240 MGR742 180 120 VDS (V) C (pF) C is C os Fig.8 Feedback capacitance as a function of drain-source voltage; typical values per section. VGS = 0; f = 1 MHz. handbook, halfpage 01 0 2 0 4 0 MGR743 VDS (V) C rs (pF)
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Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B
APPLICATION INFORMATION
RF performance in CW operation in a push-pull, common source, class-B circuit. Th =2 5°C; Rth mb-h= 0.25 K/W; unless otherwise specified. Ruggedness in class-B operation The BLF246B is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the following conditions: VDS = 28 V; f = 175 MHz at rated output power. MODE OF OPERATION f (MHz) VDS (V) IDQ (mA) PL (W) G p (dB) ηD (%) CW, class-B 175 28 2 × 50 60 >14 >55 typ. 19 typ. 65 Fig.9 Power gain and efficiency as a function of load power; typical values per section. Class-B operation; VDS = 28 V; IDQ =2 × 50 mA; ZL = 4.6+ j5Ω ; f = 175 MHz. handbook, halfpage 02 0 4 0 8 0 MGR744 100 G p η D G p (dB) PL (W) η D (%) Fig.10 Load power as a function of input power; typical values per section. Class-B operation; VDS = 28 V; IDQ =2 × 50 mA; ZL = 4.6+ j5Ω ; f = 175 MHz. handbook, halfpage 0 2.5 100 MGR745 0.5 1.0 1.5 2.0 PIN (W) PL (W)
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Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B Fig.11 Test circuit for class-B operation. f = 175 MHz. MGR749 handbook, full pagewidth C15 C14 L12 +VD +VG C13 C12 C11 C25 C26 C6C4 C5 C21 C22 C23 C24 L10 L11 L16 L17 L18 L19 L20 L21 L22 L23 L24 50 Ω output 50 Ω input C16 C17 L15 L14 L13 +VD +VG C18 C20 C19 C10
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Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B List of components class-B test circuit(see Figs 11 and 12) Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed-circuit board with epoxy glass dielectric (ε r = 4.5); thickness 1⁄16 inch. The other side of the board is fully metallized and used as a ground plane. The ground planes on each side of the board are connected together by means of copper straps and hollow rivets. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C2, C25, C26 multilayer ceramic chip capacitor; note 1 91 pF C3 film dielectric trimmer 4 to 40 pF 2222 809 08002 C4 multilayer ceramic chip capacitor; note 1 180 pF C5, C22, C24 film dielectric trimmer 5 to 60 pF 2222 809 08003 C6 multilayer ceramic chip capacitor; note 1 100 pF C7, C9, C12, C14, C17, C19 multilayer ceramic chip capacitor; note 1 100 nF 2222 852 47104 C8, C10, C15, C16 multilayer ceramic chip capacitor; note 1 680 pF C11, C20 multilayer ceramic chip capacitor; note 1 10 nF 2222 852 47103 C13, C18 electrolytic capacitor 10 µF , 63 V C21 multilayer ceramic chip capacitor; note 1 82 pF C23 multilayer ceramic chip capacitor; note 1 33 pF L1, L3, L22, L24 stripline; note 2 55 Ω 111 × 2.5 mm L2, L23 semi-rigid cable 50 Ω length 111 mm ext. dia 2.2 mm L4, L5 stripline; note 2 50 Ω 6.5× 2.8 mm L6, L7 stripline; note 2 50 Ω 35 × 2.8 mm L8, L9 stripline; note 2 50 Ω 5 × 2.8 mm L10, L11 stripline; note 2 50 Ω 9 × 2.8 mm L12, L15 grade 3B Ferroxcube wideband HF choke 4312 020 36642 L13, L14 4 turns enamelled 1 mm copper wire 50 nH length 6.5 mm int. dia. 4 mm leads 2× 5m m L16, L17 stripline; note 2 50 Ω 17 × 2.8 mm L18, L19 stripline; note 2 50 Ω 26 × 2.8 mm L20, L21 stripline; note 2 50 Ω 4 × 2.8 mm R1, R2, R7, R8 metal film resistor 0.4 W, 10 Ω R3, R4 10 turns potentiometer 50 k Ω R5, R6 metal film resistor 0.4 W, 205 k Ω
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Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B Fig.12 Component layout for 175 MHz class-B test circuit. Dimensions in mm. The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. handbook, full pagewidth strap strap rivet rivet rivet rivet rivet rivet strap strap strapstrap strap strap 110 200 MGR750 +VG +VD +VG +VD L1 + L2 L23 + L24 C3 L4 L5 C4 C10 L9R1 L10 L11 C16 C15 L13 L14 L16 L17 C21 C22 C23 C24 L18 L19 L20 L21 L22 C25 C26 C17 C19 C20 L15 C18 L12 C13 C12 C11 C14
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Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B Fig.13 Input impedance as a function of frequency (series components); typical values per section. Class-B operation; VDS = 28 V; IDQ =2 × 50 mA; R GS =1 0Ω ; PL = 60 W (total device). handbook, halfpage 0 100 200 400 MGR746 Zi (Ω ) f (MHz) ri xi 300 Fig.14 Load impedance as a function of frequency (series components); typical values per section. Class-B operation; VDS = 28 V; IDQ =2 × 50 mA; R GS =1 0Ω ; PL = 60 W (total device). handbook, halfpage 0 100 200 400 MGR747 ZL (Ω ) f (MHz) R L XL 300 Fig.15 Definition of MOS impedance. handbook, halfpage MBA379Zi ZL Fig.16 Power gain as a function of frequency; typical values per section. Class-B operation; VDS = 28 V; IDQ =2 × 50 mA; R GS =1 0Ω ; PL = 60 W (total device). handbook, halfpage 100 200 400 MGR748 3000 G p (dB) f (MHz)
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Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT161A 99-03-29 99-10-04 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 8 leads SOT161A U 2H D D 1 A F A b Mw 3b1 H 1 M MCw 2 w 1p ABM M M EE1 Q c q U 1 e e1 C B UNIT A mm Db 2.04 1.77 2.93 2.66 0.18 0.10 10.22 10.00 E 10.21 10.00 e 3.50 16.81 16.21 10.34 10.08 7.27 6.47 c e1 U 2 0.250.25 0.51 w 3 18.42 qw 2w 1F 2.70 2.08 U 1 24.97 24.71 H 1 12.83 12.57 p 3.33 3.07 Q 4.32 4.063.80 inches 0.080 0.070 0.115 0.105 0.007 0.004 0.402 0.394 D 1 10.21 9.94 0.402 0.391 0.402 0.394 10.21 9.94 0.402 0.391 0.138 0.662 0.638 0.407 0.397 0.286 0.082 0.983 0.973 0.505 0.495 0.131 0.121 0.170 0.1600.150 H DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
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Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.
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Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B NOTES
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Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B NOTES
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Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B NOTES
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