BLF245B

BLF245B PHILIPS | Alldatasheet

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Technical content

Product specification September 1992 DISCRETE SEMICONDUCTORS BLF245B VHF push-pull power MOS transistor

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B

FEATURES

• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures excellent reliability.

DESCRIPTION

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT279 balanced flange envelope, with a ceramic cap. The mounting flange provides the common source connection for the transistors. PINNING - SOT279 PIN DESCRIPTION 1 gate 1 2 drain 1 3 gate 2 4 drain 2 5 source PIN CONFIGURATION CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Fig.1 Simplified outline and symbol. fpage 14 Top view MSB018 MBB157 s QUICK REFERENCE DATA RF performance at Th = 25°C in a push-pull common source test circuit. MODE OF OPERATION f (MHz) VDS (V) PL (W) G P (dB) ηD (%) CW, class-B 175 28 30 > 14 > 55

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwise specified. THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V ±VGS gate-source voltage − 20 V ID DC drain current − 4.5 A Ptot total power dissipation up to T mb = 25°C; total device; both sections equally loaded − 75 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-mb thermal resistance from junction to mounting base total device; both sections equally loaded 2.3 K/W R th mb-h thermal resistance from mounting base to heatsink total device; both sections equally loaded 0.3 K/W Fig.2 DC SOAR. (1) Current in this area may be limited by RDS(on). (2) Tmb = 25°C. Total device; both sections equally loaded. handbook, halfpage MRA922 10−1 102 ID (A) VDS (V) 102 (1) (2) Fig.3 Power/temperature derating curves. (1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded. handbook, halfpage 120 04 0 8 0 Ptot (W) 120 Th (oC) 160 (2) (1) MRA929

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B CHARACTERISTICS (per section) Tj = 25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage ID = 5 mA; VGS = 0 65 −− V IDSS drain-source leakage current VGS = 0; VDS = 28 V −− 1m A IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 −− 1 µA VGS(th) gate-source threshold voltage ID = 5 mA; VDS = 10 V 2 − 4.5 V gfs forward transconductance I D = 0.75 A; VDS = 10 V 600 850 − mS R DS(on) drain-source on-state resistance ID = 0.75 A; VGS = 10 V − 0.8 1.5 Ω IDSX on-state drain current V GS = 10 V; VDS = 10 V − 5 − A C is input capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 60 − pF C os output capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 40 − pF C rs feedback capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 4.5 − pF Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values per section. VDS = 10 V. handbook, halfpage2 MGP180 10 10 2 1031 T.C. (mV/K) ID (mA) Fig.5 Drain current as a function of gate-source voltage, typical values per section. VDS = 10 V. handbook, halfpage 048 1 6 MGP181 ID (A) VGS (V) Tj = 25 °C 125 °C

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values per section. ID = 0.75 A; VGS = 10 V handbook, halfpage 40 80 160 120 MGP182 R DS(on) (Ω ) Tj (°C) Fig.7 Input and output capacitance as functions of drain-source voltage, typical values per section. VGS = 0; f = 1 MHz. handbook, halfpage 01 0 2 0 4 0 160 120 MGP183 C (pF) VDS (V) C is C os Fig.8 Feedback capacitance as a function of drain-source voltage, typical values per section. VGS = 0; f = 1 MHz. handbook, halfpage 01 0 2 0 4 0 MGP184 C rs (pF) VDS (V)

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25°C; Rth mb-h = 0.3 K/W; unless otherwise specified. RF performance in a push-pull, common source, class-B test circuit. MODE OF OPERATION f (MHz) VDS (V) IDQ (mA) PL (W) G P (dB) ηD (%) CW, class-B 175 28 2 × 25 30 > 14 typ. 18 > 55 typ. 65 Ruggedness in class-B operation The BLF245B is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases, under the following conditions: V DS = 28 V, f = 175 MHz at rated output power. Fig.9 Power gain and efficiency as functions of output power, typical values. Class-B operation; VDS = 28 V; IDQ = 2× 25 mA; ZL = 8.8+ j12.7Ω ; f = 175 MHz. handbook, halfpage 01 0 2 0 4 0 MGP185 G p (dB) G p PL (W) ηD ηD Fig.10 Load power as a function of input power, typical values. Class-B operation; VDS = 28 V; IDQ = 2× 25 mA; ZL = 8.8+ j12.7Ω ; f = 175 MHz. handbook, halfpage 0 0.5 1.0 2.0 1.5 MGP186 PL (W) PIN (W)

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B List of components (see test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2 multilayer ceramic chip capacitor (note 1) 270 pF C3 multilayer ceramic chip capacitor (note 1) 24 pF C4 film dielectric trimmer 4 to 60 pF 2222 809 08002 C5, C25, C26 multilayer ceramic chip capacitor (note 1) 91 pF C6, C22, C24 film dielectric trimmer 5 to 60 pF 2222 809 08003 C7, C9, C12, C14, C17, C19 multilayer ceramic chip capacitor 100 nF 2222 852 47104 handbook, full pagewidth C11 C12 C17 C10 C20 C19 C16 C18 L11 L16 C25 L20 L22 L21 C26 L18 L19 C5 C6C3 C4 C27 L17L13L7 L6L4 L12 L15 +VG +VD 50 Ω input D.U.T. C13 C15 C14 L10 L14 +VD R5R3 +VG C21 C22 C23 C24 50 Ω output MGP187 Fig.11 Test circuit for class-B operation. f = 175 MHz.

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with epoxy glass dielectric (ε r = 4.5), thickness1⁄16 inch. The other side of the board is fully metallized and used as a ground plane. The ground planes on each side of the board are connected together by means of copper straps and hollow rivets. C8, C10 multilayer ceramic chip capacitor (note 1) 680 pF C11, C20 multilayer ceramic chip capacitor 10 nF 2222 852 47103 C13, C18 electrolytic capacitor 10 µF, 63 V C15, C16 multilayer ceramic chip capacitor (note 1) 100 pF C21, C27 multilayer ceramic chip capacitor (note 1) 75 pF C23 multilayer ceramic chip capacitor (note 1) 36 pF L1, L3, L20, L22 stripline (note 2) 55 Ω length 111 mm width 2.5 mm L2, L21 semi-rigid cable 50 Ω length 111 mm ext. dia. 2.2 mm L4, L5 stripline (note 2) 49.5 Ω length 28 mm width 3 mm L6, L7 stripline (note 2) 49.5 Ω length 22.5 mm width 3 mm L8, L9 stripline (note 2) 49.5 Ω length 4.5 mm width 3 mm L10, L11 grade 3B Ferroxcube RF choke 4312 020 36642 L12, L13 stripline (note 2) 49.5 Ω length 21 mm width 3 mm L14, L15 4 turns enamelled 1 mm copper wire 70 nH length 9 mm int. dia. 6 mm leads 2× 5 mm L16, L17 stripline (note 2) 49.5 Ω length 30 mm width 3 mm L18, L19 stripline (note 2) 49.5 Ω length 26 mm width 3 mm R1, R2 0.4 W metal film resistor 10 Ω R3, R4 10 turns potentiometer 50 Ω R5, R6 0.4 W metal film resistor 205 k Ω R7, R8 0.4 W metal film resistor 10 Ω COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B Fig.12 Component layout for 175 MHz test circuit. The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as a ground. Earth connections are made by means of copper straps and hollow rivets for a direct contact between the upper and lower sheets. handbook, full pagewidth MBA378 L11 C19 C20 C18 R8C17 L21 + L22 L20 L1 + L2 +VG +VD +VG +VD C15 R7 C13 C11 C12 L10 C14 L16 L12 L13 C10 L17 L18 L19 C16 L15 L14 C23 C25 C26 C24 C22 C21 L7 C27 handbook, full pagewidth MBA377 copper strap copper strap copper strap copper strap copper strap copper strap copper strap copper strap 200 mm 110 mm rivetrivet rivet rivetrivet rivet

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B Fig.13 Input impedance as a function of frequency (series components), typical values per section. Class-B operation; VDS = 28 V; IDQ = 2× 25 mA; R GS = 10Ω ;PL = 30 W (total device). handbook, halfpage 0 100 200 400 −10 300 MGP188 Zi (Ω ) ri xi f (MHz) Fig.14 Load impedance as a function of frequency (series components), typical values per section. Class-B operation; VDS = 28 V; IDQ = 2× 25 mA; R GS = 10Ω ;PL = 30 W (total device). handbook, halfpage 100 200 400 300 MGP189 ZL (Ω ) R L XL f (MHz) Fig.15 Definition of MOS impedance. handbook, halfpage MBA379Zi ZL Fig.16 Power gain as a function of frequency, typical values per section. Class-B operation; VDS = 28 V; IDQ = 2× 25 mA; R GS = 10Ω ;PL = 30 W (total device). handbook, halfpage 0 100 200 400 300 MGP190 G p (dB) f (MHz)

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT279A 97-06-28 0 5 10 mm scale Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT279A D U 1 H 1 A U 2H E b Q F c M C A w 3 M Cw 2 q e B w 1 ABp M UNIT A mm Db 1.66 1.39 0.16 0.10 9.28 9.01 3.05 12.96 11.93 5.97 5.71 6.84 6.01 c EU 2 0.250.51 1.02 w 3 18.42 qw 2w 1F 3.05 2.54 U 1 24.90 24.63 H 1 4.96 4.19 p 3.48 3.22 Q 4.35 4.03 e 5.97 5.71 inches 0.065 0.055 0.006 0.004 0.365 0.355 0.12 0.51 0.47 0.235 0.225 0.269 0.100 0.98 0.97 0.195 0.165 0.137 0.127 0.171 0.159 0.235 0.225 H DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.