BLF225 PHILIPS | Alldatasheet

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Technical content

Product specification September 1992 DISCRETE SEMICONDUCTORS BLF225 VHF power MOS transistor

Philips Semiconductors Product specification VHF power MOS transistor BLF225

FEATURES

  • Easy power control
  • Good thermal stability
  • Withstands full load mismatch.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. PINNING - SOT123 PIN DESCRIPTION 1 drain 2 source 3 gate 4 source PIN CONFIGURATION CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Fig.1 Simplified outline and symbol. k, halfpage MSB057 s d g MBB072 QUICK REFERENCE DATA RF performance at Th = 25°C in a common source test circuit. MODE OF OPERATION f (MHz) VDS (V) PL (W) G p (dB) ηD (%) CW, class-B 175 12.5 30 > 8.5 > 60

Philips Semiconductors Product specification VHF power MOS transistor BLF225 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 40 V ±VGS gate-source voltage − 20 V ID DC drain current − 9A Ptot total power dissipation up to T mb = 25°C − 68 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER THERMAL RESISTANCE R th j-mb thermal resistance from junction to mounting base 2.6 K/W R th mb-h thermal resistance from mounting base to heatsink 0.3 K/W Fig.2 DC SOAR. (1) Current is this area may be limited by RDS(on). (2) Tmb =2 5°C. handbook, halfpage MRA915 10−1 102 ID (A) VDS (V) 102 (1) (2) Fig.3 Power/temperature derating curves. (1) Continuous operation. (2) Short-time operation during mismatch. handbook, halfpage 04 0 8 0 (1) 160 100 120 MGP122 Ptot (W) Th (°C) (2)

Philips Semiconductors Product specification VHF power MOS transistor BLF225 CHARACTERISTICS Tj = 25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 30 mA 40 −− V IDSS drain-source leakage current VGS = 0; VDS = 12.5 V −− 1m A IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 −− 1 µA VGS(th) gate-source threshold voltage ID = 30 mA; VDS = 10 V 2 − 4.5 V gfs forward transconductance I D = 3.5 A; VDS = 10 V 1.5 2.2 − S R DS(on) drain-source on-state resistance ID = 3.5 A; VGS = 15 V − 0.25 0.35 Ω IDSX on-state drain current V GS = 15 V; VDS = 10 V − 16 − A C is input capacitance V GS = 0; VDS = 12.5 V; f = 1 MHz− 120 − pF C os output capacitance V GS = 0; VDS = 12.5 V; f = 1 MHz− 140 − pF C rs feedback capacitance V GS = 0; VDS = 12.5 V; f = 1 MHz− 20 − pF Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values. VDS =1 0V . handbook, halfpage6 102 MEA741 101 1 ID (A) 10 T.C. (mV/K) Fig.5 Drain current as a function of gate-source voltage, typical values. VDS =1 0V . handbook, halfpage MRA244 51 0 ID (A) VGS (V) 15 20

Philips Semiconductors Product specification VHF power MOS transistor BLF225 Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values. VGS =1 5V ; ID = 3.5 A. handbook, halfpage 0.5 R DS(on) (Ω ) 0.4 0.3 0.2 0.1 50 100 Tj (°C) 150 MGP123 Fig.7 Input and output capacitance as functions of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage C os C is VDS (V) 600 400 200 MEA739 C (pF) Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage VDS (V) C rs (pF) 12 16 MRA242

Philips Semiconductors Product specification VHF power MOS transistor BLF225 APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25°C; Rth mb-h = 0.3 K/W; unless otherwise specified. RF performance in CW operation in a common source class-B test circuit. MODE OF OPERATION f (MHz) VDS (V) IDQ (mA) PL (W) G P (dB) ηC (%) CW, class-B 175 12.5 100 30 > 8.5 typ. 9.5 > 60 typ. 70 Ruggedness in class-B- operation The BLF225 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: V DS = 15.5 V; f = 175 MHz at rated load power. Fig.9 Power gain and efficiency as functions of load power, typical values. Class-B operation; VDS = 12.5 V; IDQ = 100 mA; f = 175 MHz. handbook, halfpage 01 0 5 0 20 30 40 MGP124 G p (dB) G p PL (W) η η (%) Fig.10 Load power as a function of input power, typical values. Class-B operation; VDS = 12.5 V; IDQ = 100 mA; f = 175 MHz. handbook, halfpage PL (W)

8 PIN (W) 12

Philips Semiconductors Product specification VHF power MOS transistor BLF225 Fig.11 Test circuit for class-B operation. f = 175 MHz. handbook, full pagewidth MGP125 50 Ω input L1 L2 D.U.T. L3 L6 L4R1 VBIAS C10C8 VDS R4 C7 50 Ω output

Philips Semiconductors Product specification VHF power MOS transistor BLF225 List of components (class-B test circuit) Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric (ε r = 4.5), thickness1⁄16 inch. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1 film dielectric trimmer 4 to 40 pF 2222 809 07008 C2, C10 film dielectric trimmer 5 to 60 pF 2222 809 07011 C3 multilayer ceramic chip capacitor (note 1) 100 pF, 500 V C4 ceramic chip capacitor 100 nF, 50 V 2222 852 47104 C5 multilayer ceramic chip capacitor (note 1) 680 pF, 500 V C6 electrolytic capacitor 10 µF, 63 V 2222 030 38109 C7 polyester capacitor 100 nF, 250 V C8 multilayer ceramic chip capacitor (note 1) 43 pF, 500 V C9 film dielectric trimmer 7 to 100 pF 2222 809 07015 L1 3 turns enamelled 0.5 mm copper wire 18 nH length 3.3 mm int. dia. 2 mm leads 2× 5m m L2, L3 stripline (note 2) 31 Ω 12 × 6m m L4 3 turns enamelled 1.5 mm copper wire 28 nH length 8.2 mm int. dia. 4 mm leads 2× 5m m L5 grade 3B Ferroxcube RF choke 4312 020 36642 L6 1 turn enamelled 1.5 mm copper wire 36 nH length 4 mm int. dia. 3.5 mm leads 2× 5m m R1 0.4 W metal film resistor 1 k Ω 2322 151 51002 R2 0.4 W metal film resistor 1 M Ω 2322 151 51005 R3 10 turns cermet potentiometer 5 k Ω R4 0.4 W metal film resistor 10 Ω 2322 151 51009

Philips Semiconductors Product specification VHF power MOS transistor BLF225 Fig.12 Component layout for 175 MHz class-B test circuit. The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. Dimensions in mm. handbook, full pagewidth MGP126 strap rivets rivets strap L2 L3 C6L5 C10 C1 C2 150

Philips Semiconductors Product specification VHF power MOS transistor BLF225 Fig.13 Input impedance as a function of frequency (series components), typical values. Class B-operation; VDS = 12.5 V; IDQ = 100 mA; PL =3 0W . handbook, halfpage 0 50 100 200 −20 −30 −10 150 MGP128 Zi (Ω ) xi f (MHz) ri Fig.14 Load impedance as a function of frequency (series components), typical values. Class B-operation; VDS = 12.5 V; IDQ = 100 mA; PL =3 0W . handbook, halfpage 50 100 200 150 MGP129 ZL (Ω ) R L XL f (MHz) Fig.15 Definition of MOS impedance. handbook, halfpage MBA379Zi ZL Fig.16 Power gain as a function of frequency, typical values. Class-B operation; VDS = 12.5 V; IDQ = 100 mA; PL =3 0W . handbook, halfpage 50 100 G p (dB) 200 MGA053 150 f (MHz)

Philips Semiconductors Product specification VHF power MOS transistor BLF225 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT123A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 4 leads SOT123A U 3U 2 H H L b Q D U 1 q A F c p Mw 2 B C C A w 1 M AB α UNIT A mm Db 5.82 5.56 0.18 0.10 9.73 9.47 9.63 9.42 20.71 19.93 3.33 3.04 6.61 6.09 7.47 6.37 c D 1 U 2 U 3 9.78 9.39 1.020.51 w 2w 1 45° αL 5.61 5.16 U 1 25.15 24.38 Q 4.63 4.11 q 18.42 F 2.72 2.31 inches 0.229 0.219 0.007 0.004 0.383 0.373 0.397 0.371 0.815 0.785 0.131 0.120 0.26 0.24 0.294 0.251 0.385 0.370 0.040.020.221 0.203 0.99 0.96 0.182 0.162 0.7250.107 0.091 pH DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification VHF power MOS transistor BLF225 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.