BLF177

BLF177 PHILIPS

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Technical content

Product specification File under Discrete Semiconductors, SC08a September 1992 DISCRETE SEMICONDUCTORS BLF177 HF/VHF power MOS transistor

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177

FEATURES

• High power gain
• Low intermodulation distortion
• Easy power control
• Good thermal stability
• Withstands full load mismatch.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (V GS ) information is provided for matched pair applications. Refer to the 'General' section for further information. PINNING - SOT121 PIN DESCRIPTION 1 drain 2 source 3 gate 4 source PIN CONFIGURATION CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Fig.1 Simplified outline and symbol. andbook, halfpage MLA876 s d g MBB072 QUICK REFERENCE DATA RF performance at Th = 25°C in a common source test circuit. MODE OF OPERATION f (MHz) VDS (V) PL (W) G P (dB) ηD (%) (dB) (dB) SSB class-AB 28 50 150 (PEP) > 20 > 35 <− 30 <− 30 CW class-B 108 50 150 typ. 19 typ. 70 −−

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 110 V ±VGS gate-source voltage − 20 V ID DC drain current − 16 A Ptot total power dissipation up to T mb = 25°C − 220 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER THERMAL RESISTANCE R th j-mb thermal resistance from junction to mounting base max. 0.8 K/W R th mb-h thermal resistance from mounting base to heatsink max. 0.2 K/W Fig.2 DC SOAR. (1) Current is this area may be limited by RDS(on). (2) Tmb = 25°C. handbook, halfpage102 10−1 MRA906 11 0 VDS (V) ID (A) 102 103 (1) (2) Fig.3 Power/temperature derating curves. (1) Short-time operation during mismatch. (2) Continuous operation. handbook, halfpage 300 200 100 (2) (1) 100 150 MGP089 Ptot (W) Th (°C)

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 CHARACTERISTICS Tj = 25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage ID = 50 mA; VGS = 0 110 −− V IDSS drain-source leakage current VGS = 0; VDS = 50 V −− 2.5 mA IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 −− 1 µA VGS(th) gate-source threshold voltage ID = 50 mA; VDS = 10 V 2 − 4.5 V ΔVGS gate-source voltage difference of matched pairs ID = 50 mA; VDS = 10 V −− 100 mV gfs forward transconductance I D = 5 A; VDS = 10 V 4.5 6.2 − S R DS(on) drain-source on-state resistance ID = 5 A; VGS = 10 V − 0.2 0.3 Ω IDSX on-state drain current V GS = 10 V; VDS = 10 V − 25 − A C is input capacitance V GS = 0; VDS = 50 V; f = 1 MHz − 480 − pF C os output capacitance V GS = 0; VDS = 50 V; f = 1 MHz − 190 − pF C rs feedback capacitance V GS = 0; VDS = 50 V; f = 1 MHz − 14 − pF Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values. VDS = 10 V; valid for Th = 25 to 70°C. handbook, halfpage0 MGP090 10−1 11 010−2 ID (A) T.C. (mV/K) Fig.5 Drain current as a function of gate-source voltage, typical values. VDS = 10 V. handbook, halfpage 51 0 1 5 MGP091 ID (A) VGS (V)

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values. ID = 5 A; VGS = 10 V. handbook, halfpage 400 300 200 100 50 100 150 MGP092 R DS(on) (mΩ ) Tj (°C) Fig.7 Input and output capacitance as functions of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 1200 800 400 20 40 C is C os 60VDS (V) C (pF) MBK408 Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 300 200 100 10 50 20 30 40 MGP093 C rs (pF) VDS (V)

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 APPLICATION INFORMATION FOR CLASS-AB OPERATION Th = 25°C; Rth mb-h = 0.2 K/W; ZL = 6.25 + j0Ω unless otherwise specified. RF performance in SSB operation in a common source class-AB circuit. f1 = 28.000 MHz; f2 = 28.001 MHz. Note 1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are referred to the according level of either the equal amplified tones. Related to the according peak envelope power these figures should be decreased by 6 dB. MODE OF OPERATION f (MHz) V DS (V) IDQ (A) PL (W) G P (dB) ηD (%) (dB) (note1) (dB) (note1) SSB, class-AB 28 50 0.7 20 to 150 (PEP) > 20 typ. 35 > 35 typ. 40 <− 30 typ.−35 <− 30 typ.−38 Ruggedness in class-AB operation The BLF177 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: V DS = 50 V; f = 28 MHz at rated output power. Fig.9 Power gain as a function of load power, typical values. Class-AB operation; VDS = 50 V; IDQ = 0.7 A; R GS = 5Ω ;f1 = 28.000 MHz; f2 = 28.001 MHz. handbook, halfpage 100 200 MGP096 G p (dB) PL (W) PEP Fig.10 Two tone efficiency as a function of load power, typical values. Class-AB operation; VDS = 50 V; IDQ = 0.7 A; R GS = 5Ω ;f1 = 28.000 MHz; f2 = 28.001 MHz. handbook, halfpage 100 200 MGP094 ηD (%) PL (W) PEP

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 Fig.11 Third order intermodulation distortion as a function of load power, typical values. Class-AB operation; VDS = 50 V; IDQ = 0.7 A; R GS = 5Ω ;f1 = 28.000 MHz; f2 = 28.001 MHz. handbook, halfpage −20 −40 −30 −50 −60 100 200 MGP097 (dB) PL (W) PEP Fig.12 Fifth order intermodulation distortion as a function of load power, typical values. Class-AB operation; VDS = 50 V; IDQ = 0.7 A; R GS = 5Ω ;f1 = 28.000 MHz; f2 = 28.001 MHz. handbook, halfpage −20 −40 −30 −50 −60 100 200 MGP098 (dB) PL (W) PEP Fig.13 Test circuit for class-AB operation. f = 28 MHz. handbook, full pagewidth MGP095 input 50 Ω L1 L2 D.U.T. L3 L6 L4R2R1 C4C2 +VG C13 C10 C11 C12 C15 +VD C14 R5 C7 output 50 Ω

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 List of components (class-AB test circuit) Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε r = 2.2), thickness 1.6 mm. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C4, C13, C14 film dielectric trimmer 7 to 100 pF 2222 809 07015 C2 multilayer ceramic chip capacitor (note 1) 56 pF C3, C11 multilayer ceramic chip capacitor (note 1) 62 pF C5, C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C7 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104 C5 multilayer ceramic chip capacitor 10 nF 2222 852 47103 C7 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104 C8 electrolytic capacitor 2.2 µF, 63 V C9, C10 multilayer ceramic chip capacitor (note 1) 20 pF C12 multilayer ceramic chip capacitor (note 1) 100 pF C15 multilayer ceramic chip capacitor (note 1) 150 pF L1 5 turns enamelled 0.7 mm copper wire 133 nH length 4.5 mm; int. dia. 6 mm; leads 2× 5 mm L2, L3 stripline (note 2) 41.1 Ω length 13× 6 mm L4 7 turns enamelled 1.5 mm copper wire 236 nH length 12.5 mm; int. dia. 8 mm; leads 2× 5 mm L5 grade 3B Ferroxcube wideband HF choke 4312 020 36642 L6 5 turns enamelled 2 mm copper wire 170 nH length 11.5 mm; int. dia. 8 mm; leads 2× 5 mm R1, R2 1 W metal film resistor 10 Ω R2 0.4 W metal film resistor 10 k Ω R3 0.4 W metal film resistor 1 M Ω R5 1 W metal film resistor 10 k Ω

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 Fig.14 Input impedance as a function of frequency (series components), typical values. Class-AB operation; VDS = 50 V; IDQ = 0.7 A; PL = 150 W (PEP); RGS = 6.25Ω ;R L = 6.25Ω . handbook, halfpage 10 20 30 MGP099 Zi (Ω ) ri xi f (MHz) Fig.15 Power gain as a function of frequency, typical values. Class-AB operation; VDS = 50 V; IDQ = 0.7 A; PL = 150 W (PEP); RGS = 6.25Ω ;R L = 6.25Ω . handbook, halfpage 10 20 30 MGP100 G p (dB) f (MHz)

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25°C; Rth mb-h = 0.2 K/W; RGS = 15.8Ω ; unless otherwise specified. RF performance in CW operation in a common source class-B test circuit. MODE OF OPERATION f (MHz) VDS (V) IDQ (A) PL (W) G P (dB) ηD (%) CW, class-B 108 50 0.1 150 typ. 19 typ. 70 Fig.16 Power gain as a function of load power, typical values. Class-B operation; VDS = 50 V; IDQ = 100 mA; R GS = 15.8Ω ; f = 108 MHz. handbook, halfpage 0 100 200 MGP101 G p (dB) PL (W) Fig.17 Two tone efficiency as a function of load power, typical values. Class-B operation; VDS = 50 V; IDQ = 100 mA; R GS = 15.8Ω ; f = 108 MHz. handbook, halfpage 100 100 200 MGP102 η (%) PL (W)

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 Fig.18 Load power as a function of input power, typical values. Class-B operation; VDS = 50 V; IDQ = 100 mA; R GS = 15.8Ω ; f = 108 MHz. handbook, halfpage 012 4 200 100 MGP103 PL (W) PIN (W) Fig.19 Test circuit for class-B operation. f = 108 MHz. handbook, full pagewidth MGP104 input 50 Ω C6 C11 C19 L1 L3 D.U.T. BLF177 L4 L8 R2R1 C2 C5 C3 C4 C16C14 C13 C15 C17 +VD L7 C18 R6 C12 C9 C10 output 50 ΩL2

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 List of components (class-B test circuit) Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε r = 2.2), thickness 1.6 mm. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2, C16, C18 film dielectric trimmer 2.5 to 20 pF 2222 809 07004 C3 multilayer ceramic chip capacitor (note 1) 20 pF C4, C5 multilayer ceramic chip capacitor (note 1) 62 pF C6, C7, C9, C10 multilayer ceramic chip capacitor (note 1) 1 nF C8 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C11 multilayer ceramic chip capacitor 10 nF 2222 852 47103 C12 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104 C13, C14 multilayer ceramic chip capacitor (note 1) 36 pF C15 multilayer ceramic chip capacitor (note 1) 12 pF C17 multilayer ceramic chip capacitor (note 1) 5.6 pF C19 electrolytic capacitor 4.4 µF, 63 V 2222 030 28478 L1 3 turns enamelled 0.8 mm copper wire 22 nH length 5.5 mm; int. dia. 3 mm; leads 2× 5 mm L2 stripline (note 2) 64.7 Ω 31 × 3 mm L3, L4 stripline (note 2) 41.1 Ω 10 × 6 mm L5 6 turns enamelled 1.6 mm copper wire 122 nH length 13.8 mm; int. dia. 6 mm; leads 2× 5 mm L6 grade 3B Ferroxcube wideband HF choke 4312 020 36642 L7 1 turn enamelled 1.6 mm copper wire 16.5 nH int. dia. 9 mm; leads 2× 5 mm L8 2 turns enamelled 1.6 mm copper wire 34.4 nH length 3.9 mm; int. dia. 6 mm; leads 2× 5 mm R1, R2 1 W metal film resistor 31.6 Ω R3 0.4 W metal film resistor 1 k Ω R4 cermet potentiometer 5 k Ω R5 0.4 W metal film resistor 44.2 Ω R6 1 W metal film resistor 10 Ω

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 Fig.20 Component layout for 108 MHz class-B test circuit. The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the source leads and at the input and output copper straps are used for a direct contact between upper and lower sheets. Dimensions in mm. handbook, full pagewidth MGP105 174 strap strap straprivet C1 C2 C3 C4 R1 R2 L4 L7 L8C14 C13 C12 +VD C10 C11 C15 C19 C16 C18 C17

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 Fig.21 Input impedance as a function of frequency (series components), typical values. Class-B operation; VDS = 50 V; IDQ = 0.1 A; PL = 150 W; RGS =1 5Ω . handbook, halfpage 0 200 MGP107 100 ri xi Zi (Ω ) f (MHz) Fig.22 Load impedance as a function of frequency (series components), typical values. Class-B operation; VDS = 50 V; IDQ = 0.1 A; PL = 150 W; RGS =1 5Ω . handbook, halfpage 0 200 MGP108 100 XL ZL (Ω ) f (MHz) R L Fig.23 Definition of MOS impedance. handbook, halfpage MBA379Zi ZL Fig.24 Power gain as a function of frequency, typical values. Class-B operation; VDS = 50 V; IDQ = 0.1 A; PL = 150 W; RGS =1 5Ω . handbook, halfpage 0 200 100 MGP109 G p (dB) f (MHz)

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT121B 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 4 leads SOT121B U 3D 1U 2 H H L b Q D U 1 q A F c p w 1 M Mw 2 B C C A AB α 0.51 UNIT A mm Db 5.82 5.56 0.16 0.10 12.86 12.59 12.83 12.57 28.45 25.52 3.30 3.05 6.48 6.22 7.27 6.17 c D 1 U 3U 2 12.32 12.06 1.02 w 1 w 2 45° αL 7.93 6.32 U 1 24.90 24.63 Q 4.45 3.91 q 18.42 F 2.67 2.41 0.02inches 0.229 0.219 0.006 0.004 0.506 0.496 0.505 0.495 1.120 1.005 0.130 0.120 0.255 0.245 0.286 0.243 0.485 0.475 0.040.312 0.249 0.98 0.97 0.175 0.154 0.7250.105 0.095 pH DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.