BLF147 PHILIPS

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Technical content

Product specification September 1992 DISCRETE SEMICONDUCTORS BLF147 VHF power MOS transistor

Philips Semiconductors Product specification VHF power MOS transistor BLF147

FEATURES

  • High power gain
  • Low intermodulation distortion
  • Easy power control
  • Good thermal stability
  • Withstands full load mismatch.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (V GS ) information is provided for matched pair applications. Refer to 'General' section for further information. PINNING - SOT121 PIN DESCRIPTION 1 drain 2 source 3 gate 4 source PIN CONFIGURATION CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Fig.1 Simplified outline and symbol. ook, halfpage MLA876 s d g MBB072 QUICK REFERENCE DATA RF performance at Th = 25°C in a common source test circuit. MODE OF OPERATION f (MHz) VDS (V) PL (W) G p (dB) ηD (%) (dB) (dB) SSB, class-AB 28 28 150 (PEP) > 17 > 35 <− 30 <− 30 CW, class-B 108 28 150 typ. 70 typ. 70 −−

Philips Semiconductors Product specification VHF power MOS transistor BLF147 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V ±VGS gate-source voltage − 20 V ID DC drain current − 25 A Ptot total power dissipation up to T mb = 25°C − 220 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER THERMAL RESISTANCE R th j-mb thermal resistance from junction to mounting base 0.8 K/W R th mb-h thermal resistance from mounting base to heatsink 0.2 K/W Fig.2 DC SOAR. (1) Current is this area may be limited by RDS(on). (2) Tmb = 25°C. handbook, halfpage 102 11 0 VDS (V) ID (A) 102 (1) MRA904 (2) Fig.3 Power/temperature derating curves. (1) Short-time operation during mismatch. (2) Continuous operation. handbook, halfpage 300 200 100 50 100 150 MGP049 Ptot (W) Th (°C) (1) (2)

Philips Semiconductors Product specification VHF power MOS transistor BLF147 CHARACTERISTICS Tj = 25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage ID = 100 mA; VGS = 0 65 −− V IDSS drain-source leakage current VGS = 0; VDS = 28 V −− 5m A IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 −− 1 µA VGS(th) gate-source threshold voltage ID = 200 mA; VDS = 10 V 2 − 4.5 V ΔVGS gate-source voltage difference of matched pairs ID = 100 mA; VDS = 10 V −− 100 mV gfs forward transconductance I D = 8 A; VDS = 10 V 5 7.5 − S R DS(on) drain-source on-state resistance ID = 8 A; VGS = 10 V − 0.1 0.15 Ω IDSX on-state drain current V GS = 10 V; VDS = 10 V − 37 − A C is input capacitance V GS = 0; VDS = 28 V; f = 1 MHz− 450 − pF C os output capacitance V GS = 0; VDS = 28 V; f = 1 MHz− 360 − pF C rs feedback capacitance V GS = 0; VDS = 28 V; f = 1 MHz− 55 − pF Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values. VDS = 28 V; valid for Th = 25 to 70°C. handbook, halfpage0 MGP050 10−1 11 010−2 T.C. (mV/K) ID (A) Fig.5 Drain current as a function of gate-source voltage, typical values. VDS = 10 V. handbook, halfpage 51 0 2 0 15 MGP051 VGS (V) ID (A)

Philips Semiconductors Product specification VHF power MOS transistor BLF147 Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values. ID = 8 A; VGS = 10 V. handbook, halfpage 0 50 100 150 170 150 110 130 MGP052 R DS (on) (mΩ ) Tj (°C) Fig.7 Input and output capacitance as functions of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 400 800 1200 1400 01 0 2 0 VDS (V) C (pF) C is C os 30 40 MRA903 Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 100 200 300 400 500 01 0 2 0 C rs (pF) VDS (V) MRA902

Philips Semiconductors Product specification VHF power MOS transistor BLF147 APPLICATION INFORMATION FOR CLASS-AB OPERATION Th = 25°C; Rth mb-h = 0.2 K/W; RGS = 9.8Ω; unless otherwise specified. RF performance in SSB operation in a common source class-AB circuit. f1 = 28.000 MHz; f2 = 28.001 MHz. Notes 1. Optimum load impedance: 2.1 + j0Ω . 2. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are referred to the according level of either the equal amplified tones. Related to the according peak envelope power these figures should be decreased by 6 dB. P L (W) f (MHz) VDS (V) IDQ (A) G p (dB) ηD (%) (dB) (note2) (dB) (note2) 20 to 150 (PEP) 28 28 1 > 17 typ. 19 > 35 typ. 40 <− 30 typ.−34 <− 30 typ.−40 Ruggedness in class-AB operation The BLF147 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: V DS = 28 V; f = 28 MHz at rated load power. Fig.9 Gain as a function of load power, typical values. Class-AB operation; VDS = 28 V; IDQ = 1 A; R GS = 9.8Ω ; f1 = 28.000 MHz; f2 = 28.001 MHz. handbook, halfpage 0 200 MGP053

100 PL (W) PEP

(dB) Fig.10 Efficiency as a function of load power, typical values. Class-AB operation; VDS = 28 V; IDQ = 1 A; R GS = 9.8Ω ; f1 = 28.000 MHz; f2 = 28.001 MHz. handbook, halfpage 100 200 MGP054 ηD (%) PL (W) PEP

Philips Semiconductors Product specification VHF power MOS transistor BLF147 Fig.11 Third order intermodulation distortion as a function of load power, typical values. Class-AB operation; VDS = 28 V; IDQ = 1 A; R GS = 9.8Ω ; f1 = 28.000 MHz; f2 = 28.001 MHz. handbook, halfpage −20 −30 −40 −50 −60 100 200 MGP055 (dB) PL (W) PEP Fig.12 Fifth order intermodulation distortion as a function of load power, typical values. Class-AB operation; VDS = 28 V; IDQ = 1 A; R GS = 9.8Ω ; f1 = 28.000 MHz; f2 = 28.001 MHz. handbook, halfpage −20 −30 −40 −60 −50 100 200 MGP056 (dB) PL (W) PEP Fig.13 Test circuit for class-AB operation. f = 28 MHz. handbook, full pagewidth MGP057 input 50 Ω L1 L2 D.U.T. L3 L7 L4R2R1 +VG C13 C11 C10 C12 C15 +VD C14 L6L5 R5 C6 output 50 Ω

Philips Semiconductors Product specification VHF power MOS transistor BLF147 List of components (class-AB test circuit) Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε r = 2.2), thickness 1.6 mm. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C3, C13, C14 film dielectric trimmer 7 to 100 pF 2222 809 07015 C2, C8, C9 multilayer ceramic chip capacitor (note 1) 75 pF C4, C5 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C6 multilayer ceramic chip capacitors in parallel 3 × 100 nF 2222 852 47104 C7 electrolytic capacitor 2.2 µF, 63 V C10 multilayer ceramic chip capacitor (note 1) 100 pF C11, C12 multilayer ceramic chip capacitor (note 1) 150 nF C15 multilayer ceramic chip capacitor (note 1) 240 pF L1 6 turns enamelled 0.7 mm copper wire 145 nH length 5 mm; int. dia. 6 mm; leads 2× 5 mm L2, L3 stripline (note 2) 41.1 Ω length 13× 6 mm L4 4 turns enamelled 1.5 mm copper wire 148 nH length 8 mm; int. dia. 10 mm; leads 2× 5 mm L5, L6 grade 3B Ferroxcube wideband HF choke 4312 020 36642 L7 3 turns enamelled 2.2 mm copper wire 79 nH length 8 mm; int. dia. 8 mm; leads 2× 5 mm R1, R2 1 W metal film resistor 19.6 Ω 2322 153 51969 R3 0.4 W metal film resistor 10 k Ω 2322 151 71003 R4 0.4 W metal film resistor 1 M Ω 2322 151 71005 R5 1 W metal film resistor 10 Ω 2322 153 51009

Philips Semiconductors Product specification VHF power MOS transistor BLF147 Fig.14 Gain as a function of frequency, typical values. Class-AB operation; VDS = 28 V; IDQ = 1 A; R GS = 6.25Ω ; PL = 150 W (PEP); RL = 2.1Ω . handbook, halfpage 10 20 30 MGP058 G P (dB) f (MHz) Fig.15 Input impedance as a function of frequency (series components), typical values. Class-AB operation; VDS = 28 V; IDQ = 1 A; R GS = 6.25Ω ; PL = 150 W (PEP); RL = 2.1Ω . handbook, halfpage 10 20 xi ri MGP059 Zi (Ω ) f (MHz) Fig.16 Input impedance as a function of frequency (series components), typical values. Class-B operation; VDS = 28 V; IDQ = 0.2 A; R GS = 15Ω ; PL = 150 W. handbook, halfpage 0 50 100 200 150 ri xi MGP061 Zi (Ω ) f (MHz) Fig.17 Load impedance as a function of frequency (series components), typical values. Class-B operation; VDS = 28 V; IDQ = 0.2 A; R GS = 15Ω ; PL = 150 W. handbook, halfpage 0 50 100 200 150 R L XL MGP062 ZL (Ω ) f (MHz)

Philips Semiconductors Product specification VHF power MOS transistor BLF147 Fig.18 Power gain as a function of frequency, typical values. Class-B operation; VDS = 28 V; IDQ = 0.2 A; R GS = 15Ω ; PL = 150 W. handbook, halfpage 50 100 200 150 MGP060 f (MHz) G p (dB)

Philips Semiconductors Product specification VHF power MOS transistor BLF147 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT121B 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 4 leads SOT121B U 3D 1U 2 H H L b Q D U 1 q A F c p w 1 M Mw 2 B C C A AB α 0.51 UNIT A mm Db 5.82 5.56 0.16 0.10 12.86 12.59 12.83 12.57 28.45 25.52 3.30 3.05 6.48 6.22 7.27 6.17 c D 1 U 3U 2 12.32 12.06 1.02 w 1 w 2 45° αL 7.93 6.32 U 1 24.90 24.63 Q 4.45 3.91 q 18.42 F 2.67 2.41 0.02inches 0.229 0.219 0.006 0.004 0.506 0.496 0.505 0.495 1.120 1.005 0.130 0.120 0.255 0.245 0.286 0.243 0.485 0.475 0.040.312 0.249 0.98 0.97 0.175 0.154 0.7250.105 0.095 pH DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification VHF power MOS transistor BLF147 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.