BLF051SYC-12V-P KINGBRIGHT | Alldatasheet
Document overview
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Technical content
Features
!!!!!BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. !!!!!LOW CURRENT, POWER SAVINGS. !!!!!DIFFERENT COLOR AVAILABLE. !!!!!SOLID STATE, HIGH VIBRATION RESISTANT. !!!!!12 V INTERNAL RESISTOR. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Specifications are subject to change without notice.
Description
The Super Bright Yellow source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode.
SPEC NO: DSAB3170 REV NO: V.2 DATE: APR/08/2003 PAGE: 2 OF 3 APPROVED: J.LU CHECKED: Allen Liu DRAWN: L.ZHANG Electrical / Optical Characteristics at TA=25°°°°°C Note: 1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value. Selection Guide Absolute Maximum Ratings at TA=25°°°°°C λ kaep htgnelevaWkaePw olleYthgirBrepuS0 95m nV F V21= λ D htgnelevaWetanimoDw olleYthgirBrepuS8 85m nV F V21= λ∆ 2/1 htdiw-flaHeniLlartcepSw olleYthgirBrepuS8 2m nV F V21= IF tnerruCdrawroFw olleYthgirBrepuS5 .81A mV F V21= IR tnerruCesreveRw olleYthgirBrepuS0 1A uV R V5= retemaraPr etemaraP retemaraP retemaraPr etemaraP wolleYthgirBrepuSw olleYthgirBrepuS wolleYthgirBrepuS wolleYthgirBrepuSw olleYthgirBrepuSs tinUs tinU stinU stinUs tinU noitapissidrewoP 003W m egatloVdrawroF 41V egatloVesreveR 5V erutarepmeTgnitarepO 04- ° 07+oTC °C erutarepmeTegarotS 04- ° 58+oTC °C )dcm(vI) dcm(vI )dcm(vI )dcm(vI) dcm(vI V21=V gniweiVg niweiV gniweiV gniweiVg niweiV elgnA P-V21-CYS150FLB) PlAaGnI(WOLLEYTHGIRBREPUSR AELCRETAW0 810 04° 03
SPEC NO: DSAB3170 REV NO: V.2 DATE: APR/08/2003 PAGE: 3 OF 3 APPROVED: J.LU CHECKED: Allen Liu DRAWN: L.ZHANG Super Bright Yellow BLF051SYC-12V-P