BLC573

BLC573 NXP | Alldatasheet

Document overview

• Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 14

Technical content

1.1 General description

and medical applications in the HF to 500 MHz band.

1.2 Features

1.3 Applications

Table 1. Production test information during transport and handling.

BLC573_1 © NXP B.V. 2008. All rights reserved. [1] R th(j-c) is measured under RF conditions. Table 2. Pinning Table 3. Ordering information Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Table 5. Thermal characteristics

BLC573_1 © NXP B.V. 2008. All rights reserved. Table 6. DC characteristics Table 7. RF characteristics

BLC573_1 © NXP B.V. 2008. All rights reserved.

6.1 Ruggedness in class-AB operation

7.1 Impedance information

Table 8. Typical impedance Measured ZS and ZL test circuit impedances.

BLC573_1 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 01 — 11 December 2008 5 of 14 NXP Semiconductors BLC573 HF / VHF power LDMOS transistor

7.2 Reliability

TTF (0.1 % failure fraction). (1) Tj = 100°C (2) Tj = 110°C (3) Tj = 120°C (4) Tj = 130°C (5) Tj = 140°C (6) Tj = 150°C (7) Tj = 160°C (8) Tj = 170°C (9) Tj = 180°C (10) Tj = 190°C (11) Tj = 200°C Fig 3. BLC573 electromigration (ID , total device) 001aaj156 102 104 103 105 Y ears Idc (A) 0 201681 24 (10) (11) (7) (8) (9)

BLC573_1 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 01 — 11 December 2008 6 of 14 NXP Semiconductors BLC573 HF / VHF power LDMOS transistor 8. Test information

8.1 RF performance

The following figures are measured in a class-AB production test circuit. 8.1.1 1-Tone CW VDS = 50 V; IDq = 900 mA; f = 225 MHz. V DS = 50 V; f = 225 MHz. (1) IDq = 500 mA (2) IDq = 700 mA (3) IDq = 900 mA (4) IDq = 1100 mA (5) IDq = 1300 mA (6) IDq = 1500 mA (7) IDq = 1700 mA Fig 4. Power gain and drain efficiency as functions of load power; typical values Fig 5. Power gain as function of load power; typical values PL (W) 0 400 300100 200 001aaj157 G p (dB) hD (%) G p hD PL (W) 0 400 300100 200 001aaj158 G p (dB) (7) (6) (5) (1) (2) (3) (4)

BLC573_1 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 01 — 11 December 2008 7 of 14 NXP Semiconductors BLC573 HF / VHF power LDMOS transistor VDS = 50 V; IDq = 900 mA; f = 225 MHz. (1) PL(1dB) = 55.2 dBm (331 W) (2) PL(3dB) = 55.8 dBm (380 W) Fig 6. Load power as function of input power; typical values Pi (dBm) 24 34 3228 3026 001aaj159 PL (dBm) ideal PL PL (1) (2)

BLC573_1 © NXP B.V. 2008. All rights reserved.

8.2 Test circuit

Table 9. List of components For production test circuit, seeFigure9 andFigure10.

BLC573_1 © NXP B.V. 2008. All rights reserved. [1] American Technical Ceramics type 100B or capacitor of same quality. [2] American Technical Ceramics type 180R or capacitor of same quality. For production test circuit, seeFigure9 andFigure10.

50 WC1

BLC573_1 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 01 — 11 December 2008 10 of 14 NXP Semiconductors BLC573 HF / VHF power LDMOS transistor Fig 10. Component layout for class-AB production test circuit 001aaj163 29 mm 12.2 mm 16 mm 28 mm 76 mm C3 C6 C13 C15 C14 C12 C17 C18 C19 C20 C16 C5C4 R1 L1 C10 C11 Use isolated washer

BLC573_1 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 01 — 11 December 2008 11 of 14 NXP Semiconductors BLC573 HF / VHF power LDMOS transistor 9. Package outline Fig 11. Package outline SOT895A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOT895A SOT895A 06-02-21 06-04-03 DIMENSIONS (mm are the original dimensions) Plastic flanged cavity package; 2 mounting slots; 2 leads 0 5 10 mm scale UNIT A mm Db 12.83 12.57 0.17 0.14 19.9 19.7 9.78 9.53 19.94 18.92 9.98 9.65 4.1 3.3 c U 2 0.6 w 2F 1.14 0.89 U 1 34.16 33.91 L 5.3 4.5 p 3.38 3.12 EE 1 9.53 9.27 inches 0.505 0.495 0.0065 0.0055 0.785 0.775 D 1 20.42 20.12 0.804 0.792 0.385 0.375 0.785 0.745 0.392 0.380 0.161 0.130 0.023 0.25 w 1 0.01 27.94 1.1000.045 0.035 1.345 1.335 0.209 0.177 0.133 0.123 Q 1.75 1.50 0.069 0.059 q 0.375 0.365 H A D 1 D F B C A q A Bw1 M M M Cw2 M M U 1 L pU 2H b EE1 Q c

BLC573_1 © NXP B.V. 2008. All rights reserved.

10.1 Moisture sensitivity

Table 10. Moisture sensitivity level Table 11. Abbreviations Table 12. Revision history

BLC573_1 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 01 — 11 December 2008 13 of 14 NXP Semiconductors BLC573 HF / VHF power LDMOS transistor 13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet —A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes —NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use —NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications —Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values —Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale —NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license —Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data —The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

HF / VHF power LDMOS transistor © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 December 2008 Document identifier: BLC573_1 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 15. Contents