BLA6H1011-600 NXP | Alldatasheet
Document overview
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Technical content
1.1 General description
600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the
1.2 Features and benefits
Table 1. Test information during transport and handling.
1.3 Applications
1030 MHz to 1090 MHz frequency range
Table 2. Pinning Table 3. Ordering information Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Table 5. Thermal characteristics
6.1 Ruggedness in class-AB operation
Table 6. DC characteristics Tj = 25 °C; per section unless otherwise specified. Table 7. RF characteristics Tcase =2 5 °C; unless otherwise specified, in a class-AB production test circuit.
7.1 Impedance information
7.2 Performance curves
Table 8. Typical impedance Typical values per section unless otherwise specified.
Product data sheet Rev. 01 — 22 April 2010 5 of 13 NXP Semiconductors BLA6H1011-600 LDMOS avionics power transistor Th = 25 °C; PL = 600 W; VDS =4 8V ; IDq = 100 mA; tp =5 0 μs; δ =2% . Th = 25 °C; VDS =4 8V ; IDq = 100 mA; tp = 50 μs; δ =2% . (1) f = 1030 MHz (2) f = 1090 MHz Fig 4. Input return loss as a function of frequency; typical values Fig 5. Load power as a function of input power; typical values f (MHz) 109510751035 1085 106510451025 1055 001aal834 RLin (dB) 001aal835 Pi (W) 01 8 126 400 200 600 800 PL (W) (1) (2) Th = 65 °C; VDS =4 8V ; IDq = 100 mA; tp = 50 μs; δ =2% . (1) f = 1030 MHz (2) f = 1090 MHz T h = 65 °C; VDS =4 8V ; IDq = 100 mA; tp = 50 μs; δ =2% . (1) f = 1030 MHz (2) f = 1090 MHz Fig 6. Power gain as a function of load power; typical values Fig 7. Drain efficiency as a function of load power; typical values PL (W) 0 800 600200 400 001aal836 Gp (dB) (1) (2) PL (W) 0 800 600200 400 001aal837 ηD (%) (1) (2)
Product data sheet Rev. 01 — 22 April 2010 6 of 13 NXP Semiconductors BLA6H1011-600 LDMOS avionics power transistor
7.3 Curves measured under Mo de-S ELM pulse-conditions
Th = 65 °C; VDS =4 8V ; IDq = 100 mA; tp = 50 μs; δ =2% . (1) f = 1030 MHz (2) f = 1090 MHz Fig 8. Load power as a function of input power; typical values Pi (W) 02 0 1681 24 001aal838 400 200 600 800 PL (W) (1) (2) f = 1030 MHz; IDq = 100 mA. (1) T h = −40 °C (2) T h = +25 °C (3) T h = +65 °C f = 1030 MHz; IDq =1 0 0m A . (1) T h = 25 °C (2) T h = 65 °C Fig 9. Power gain as a function of load power; typical values Fig 10. Drain efficiency as a function of load power; typical values PL (W) 0 800 600200 400 001aal839 Gp (dB) (1) (2) (3) PL (W) 0 800 600200 400 001aal840 ηD (%) (1) (2)
[1] American Technical Ce ramics type 800B or capacitor of same quality. [2] American Technical Ce ramics type 100B or capacitor of same quality. [3] American Technical Ce ramics type 200B or capacitor of same quality. Table 9. List of components For test circuit see Figure 12.
Product data sheet Rev. 01 — 22 April 2010 8 of 13 NXP Semiconductors BLA6H1011-600 LDMOS avionics power transistor Printed-Circuit Board (PCB): Duroid 6006; εr = 6.15 F/m; thickness = 0.64 mm; thickness copper plating = 35 μm. See Table 9 for a list of components. Fig 12. Component layout for class-AB production test circuit 001aal842 C5 C6 C10 C8 R3 C11
Product data sheet Rev. 01 — 22 April 2010 9 of 13 NXP Semiconductors BLA6H1011-600 LDMOS avionics power transistor 9. Package outline Fig 13. Package outline SOT539A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT539A 10-02-02 00-03-03 0 5 10 mm scale p A F b e D L H Q c E A w1 ABM M M q C B M Mw2 C Mw3 UNIT A mm Db 11.81 11.56 0.18 0.10 31.55 30.94 13.72 9.53 9.27 17.12 16.10 10.29 10.03 4.7 4.2 c e U2 0.250.25 0.51 35.56 qw 2w1F 1.75 1.50 41.28 41.02 25.53 25.27 p 3.30 3.05 Q 2.26 2.01 EE 1 9.50 9.30 inches 0.465 0.455 0.007 0.004 1.242 1.218 31.52 30.96 1.241 1.219 0.540 0.375 0.365 0.674 0.634 0.405 0.395 0.185 0.059 1.625 1.615 1.005 0.995 0.130 0.120 0.089 0.079 0.374 0.366 H 3.48 2.97 0.137 0.117 L DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
Table 10. Abbreviations Table 11. Revision history
Product data sheet Rev. 01 — 22 April 2010 11 of 13 NXP Semiconductors BLA6H1011-600 LDMOS avionics power transistor 12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This docu ment contains the product specification.
Product data sheet Rev. 01 — 22 April 2010 12 of 13 NXP Semiconductors BLA6H1011-600 LDMOS avionics power transistor product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLA6H1011-600 LDMOS avionics power transistor © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 22 April 2010 Document identifier: BLA6H1011-600_1 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 14. Contents