BLA6H0912-500 NXP | Alldatasheet
Document overview
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Technical content
1.1 General description
500 W LDMOS power transistor intended for avionics transmitter applications in the
960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.
1.2 Features and benefits
Table 1. Test information during transport and handling.
1.3 Applications
Table 2. Pinning Table 3. Ordering information Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Table 5. Thermal characteristics
6.1 Ruggedness in class-AB operation
Table 6. DC characteristics Tj = 25 °C unless otherwise specified. Table 7. RF characteristics
7.1 Impedance information
Table 8. Typical impedance Typical values per section unless otherwise specified.
7.2 Application circuit
[1] American Technical Ce ramics type 100B or capacitor of same quality. [2] American Technical Ce ramics type 800B or capacitor of same quality. Printed-Circuit Board (PCB) material: Duroid 6006 with εr = 6.15 and thickness = 0.64 mm. See Table 9 for list of components. Table 9. List of components See Figure 2 for component layout.
Product data sheet Rev. 03 — 30 March 2010 6 of 14 NXP Semiconductors BLA6H0912-500 LDMOS avionics radar power transistor 8. Test information
8.1 Performance curves
VDS =5 0V ; IDq = 100 mA; tp = 128 μs; δ = 10 %. (1) f = 960 MHz (2) f = 1030 MHz (3) f = 1090 MHz (4) f = 1140 MHz (5) f = 1215 MHz V DS =5 0V ; IDq = 100 mA; tp = 128 μs; δ = 10 %. (1) f = 960 MHz (2) f = 1030 MHz (3) f = 1090 MHz (4) f = 1140 MHz (5) f = 1215 MHz Fig 3. Load power as a function of input power; typical values Fig 4. Power gain as a function of load power; typical values Pi (W) 01 8 126 001aal600 200 400 600 P L (W) (1) (2) (3) (4) (5) 001aal601 PL (W) 0 600 400200 Gp (dB) (1) (2) (3) (4) (5)
Product data sheet Rev. 03 — 30 March 2010 7 of 14 NXP Semiconductors BLA6H0912-500 LDMOS avionics radar power transistor VDS =5 0V ; IDq = 100 mA; tp = 128 μs; δ = 10 %. (1) f = 960 MHz (2) f = 1030 MHz (3) f = 1090 MHz (4) f = 1140 MHz (5) f = 1215 MHz V DS =5 0V ; IDq = 100 mA; tp = 128 μs; δ = 10 %. Fig 5. Drain efficiency as a function of load power; typical values Fig 6. Power gain and drain efficiency as function of frequency; typical values PL (W) 0 600 400200 001aal60270 ηD (%) (1) (2) (3) (4) (5) 001aal603 f (MHz) 950 1250 11501050 Gp (dB) ηD (%) Gp ηD PL = 500 W; VDS =5 0V ; IDq = 100 mA; tp = 128 μs; δ = 10 %. Fig 7. Input return loss as a function of frequency; typical values 001aal604 f (MHz) 950 1250 11501050 RLin (dB)
Product data sheet Rev. 03 — 30 March 2010 8 of 14 NXP Semiconductors BLA6H0912-500 LDMOS avionics radar power transistor
8.2 Curves measured under Mo de-S ELM pulse-conditions
f = 1030 MHz; VDS =5 0V ; IDq = 100 mA. (1) T h = 25 °C (2) T h = 65 °C f = 1030 MHz; VDS =5 0V ; IDq = 100 mA. (1) T h = 25 °C (2) T h = 65 °C Fig 8. Load Power as a function of input power; typical values Fig 9. Power gain as a function of load power; typical values Pi (W) 02 0 1681 24 001aal605 200 400 600 PL (W) (2) (1) 001aal606 PL (W) 0 600 400200 Gp (dB) (2) (1) f = 1030 MHz; VDS =5 0V ; IDq = 100 mA. (1) T h = 25 °C (2) T h = 65 °C Fig 10. Drain efficiency as function of load power; typical values PL (W) 0 600 400200 001aal607 η D (%) (2) (1)
Product data sheet Rev. 03 — 30 March 2010 9 of 14 NXP Semiconductors BLA6H0912-500 LDMOS avionics radar power transistor
8.3 Curves measured under Mode-S interrogator pulse-conditions
f = 1030 MHz; VDS =5 0V ; IDq = 100 mA. (1) T h = 25 °C (2) T h = 65 °C f = 1030 MHz; VDS =5 0V ; IDq = 100 mA. (1) T h = 25 °C (2) T h = 65 °C Fig 11. Load Power as a function of input power; typical values Fig 12. Power gain as a function of load power; typical values Pi (W) 02 0 1681 24 001aal608 200 400 600 PL (W) (2) (1) 001aal609 PL (W) 0 600 400200 Gp (dB) (2) (1) f = 1030 MHz; VDS =5 0V ; IDq = 100 mA. (1) T h = 25 °C (2) T h = 65 °C Fig 13. Drain efficiency as function of load power; typical values 001aal610 PL (W) 0 600 400200 ηD (%) (2) (1)
Product data sheet Rev. 03 — 30 March 2010 10 of 14 NXP Semiconductors BLA6H0912-500 LDMOS avionics radar power transistor 9. Package outline Fig 14. Package outline SOT634A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOT634A 01-11-27 03-05-01 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 2 leads SOT634 A D A L L EE1p b Q F c M MC C A q B w1 ABM M M UNIT QcD E 1E FL p q mm 0.15 0.08 b 12.82 12.57 13.34 13.08 22.56 22.15 1.14 0.89 5.33 4.32 DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) 3.38 3.12 27.94 34.16 33.91 U2U1 13.84 13.59 0.25 w2w1 0.51 A 4.83 3.68 1.70 1.45 inches 0.006 0.003 0.505 0.495 0.525 0.515 13.34 13.08 0.525 0.515 0.888 0.872 22.58 22.12 0.889 0.871 0.045 0.035 0.210 0.170 0.133 0.123 1.100 1.345 1.335 0.545 0.535 0.010 0.0200.190 0.145 0.067 0.057
Table 10. Abbreviations Table 11. Revision history
- Table 7 on page 3: VCC changed into VDS.
- Table 1 on page 1: changed value of PL.
- Table 4 on page 2: changed minimum value of VGS.
- Table 5 on page 2: changed several values.
- Table 6 on page 3: changed several values.
- Table 7 on page 3: changed several values.
- Section 6.1 on page 3: changed several values.
- Table 8 on page 4: changed several values.
- Added Section 7.2 on page 5.
- Added Section 8 on page 6. BLA6H0912-500_2 20100302 Product data sheet - BLA6H0912-500_1 BLA6H0912-500_1 20090305 Objective data sheet - -
Product data sheet Rev. 03 — 30 March 2010 12 of 14 NXP Semiconductors BLA6H0912-500 LDMOS avionics radar power transistor 12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This docu ment contains the product specification.
Product data sheet Rev. 03 — 30 March 2010 13 of 14 NXP Semiconductors BLA6H0912-500 LDMOS avionics radar power transistor product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLA6H0912-500 LDMOS avionics radar power transistor © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 30 March 2010 Document identifier: BLA6H0912-500_3 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 14. Contents