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TISPL758LF3D - INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES PRODUCT INFORMATION 1JANUARY 1998 - REVISED AUGUST 2002 Specifications are subject to change without notice. OVERVOLTAGE PROTECTION FOR LUCENT TECHNOLOGIES LCAS

  • Symmetrical and Asymmetrical Characteristics for Optimum Protection of Lucent L7581/2/3 LCAS
  • Rated for International Surge Wave Shapes
  • Ion-Implanted Breakdown Region Precise And Stable Voltage Low Voltage Overshoot Under Surge
  • Planar Passivated Junctions Low Off-State Current<±10µA
  • Small Outline Surface Mount Package - Available Ordering Options

description

The TISPL758LF3 is an integrated combination of a symmetrical bidirectional overvoltage protector and an asymmetrical bidirectional overvoltage protector. It is designed to limit the peak voltages on the line terminals of the Lucent Technologies L7581/2/3 LCAS (Line Card Access Switches). An LCAS may also be referred to as a Solid State Relay, SSR, i.e. a replacement of the conventional electro- mechanical relay. The TISPL758LF3D voltages are chosen to give adequate LCAS protection for all switch conditions. The most potentially stressful TERMINAL PAIR VDRM V V(BO) V T-G (SYMMETRICAL) ±105 ±130 R-G (ASYMMETRICAL) +105, -180 +130, -220 CUSTOMISED VERSIONS AVAILABLE WAVE SHAPE STANDARD ITSP A 2/10µs GR-1089-CORE 175 8/20µs ANSI C62.41 120 10/160µs FCC Part 68 60 10/700µs ITU-T K20/21 50 10/560µs FCC Part 68 45 10/1000µs GR-1089-CORE 35 CARRIER ORDER # Tube TISPL758LF3D Taped and reeled TISPL758LF3DR condition is low level power cross when the LCAS switches are closed. Under this condition, the TISPL758LF3D limits the voltage and corresponding LCAS dissipation until the LCAS thermal trip operates and opens the switches. Under open-circuit ringing conditions, the line ring (R) conductor will have high peak voltages. For battery backed ringing, the ring conductor will have a larger peak negative voltage than positive i.e. the peak voltages are asymmetric. An overvoltage protector with a similar voltage asymmetry will give the most effective protection. On a connected line, the tip (T) conductor will have much smaller voltage levels than the open- circuit ring conductor values. Here a symmetrical voltage protector gives adequate protection. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. These overvoltages are initially clipped by protector breakdown clamping until the voltage rises to the breakover level, which causes the device symbol MDXXAE D PACKAGE (TOP VIEW) 4 5 8 G G G G NC T R NC NC - No internal connection G T R SD3XAA Terminals T, R and G correspond to the alternative line designators of A, B and C Support from the Microelectronics Group of Lucent Technologies Inc. is gratefully acknowledged in the definition of the TISPL758LF3D voltage levels and for performing TISPL758LF3D evaluations.

TISPL758LF3D - INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES PRODUCT INFORMATION JANUARY 1998 - REVISED AUGUST 2002 Specifications are subject to change without notice. device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. For negative surges, the high crowbar holding current prevents d.c. latchup with the SLIC current, as the surge current subsides. The TISPL758LF3 is guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are supplied in a small-outline surface mount (D) plastic package. The difference between the TISPL758LF3D and TISPL758LF3DR versions is shown in the ordering information. absolute maximum ratings, TA = 25°C (unless otherwise noted) RATING SYMBOL VALUE UNIT Repetitive peak off-state voltage R-G terminals T-G terminals VDRM -180, +105 -105, +105 V Non-repetitive peak on-state pulse current(see Notes 1, 2 and 3) ITSP A 2/10µs(GR-1089-CORE, 2/10µs voltage wave shape) 175 8/20µs(ANSI C62.41, 1.2/50µs voltage wave shape) 120 10/160µs(FCC Part 68, 10/160µs voltage wave shape) 60 5/200µs(VDE 0433, 2.0kV, 10/700µs voltage wave shape) 50 0.2/310µs(I3124, 2.0kV, 0.5/700µs voltage wave shape) 50 5/310µs(ITU-T K20/21, 2.0kV, 10/700µs voltage wave shape) 50 5/310µs(FTZ R12, 2.0kV, 10/700µs voltage wave shape) 50 10/560µs(FCC Part 68, 10/560µs voltage wave shape) 45 10/1000µs(GR-1089-CORE, 10/1000µs voltage wave shape) 35 Non-repetitive peak on-state current(see Notes 1, 2 and 3) ITSM

20 Afull sine wave 50Hz

Repetitive peak on-state current, 50/60Hz, (see Notes 2 and 3) ITSM 2x1 A Initial rate of rise of on-state current,Exponential current ramp, Maximum ramp value <70 A diT/dt 150 A/µs Junction temperature TJ -40 to +150 °C Storage temperature range Tstg -40 to +150 °C NOTES: 1. Above the maximum specified temperature, derate linearly to zero at 150°C lead temperature. 2. Initially the TISPL758LF3 must be in thermal equilibrium with 0°C<T J <70°C. 3. The surge may be repeated after the TISPL758LF3 returns to its initial conditions. recommended operating conditions MIN TYP MAX UNIT R1 Series Resistor for GR-1089-CORE first-level surge, operational pass (4.5.7) 20 Ω Series Resistor for FCC Part 68 10/160 non-operational pass 10/160 operational pass 10/560 non-operational pass 10/560 operational pass Ω R1 Series Resistor for ITU-T K20/21 10/700, < 2kV, operational pass 10/700, 4kV, operational pass 40 Ω

TISPL758LF3D - INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES PRODUCT INFORMATION JANUARY 1998 - REVISED AUGUST 2002 Specifications are subject to change without notice. NOTES: 4. Positive and negative values of VDRM are not equal. See ratings table 5. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is connected to the guard terminal of the bridge. electrical characteristics for the T-G and R-G terminal pairs, T J = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS VALUE UNITMIN TYP MAX IDRM Repetitive peak off- state current VD =±V DRM, (See Note 4) ±10 µA V(BO) Breakover voltage dv/dt=±250V/ms,R SOURCE =300 Ω R-G terminals T-G terminals -220 -130 +130 +130 V V(BO) Impulse breakover volt- age Rated impulse conditions with operational pass series resistor R-G terminals T-G terminals -240 -140 +140 +140 V IH Holding current di/dt=-30 mA/ms di/dt=+30 mA/ms +100 -150 mA ID Off-state current 0 < VD < ±50V, T J = 85°C ±10 µA CTG Off-state capacitance f=100kHz,V d =1V rms VTG =-5V, (See Note 5) 18 36 pF CRG Off-state capacitance f=100kHz,V d =1V rms VTG =-50V, (See Note 5) 10 20 pF thermal characteristics PARAMETER MIN TYP MAX UNIT RθJA Junction to free air thermal resistance 160 °C/W

Specifications are subject to change without notice. Figure 3. Figure 4. Figure 5. Figure 6.

100 TC3MAG

1.2 TC3MAJA

1.3 TC3MAC

Specifications are subject to change without notice. Figure 7. LCAS PROTECTION WITH A TISPL758LF3D

TISPL758LF3D - INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES PRODUCT INFORMATION JANUARY 1998 - REVISED AUGUST 2002 Specifications are subject to change without notice. MECHANICAL DATA D008 plastic small-outline package This small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. 5,21 (0.205) 4,60 (0.181) NOTES: A. Leads are within 0,25 (0.010) radius of true position at maximum material condition. B. Body dimensions do not include mold flash or protrusion. C. Mold flash or protrusion shall not exceed 0,15 (0.006). D. Lead tips to be planar within ±0,051 (0.002). 1,75 (0.069) 1,35 (0.053) 6,20 (0.244) 5,80 (0.228) 5,00 (0.197) 4,80 (0.189) D008 8 7 6 5 4321 4,00 (0.157) 3,81 (0.150) 7° NOM

3 Places

7° NOM

4 Places

0,51 (0.020) 0,36 (0.014)

8 Places

1,27 (0.050) (see Note A)

6 Places

1,12 (0.044) 0,51 (0.020) 4° ± 4° 0,79 (0.031) 0,28 (0.011) 0,203 (0.008) 0,102 (0.004) ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES 8-pin Small Outline Microelectronic Standard Package MS-012, JEDEC Publication 95 0,50 (0.020) 0,25 (0.010) x 45°NOM 0,229 (0.0090) 0,190 (0.0075) MDXXAAC INDEX

TISPL758LF3D - INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES PRODUCT INFORMATION JANUARY 1998 - REVISED AUGUST 2002 Specifications are subject to change without notice. MECHANICAL DATA D008 tape dimensions ALL LINEAR DIMENSIONS IN MILLIMETERS 6,30 6,50 11,70 12,305,45 5,55 1,50 1,60 3,90 4,10 7,95 8,05 1,95 2,05 0,8 MIN. 0 MIN. 0,40 2,0 2,2Direction of Feed ø 1,5 MIN. Carrier Tape Embossment Cover Tape MDXXATNOTES: A. Taped devices are supplied on a reel of the following dimensions:- Reel diameter: 330 +0,0/-4,0 mm Reel hub diameter: 100 ±2,0 mm Reel axial hole: 13,0 ±0,2 mm B. 2500 devices are on a reel.