BL3415

BL3415 GALAXY-MICRO | Alldatasheet

Document overview

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Technical content

Dual P-Channel Enhancement Mode Field Effect Transistor BL3415 C 2 7 6 www.gmesemi.com R e v . A 1

FEATURES

 Electrostatic Sensitive Devices.  V DS (V) = -20V  I D =-4 A  R DS(ON) < 50mΩ (VGS = -4.5V) RDS(ON) < 70mΩ (VGS = -2.5V) RDS(ON) < 100mΩ (VGS = -1.8V)

APPLICATIONS

 P-channel enhancement m ode effect transistor.  S w i t c h i n g a p p l i c a t i o n . SOT-23

ORDERING INFORMATION

T y p e N o . M a r k i n g P a c k a g e C o d e BL3415 3415 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source voltage -20 V VGSS Gate -Source voltage ±8 V ID Continuous Drain CurrentA @ TA = 25 ℃ @ TA = 70 ℃ -4.0 -3.5 A IDM Pulsed Drain Current a -30 A PD P o w e r D i s s i p a t i o n @ TA = 25 ℃ @ TA = 70 ℃ 1.4 0.9 W RθJA Thermal resistance,Junction-to-Ambient 90 ℃/W TJ, Tstg Junction and Storage Temperature -55 to +150 ℃ Pb Lead-free

Dual P-Channel Enhancement Mode Field Effect Transistor BL3415 C 2 7 6 www.gmesemi.com R e v . A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT STATIC PARAMETERS Drain-Source Breakdown Voltage BV DSS VGS=0V,ID=-250μA -20 - - V Zero Gate Voltage Drain Current I DSS VDS=-20 VGS=0V - - -1 μA Gate-body Leakage I GSS VDS=0V, VGS=±4.5V VDS=0V, VGS=±8V - - ±1 ±10 uA Gate Threshold Voltage V GS(th) VDS=VGS, ID=-250μA -0.3 -0.55 -1 V On state drain current IDON) VDS=-5V,VGS=-4.5V -25 - - A Static drain-Source on-resistance R DS(ON) VGS=-4.5V,ID=-4A VGS=-2.5V,ID=-4A VGS=-1.8V,ID=-2A 100 mΩ Forward Transconductance gFS V DS=-5V,ID=-4A 8 16 - S Drain-Source diode forward voltage V SD VGS=0V,Is=-1A - -0.78 -1 V Maximum Body-Diode Continuous Current I S - - -2.2 A DYNAMIC CHARACTERISTICSC Input capacitance C ISS VDS=-10V,VGS=0V,f=1.0MHz - 1450 - pF Output capacitance C OSS - 205 - Reverse transfer capacitance C RSS - 160 - Gate resistance Rg V DS=0V,VGS=0V,f=1.0MHz 6.5 Ω SWITCHING CHARACTERISTICSC Turn-On Delay Time t D(ON) VDS = -10V, RL = 2.5Ω, VGS= -4.5V, RGEN= 3Ω - 9.5 - ns Rise Time tr - 17 - ns Turn-Off Delay Time t D(OFF) - 94 - ns Fall Time tf - 35 - ns Total Gate Charge Qg VDS = -10V ID= -4A VGS= -4.5V, - 17.2 - nC Gate-Source Charge Qgs - 1.3 - nC Gate-Drain Charge Qgd - 4.5 - nC Body Diode Reverse Recovery Time trr IF=-4A, dI/dt=100A/μs - 31 - nS Body Diode Reverse Recovery Charge Qrr IF=-4A, dI/dt=100A/μs - 13.8 - nC

Dual P-Channel Enhancement Mode Field Effect Transistor BL3415 C 2 7 6 www.gmesemi.com R e v . A 3 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Dual P-Channel Enhancement Mode Field Effect Transistor BL3415 C 2 7 6 www.gmesemi.com R e v . A 4

Dual P-Channel Enhancement Mode Field Effect Transistor BL3415 C 2 7 6 www.gmesemi.com R e v . A 5

Dual P-Channel Enhancement Mode Field Effect Transistor BL3415 C 2 7 6 www.gmesemi.com R e v . A 6 PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOLDERING FOOTPRINT Unit : mm

PACKAGE INFORMATION

A 2.70 3.10 B 1.10 1.50 C 1.0 Typical D 0.4 Typical E 0.35 0.48 G 1.80 2.00 H 0.02 0.1 J 0.1 Typical K 2.20 2.60 All Dimensions in mm Device Package Shipping BL3415 SOT-23 3000/Tape&Reel A B C D E J H K G 0.90 0.80 2.00 0.95 0.95