BL0202C SANKEN | Alldatasheet
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Technical content
Datasheet sections
- 8.1 Startup Operation（BL0200C） --------------------------------------------
- 8.2 Startup Operation（BL0202B, BL0202C） ------------------------------
- 8.3 Constant Current Control Operation -----------------------------------
- 8.4 PWM Dimming Function --------------------------------------------------
- 8.5 Gate Drive ---------------------------------------------------------------------
- 8.6 Error Signal Output Function (BL0200C) -----------------------------
- 8.7 Protection Function ---------------------------------------------------------
- 9.1 Peripheral Components ----------------------------------------------------
- 9.2 Inductor Design Parameters-----------------------------------------------
- 9.3 PCD Trace Layout and Component Placement -----------------------
- 10.1 BL0200C -----------------------------------------------------------------------
- 10.2 BL0202B -----------------------------------------------------------------------
For LED Backlight 2ch LED Driver IC BL0200 Series BL0200-DS Rev.2.1 SANKEN ELECTRIC CO.,LTD. 1 Feb. 25, 2014 General Descriptions BL0200 series are 2ch output LED driver IC for LED backlight, and it can do dimming to 0.02 % by external PWM signal. This IC realizes a high efficiency by the boost convertor control that absorbs variability on VF. The product easily achieves high cost -performance LED drive system with few external components and enhanced protection functions. Features and Benefit Boost convertor
- Current-Mode type PWM Control
- PWM frequency is 100 kHz or 200 kHz
- Maximum On Duty is 90 % LED current control
- Individual PWM Dimming Control
- Analog Dimming
- High contrast ratio is 1 / 5000
- Accuracy of Reg output voltage is ± 1.5 % or ± 2 % Protection functions
- Enable Function of IC (BL0202B, BL0202C)
- Error Signal Output (BL0200C)
- Overcurrent Protection for Boost Circuit (OCP)
- Overcurrent Protection for LED Output (LED_OCP) Typical Application Circuit VCC VREF PWM1 ER REG COMP1 COMP2 GND DRV1 OC1 OVP SW1 IFB1 BL0200C PWM2 DRV2 OC2 SW2 IFB2 Package SOP18 Not to scale Lineup Products Frequency VREG Accuracy Built-in Function BL0202C 200 kHz ± 1.5 % Enable Function of IC BL0202B 100 kHz BL0200C 200 kHz ± 2 % Error Signal Output
Applications
- LED backlights
- LED lighting etc. VCC VREF PWM1 EN REG COMP1 COMP2 GND DRV1 OC1 OVP SW1 IFB1 BL0202B/C PWM2 DRV2 OC2 SW2 IFB2
BL0200-DS Rev.2.1 SANKEN ELECTRIC CO.,LTD. 3 Feb. 25, 2014 1. Absolute Maximum Ratings The polarity value for current specifies a sink as "+," and a source as "−," referencing the IC. Unless otherwise specified, TA is 25 °C Parameter Symbol Test Conditions Pins Rating Unit Notes REG Pin Source Current IREG 1 – 9 − 1 mA OVP Pin Voltage VOVP 2 – 9 − 0.3 to 5 V PWM1 Pin Voltage VPWM1 3 – 9 − 0.3 to 5 V IFB1 Pin Clamp Current IFB1 Single pulse 5 µs 5 – 9 − 10 mA OC1 Pin Voltage VOC1 6 – 9 − 0.3 to 5 V DRV1 Pin Voltage VDRV1 7 – 9 − 0.3 to VCC + 0.3 V SW1 Pin Voltage VSW1 8 – 9 − 0.3 to VCC + 0.3 V VCC Pin Voltage VCC 10 – 9 − 0.3 to 20 V SW2 Pin Voltage VSW2 11 – 9 − 0.3 to VCC + 0.3 V DRV2 Pin Voltage VDRV2 12 – 9 − 0.3 to VCC + 0.3 V OC2 Pin Voltage VOC2 13 – 9 − 0.3 to 5 V IFB2 Pin Clamp Current IFB2 Single pulse 5 µs 14 – 9 − 10 mA PWM2 Pin Voltage VPWM2 16 – 9 − 0.3 to 5 V EN Pin Voltage VEN 17 – 9 − 0.3 to 5 V BL0202B BL0202C ER Pin Voltage VER 17 – 9 − 0.3 to VREG V BL0200C VREF Pin Voltage VREF 18 – 9 − 0.3 to 5 V Operating Ambient Temperature Top − − 40 to 85 °C Storage Temperature Tstg − − 40 to 125 °C Junction Temperature Tj − 150 °C
BL0200-DS Rev.2.1 SANKEN ELECTRIC CO.,LTD. 4 Feb. 25, 2014 2. Electrical characteristics The polarity value for current specifies a sink as "+," and a source as "−," referencing the IC. Unless otherwise specified, TA is 25 °C, VCC = 12 V Parameter Symbol Test Conditions Pins Min. Typ. Max. Unit Notes Start / Stop Operation Operation Start Voltage* VCC(ON) 10 – 9 8.5 9.6 10.5 V Operation Stop Voltage VCC(OFF) 10 – 9 7.8 8.6 9.2 V BL0202B BL0202C 8.0 9.1 10.0 BL0200C Circuit Current in Operation ICC(ON) 10 – 9 − 5.3 8.0 mA Circuit Current in Non-Operation ICC(OFF) VCC = 7.5 V 10 – 9 − 70 200 µA REG Pin Output Voltage VREG 1 – 9 4.925 5.000 5.075 V BL0202B BL0202C 4.9 5.0 5.1 BL0200C Oscillation PWM Operation Frequency fPWM1 fPWM2 7 – 9 12 – 9 95 100 105 kHz BL0202B 190 200 210 BL0200C BL0202C Maximum ON Duty DMAX1 DMAX2 7 – 9 12 – 9 85 90 95 % Minimum ON Time tMIN1 tMIN2 7 – 9 12 – 9 200 310 400 ns COMP Pin Voltage at Oscillation Start VCOMP1(ON) VCOMP2(ON) 4 – 9 15 – 9 0.35 0.50 0.65 V COMP Pin Voltage at Oscillation Stop VCOMP1(OFF) VCOMP2(OFF) 4 – 9 15 – 9 0.10 0.25 0.40 V VREF / IFB Pin VREF Pin Minimum Setting Voltage VREF(MIN) VREF = 0 V 18 – 9 0.05 0.25 0.45 V VREF Pin Maximum Setting Voltage VREF(MAX) VREF = 5 V 18 – 9 1.75 2.00 2.35 V IFB Pin Voltage at COMP Charge Switching VIFB1(COMP1) VIFB2(COMP2) VREF = 1 V 5 – 9 14 – 9 0.55 0.60 0.65 V IFB Pin Overcurrent Protection High Threshold Voltage VIFB1(OCH) VIFB2(OCH) 5 – 9 14 – 9 3.8 4.0 4.2 V IFB Pin Overcurrent Protection Low Threshold Voltage VIFB1(OCL) VIFB2(OCL) VREF = 1 V 5 – 9 14 – 9 1.9 2.0 2.1 V IFB Pin Overcurrent Protection Release Threshold Voltage VIFB1(OCL-OFF) VIFB2(OCL-OFF) VREF = 1 V 5 – 9 14 – 9 1.5 1.6 1.7 V IFB Pin Voltage at Auto Restart Operation VIFB1(AR) VIFB2(AR) VREF = 1 V 5 – 9 14 – 9 0.45 0.50 0.55 V IFB Pin Bias Current IIFB1(B) IIFB2(B) VIFB1 = 5 V VIFB2 = 5 V 5 – 9 14 – 9 − − 1 µA Current Detection Threshold Voltage VIFB1 VIFB2 VREF = 1 V 5 – 9 14 – 9 0.98 1.00 1.02 V BL0202B BL0202C 0.985 1.000 1.015 BL0200C COMP Pin COMP Pin Maximum Output Voltage VCOMP1(MAX) VCOMP2(MAX) VIFB1 = 0.7 V VIFB2 = 0.7 V 4 – 9 15 – 9 4.8 5.0 − V * VCC(ON) > VCC(OFF)
BL0200-DS Rev.2.1 SANKEN ELECTRIC CO.,LTD. 5 Feb. 25, 2014 Parameter Symbol Test Conditions Pins Min. Typ. Max. Unit Notes COMP Pin Minimum Output Voltage VCOMP1(MIN) VCOMP2(MIN) VIFB1 = 2.0 V VIFB2 = 2.0 V 4 – 9 15 – 9 − 0 0.2 V Transconductance gm − − 640 − µS COMP Pin Source Current ICOMP1(SRC) ICOMP2(SRC) VIFB1 = 0.7 V VIFB2 = 0.7 V 4 – 9 15 – 9 −77 −57 −37 µA COMP Pin Sink Current ICOMP1(SNK) ICOMP2(SNK) VIFB1 = 1.5 V VIFB2 = 1.5 V 4 – 9 15 – 9 37 57 77 µA COMP Pin Charge Current at Startup ICOMP1(S) ICOMP2(S) VCOMP1 = 0 V VCOMP2 = 0 V 4 – 9 15 – 9 −19 −11 −3 µA COMP Pin Reset Current ICOMP1(R) ICOMP2(R) 4 – 9 15 – 9 200 360 520 µA EN Pin Operation Start EN Pin Voltage VEN(ON) 17 – 9 1.2 2.0 2.6 V BL0202B BL0202C Operation Stop EN Pin Voltage VEN(OFF) 17 – 9 0.8 1.4 1.8 V EN Pin Sink Current IEN VEN = 3 V 17 – 9 20 55 120 µA ER Pin ER Pin Sink Current during Non-Alarm IER VER = 1 V 17 – 9 2.5 4.4 6.3 mA BL0200C Boost Parts Overcurrent Protection (OCP) OC Pin Overcurrent Protection Threshold Voltage VOCP1 VOCP2 VCOMP1 = VCOMP2 = 4.5 V 6 – 9 13 – 9 0.57 0.60 0.63 V Overvoltage Protection (OVP) OVP Pin Overvoltage Protection Threshold Voltage VOVP 2 – 9 2.85 3.00 3.15 V OVP Pin OVP Release Threshold Voltage VOVP(OFF) 2 – 9 2.60 2.75 2.90 V PWM Pin PWM Pin ON Threshold Voltage VPWM1(ON) VPWM2(ON) 3 – 9 16 – 9 1.4 1.5 1.6 V PWM Pin OFF Threshold Voltage VPWM1(OFF) VPWM2(OFF) 3 – 9 16 – 9 0.9 1.0 1.1 V PWM Pin Impedance RPWM1 RPWM2 3 – 9 16 – 9 100 200 300 kΩ SW / DRV Pin SW Pin Source Current ISW1(SRC) ISW2(SRC) 8 – 9 11 – 9 − −85 − mA SW Pin Sink Current ISW1(SNK) ISW2(SNK) 8 – 9 11 – 9 − 220 − mA DRV Pin Source Current IDRV1(SRC) IDRV2(SRC) 7 – 9 12 – 9 − −0.36 − A DRV Pin Sink Current IDRV1(SNK) IDRV2(SNK) 7 – 9 12 – 9 − 0.85 − A Thermal Shutdown Protection (TSD) Thermal Shutdown Activating Temperature Tj(TSD) − 125 − − °C Hysteresis Temperature of TSD Tj(TSD)HYS − − 65 − °C Thermal Resistance Thermal Resistance from Junction to Ambient θj-A − − − 95 °C/W
BL0200-DS Rev.2.1 SANKEN ELECTRIC CO.,LTD. 6 Feb. 25, 2014 3. Functional Block Diagram BL0202B, BL0202C VCC UVLO REG ON/OFF PWM OSC Main Logic TSD Auto Restart Protection OC1 Control Slope Compensation Feedback2 Control Abnormal Detector Overvoltage Detector PWM1 Pulse Detector REG SW2 DRV1 OC1 OC2 COMP2 IFB2 VREF OVP PWM1 VCC VCC VCC Drive Drive EN PWM2 IFB1 COMP1 GND DRV2 SW1 PWM2 Pulse Detector16 Feedback1 Control5 OC2 Control 13 Drive Drive 12 VCC VCC BL0200C VCC UVLO REG ON/OFF PWM OSC Main Logic TSD Auto Restart Protection OC1 Control Slope Compensation Feedback2 Control Abnormal Detector Overvoltage Detector PWM1 Pulse Detector REG SW2 DRV1 OC1 OC2 COMP2 IFB2 VREF OVP PWM1 VCC VCC VCC Drive Drive PWM2 IFB1 COMP1 GND DRV2 SW1 PWM2 Pulse Detector16 Feedback1 Control5 OC2 Control Drive Drive 12 VCC VCC ER17
BL0200-DS Rev.2.1 SANKEN ELECTRIC CO.,LTD. 7 Feb. 25, 2014 4. Pin List Table REG PWM1 OVP COMP1 OC1 IFB1 DRV1 VREF PWM2 EN / ER COMP2 OC2 IFB2 DRV2 SW1 GND SW2 VCC Number Name Function
1 REG Internal regulator output
2 OVP Overvoltage detection signal input
3 PWM1 PWM dimming signal input (1)
4 COMP1 Phase compensation and soft-start setting (1)
5 IFB1 Feedback signal input of current detection
(1)
6 OC1 Current mode control signal input (1) and
overcurrent protection signal input (1)
7 DRV1 Boost MOSFET gate drive output (1)
8 SW1 Dimming MOSFET gate drive output (1)
9 GND Ground
10 VCC Power supply voltage input
11 SW2 Dimming MOSFET gate drive output (2)
12 DRV2 Boost MOSFET gate drive output (2)
13 OC2 Current mode control signal input (2) and
overcurrent protection signal input (2)
14 IFB2 Feedback signal input of current detection
(2)
15 COMP2 Phase compensation and soft-start setting (2)
16 PWM2 PWM dimming signal input (2)
Enable signal input (BL0202B, BL0202C) Error signal output (BL0200C)
18 VREF Detection voltage setting
BL0200-DS Rev.2.1 SANKEN ELECTRIC CO.,LTD. 8 Feb. 25, 2014 5. Typical Application Circuit P_IN P_GND C21 DRV1 GND LED_OUT2(+) VCC_IN ON/OFF PWM2_IN PWM1_IN S_GND REG1
2 OVP
8 SW1
LED_OUT2(-) LED_OUT1(+) LED_OUT1(-) C22 Figure 5-1 BL0202B and BL0202C Typical Application Circuit P_IN P_GND C21 DRV1 GND LED_OUT2(+) VCC_IN ER_OUT PWM2_IN ON/OFF PWM1_IN S_GND REG1 LED_OUT2(-) LED_OUT1(+) LED_OUT1(-) Figure 5-2 BL0200C Typical Application Circuit
BL0200-DS Rev.2.1 SANKEN ELECTRIC CO.,LTD. 9 Feb. 25, 2014 6. Package Diagram SOP18 7. Marking Diagram Part Number B L 0 2 0 × × S K Y M D Lot Number Y is the last digit of the year (0 to 9) M is the month (1 to 9, O, N or D) D is a period of days (1 to 3) : 1 : 1st to 10th 2 : 11th to 20th 3 : 21st to 31st Sanken Control Number NOTES： 1) Dimension is in millimeters 2) Pb-free. Device composition compliant with the RoHS directive
BL0200-DS Rev.2.1 SANKEN ELECTRIC CO.,LTD. 10 Feb. 25, 2014 8. Functional Description All of the parameter values used in these descriptions are typical values, unless they are specified as minimum or maximum. With regard to current direction, "+" indicates sink current (toward the IC) and " –" indicates source current (from the IC). The IC incorporates two boost converter circuits in one package, and can independently control eac h output current. The operation of control circuit for LED_OUT1 is same operation as the control circuit for LED_OUT2.
8.1 Startup Operation（BL0200C）
Figure 8-1 shows the VCC pin peripheral circuit. The VCC pin is the power supply input for control circuit from the external power supply. When the VCC pin voltage increases to the Operation Start Voltage, VCC(ON) = 9.6 V, the control circuit starts operation. After that, when the PWM pin voltage exceeds the PWM Pin ON Threshold Voltage, V PWM(ON) of 1.5 V (less than absolute maximum voltage of 5 V), the COMP Pin Charge Current at Startup, I COMP(S) = −11 µA, flows from the COMP pin. This charge current flows to capacitors at the COMP pin. When the COMP pin voltage increases to the COMP Pin Voltage at Oscillation Start, V COMP(ON) = 0.50 V or more, the control circuit starts switching operation. As shown in Figure 8-2, when the VCC pin voltage decreases to the Operation Stop Voltage, VCC(OFF) = 9.1 V, the control circuit stops operation, by the UVLO (Undervoltage Lockout) circuit, and reverts to the state before startup. External power supply COMP1 GND PWM110 4 9 C16 C15 R42 VCC Figure 8-1 VCC pin peripheral circuit ICC ICC（ON） VCC（OFF） VCC（ON） VCC Start Stop Figure 8-2 VCC versus ICC When the on -duty of the PWM dimming signal is small, the charge current at the COMP pin is controlled as follows in order to raise the output current quickly at startup. Figure 8-3 shows the operation waveform with the PWM dimming signal at startup. PWM pin Dimming signal COMP pin voltage IFB pin voltage Constant current control COMP pin charge current IC switching status OFF ON VCOMP(ON) VREF pin voltage VIFB(COMP.VR) ICOMP(S) ICOMP(SRC) VCC pin voltage VCC(ON) Figure 8-3 Startup operation during PWM dimming While the IFB pin voltage increases to the IFB Pin Voltage at COMP Charge Switching, V IFB(COMP.VR), a capacitors at the COMP pin are charged by ICOMP(S) = −11 µA. During this period, they are charged by the COMP Pin Source Current, I COMP(SRC) = −57 µA, when the PWM pin voltage is 1.5 V or more. Thus, the COMP pin voltage increases immediately. When the IFB pin voltage increases to V IFB(CMP1.VR) or more, the COMP pin source current is controlled according to the feedback amount, and the output current is controlled to be constant. The on-duty gradually becomes wide according to the
BL0200-DS Rev.2.1 SANKEN ELECTRIC CO.,LTD. 11 Feb. 25, 2014 increase of the COMP pin voltage, and the output power increases (Soft start operation). Thus, power stresses on components are reduced. When the VCC pin voltage decreases to the operation stop voltage or less, or the Auto Restart operation (see the Section 8.7 Protection Function ) after protection is achieved, then the control circuit stops switching operation, and capacitors at the COMP pin are discharged by the COMP Pin Reset Current, ICOMP(R) = 360 µA simultaneously. The soft start operation is achieved at restart. The IC is operated by Auto Restart 1 at startup operation. See the Section 8.7 Protection Function about the caution of startup operation. VIFB(COMP.VR) is determined by the VREF pin voltage, as shown in Figure 8-4. When VREF pin voltage is 1V, the value of VIFB(COMP.VR) becomes 0.60 V. VIFB(COMP.VR) VREF pin voltage 0.15V 1.2V 0.25V 2V1V 0.6V Figure 8-4 VREF pin voltage versus IFB pin voltage at COMP charge switching
8.2 Startup Operation（BL0202B, BL0202C）
BL0202B and BL0202C have Enable Function. Figure 8-5 shows the peripheral circuit of VCC pin and EN pin , Figure 8-6 shows the startup operation waveform. The VCC pin is the power supply input for control circuit from the external power supply. The EN pin is ON/OFF signal input from the external circuit. When the both VCC pin voltage, V CC, and EN pin voltage, V EN, increase to the each operation voltage or more, the control circuit starts operation (VCC ≥ VCC(ON) = 9.6 V and VEN ≥ VEN(ON) = 2.0 V). After that, when the PWM pin voltage exceeds the PWM Pin ON Threshold Voltage, V PWM(ON) of 1.5 V (less than absolute maximum voltage of 5 V), the COMP Pin Charge Current at Startup, I COMP(S) = −11 µA, flows from the COMP pin. This charge current flows to capacitors at the COMP pin. When the COMP pin voltage increases to the COMP Pin Voltage at Oscillation Start, V COMP(ON) = 0.50 V or more, the control circuit starts switching operation. As shown in Figure 8-2, when the EN pin voltage decreases to the Operation Stop Voltage V EN(OFF) = 1.4 V or less, the control circuit stops operation. And w hen the VCC pin voltage decreases to the Operation Stop Voltage, VCC(OFF) = 8.6 V, the control circuit stops operation, by the UVLO (Undervoltage Lockout) circuit, and reverts to the state before startup. The value of R39 connected to EN pin is set as follows; (max)I (max)VV39R EN )ON(ENIN_EN )A(120 )V(6.2V IN_EN (8-1) Where, VEN_IN is EN pin input voltage (less than absolute value of EN pin voltage, 5 V ). V EN(ON)(max) is the maximum rating of EN Pin Operation Start Voltage. IEN(max) is the maximum rating of EN Pin Sink Current. In case V EN_IN = 3.5V, the value of R39 should be set 7.5 kΩ or less. External power supply BL0202B/C COMP1 GND PWM1 4 9 C16 C15 R42 VCC EN5 C22 R39 ON/OFF VEN_IN Figure 8-5 The peripheral circuit of VCC pin and EN pin EN pin voltage VEN(ON) VCC(ON) REG pin voltage VEN(OFF) VCC pin voltage COMP pin voltage VCOMP(ON) VCOMP(OFF) VCC(OFF) IC switching status OFF ON OFF ON OFF Figure 8-6 Start up operation
BL0200-DS Rev.2.1 SANKEN ELECTRIC CO.,LTD. 12 Feb. 25, 2014 When the on -duty of the PWM dimming signal is small, the charge current at the COMP pin is controlled as follows in order to raise the output current quickly at startup. Figure 8-7 shows the operation waveform with the PWM dimming signal at startup. PWM pin Dimming signal COMP pin voltage EN pin voltage IFB pin voltage Constant current control COMP pin charge current IC switching status OFF ON VCOMP(ON) VREF pin voltage VIFB1(COMP.VR) ICOMP(S) ICOMP(SRC) VEN(ON) VCC pin voltage VCC(ON) Figure 8-7 Startup operation during PWM dimming While the IFB pin voltage increases to the IFB Pin Voltage at COMP Charge Switching, V IFB(COMP.VR), a capacitors at the COMP pin are charged by I COMP(S) = −11 µA. During this period, they are charged by the COMP Pin Source Current, ICOMP(SRC) = −57 µA, when the PWM pin volt age is 1.5 V or more. Thus, the COMP pin voltage increases immediately. When the IFB pin voltage increases to V IFB(COMP.VR) or more, the COMP pin source current is controlled according to the feedback amount, and the output current is controlled constant. The on-duty gradually becomes wide according to the increase of the COMP pin voltage, and the output power increases (Soft start operation). Thus, power stresses on components are reduced. When the VCC pin voltag e or EN pin voltage decreases to the operation stop voltage or less, or the Auto Restart operation (see the Section 0 Protection Function) after protection is achieved, then the control circuit stops switching operation, and simultaneously capacitors at the COMP pin are discharged by the COMP Pin Reset Curre nt, I COMP(R) = 360 µA. Because the on-duty gradually becomes wide after cycling power to the IC, the soft start operation is achieved at restart. The IC is operated by Auto Resta rt 1 at startup operation. See the Section 8.7 Protection Function about the caution of startup operation. VIFB(COMP.VR) is determined by the VREF pin voltage as shown in Figure 8-4.
8.3 Constant Current Control Operation
Figure 8-8 shows the IFB pin peripheral circuit. When the dimming MOSFET (Q2, Q4) turns on, the LED output current, I OUT(CC), is detected by the current detection resistor, R15 and R61 . The IC compares the IFB pin voltage with the VREF pin voltage by the internal error amplifier, and controls the IFB pin voltage so that it gets close to the VREF pin voltage. The reference voltage at the VREF pin is the divided voltage of the REG pin volt age, VREG = 5 V, by R32 to R35, and thus this voltage can be externally adjusted. The setting current, I OUT(CC), of the LED_OUT can be calculated as follows. SEN REF )CC(OUT R VI (8-2) Where: VREF is the VREF pin voltage. The value is recommended to be 0.5 V to 2.0 V. RESN is the value of output current detection resistor Output current detection resistor Abnormal Detector VREFError Amp. R15 5IFB1 IOUT(CC) LED_OUT1(+) LED_OUT1(-) REGVCC R34 R35 R32 R33 Figure 8-8 IFB pin peripheral circuit
BL0200-DS Rev.2.1 SANKEN ELECTRIC CO.,LTD. 13 Feb. 25, 2014
8.4 PWM Dimming Function
Figure 8-9 shows the peripheral circuit of PWM pin and SW pin. The PWM pin is used for the PWM dimming signal input. The SW pin drives the gate of ext ernal dimming MOSFET (Q2, Q4) . The SW pin voltage is turned on / off by PWM signal and thus the dimming of LED is controlled by PWM signal input. As shown in Figure 8-10, when the PWM pin voltage becomes the PWM Pin ON Threshold Voltage, VPWM(ON) = 1.5 V or more, the SW pin voltage becomes VCC. When the PWM pin voltage becomes the PWM Pin OFF Threshold Voltage, V PWM(OFF) = 1.0 V or less, the SW pin voltage becomes 0.1 V or less. The PWM pin has the absolute maximum voltage of −0.3 V to 5 V, and the input impedance, RPWM, of 200 kΩ. The PWM dimming signal should meet these specifications and threshold voltages of V PWM(ON) and VPWM(OFF). SW1 Q2 R15 DrivePWM OSC Main Logic
3 PWM1
PWM_IN PWM Pulse Detector VCC LED LED_OUT1(+) LED_OUT1(−) Figure 8-9 The peripheral circuit of PWM pin and SW pin. PWM pin voltage SW pin voltaege VPWM(ON) VPWM(OFF) VCC Time Time ≤ 0.1V Figure 8-10 The waveform of PWM pin and SW pin
8.5 Gate Drive
Figure 8-11 shows the peripheral circuit of DRV pin and SW pin and FSET pin. The DRV pin is for boost MOSFET, Q1 and Q3 . The SW pin is for dimming MOSFET, Q2 and Q4 . Table 8-1 shows drive voltages and currents of DRV pin and SW pin.
- Power MOSFET should be selected so that these VGS(th) threshold voltages are less than V DRV enough over entire operating temperature range.
- Peripheral components of Power MOSFET, gate resistors and diode, affect losses of power MOSFET, gate waveform (ringing caused by the printed circuit board trace layout ), EMI noise, and so forth, these values should be adjusted based on actual operation in the application.
- The resistors between gate and source ( R19, R24, R47 and R63) are used to prevent malfunctions due to steep dv/dt at turn -off of the power MOSFET, and these resistors are connected near each the gate of the power MOSFETs and t he ground line side of the current detection resistance. The reference value of them is from 10 kΩ to 100 kΩ. Table 8-1 Drive voltage and current Pins Drive voltage, VDRV Drive current, IDRV High Low Source Sink DRV VCC ≤ 0.1 V −0.36 A 0.85 A SW VCC ≤ 0.1 V −85 mA 220 mA R15 Q1C1 LED_OUT1(+) R16 R17 R19 R20 R21 R22 R24 DRV1 SW1 PWM OSC Main Logoc Drive Drive VCC VCC GND 9 Figure 8-11 The peripheral circuit of DRV pin, SW pin and FSET pin
BL0200-DS Rev.2.1 SANKEN ELECTRIC CO.,LTD. 14 Feb. 25, 2014
8.6 Error Signal Output Function (BL0200C)
When the protection function is active, the internal switch becomes OFF. The drain of this internal switch is connected to ER pin. In case the error signal is received by external microcomputer, the pull -up resistor, R40, and the protection resistor of ER pin, R39, are connected as shown in Figure 8-12. When the protection function is active, ER_OUT becomes REG pin voltage from 0 V. The resistances of R39 and R40 are about 10 kΩ. R40 REG ER GND
7 C12
ER_OUT Auto restart protection Figure 8-12 ER pin peripheral circuit
8.7 Protection Function
As shown in Table 8-2, the IC performs protection operations according to kind of abnormal state. In all protection functions, when the fault condition is removed, the IC returns to normal operation automatically. The intermitted oscillation operation reduces stress on the power MOSFET, the secondary rectifier diode, and so forth. Table 8-2 Relationship between a kind of abnormal state and protection operations Abnormal States Protection Operations
1 Overcurrent of boost circuit (OCP)
2 Overcurrent of LED output (LED_OCP)
3 Overvoltage of LED_OUT(+) (OVP)
4 Short mode between LED_OUT(−) and
5 Short mode of LED current detection
resistor (RSEN_Short)
6 Short mode of both ends of LED output Auto
Restart 2 7 Open mode of LED current detection resistor (RSEN_Open)
8 Overtemperature of junction of IC
(TSD) Auto Restart 3 Auto Restart 1: As shown in Figure 8-13, the IC repeats an intermitted oscillation operation, after the detection of any one of abnormal states 1 to 5 in Table 8-2. This intermitted oscillation is determined by tARS1 or tARS2, and tAROFF1. The tARS1 is an oscillation time in the first intermitted oscillation cycle, TAR1. The tARS2 is an oscillation time in the second and subsequent intermitted oscillation cycle, TAR2. The tAROFF1 is a non -oscillation time in all intermitted oscillation cycle. In case PWM dimming frequency is low and the on-duty is small, the startup operation, the restart operation from on-duty = 0 % and the restart operation from intermitted oscillation operation need a long time. Thus the value of tARS1 and tARS2 depend on frequency and on -duty of the PWM dimming signal, as shown in Figure 8-15 and Figure 8-16 for BL020×C, Figure 8-17 and Figure 8-18 for BL0202B. Table 8-3 shows the Auto Restart 1 oscillation time, tARS1, tARS2, and the Auto Restart 1 non-oscillation time, tAROFF1, at on-duty = 100 %. Table 8-3 Oscillation time and non-oscillation time (at on-duty = 100 %) Oscillation time, tARS1 Oscillation time, tARS2 non-oscillation time, tAROFF1 BL0200C BL0202C 31 ms 20.5 ms About 635 ms BL0202B 61.4 ms 41.0 ms About 1.3 s Auto Restart 2: As shown in Figure 8-14, the IC stops the switching operation immediately after the detection of abnormal states 6 or 7 in Table 8-2, and repeats an intermitted oscillation operation. In the intermitted oscillation cycle, the t ARSW is an oscillation time, the t AROFF1 is a non-oscillation time. The value of tARSW is a few microseconds. The value of tARS2 is derived from Figure 8-18, and t AROFF2 is calculated as follows: 1AROFFARSW2ARS2AROFF tttt (8-3) In case the on -duty is 100%, the value of t AROFF2 becomes as follows: L0200C、BL0202C： tAROFF2 ≒ 20.5 + 635 = 655.5 (ms) BL0202B： tAROFF2 ≒ 0.041 + 1.3 = 1.341 (s)
BL0200-DS Rev.2.1 SANKEN ELECTRIC CO.,LTD. 17 Feb. 25, 2014 The protection operation according to the abnormal states in Table 8-2 is described in detail as follows:
8.7.1 Overcurrent of Boost Converter Part
(OCP) When the OC pin de tects the overcurrent of boost circuit, the IC switches to Auto Restart 1. Figure 8-22 shows the peripheral circuit of OC pin. When the boost MOSFET (Q1, Q3) turns on, the current flowing to L1 is detected by the current detection resistor (R20, R48), and the voltage on R4 is input to the OC pin. When the OC pin voltage increases to the OC Pin Overcurrent Protection Threshold Voltage, VOCP = 0.60 V or more, the on -duty becomes narrow by pulse-by-pulse basis, and the output power is limited. R20 LED_OUT1(+) LED_OUT1(-) U1 OC1 GND 9 R15R18 IL(ON) Figure 8-22 OC pin peripheral circuit
8.7.2 Overcurrent of LED Output
(LED_OCP) Figure 8-23 shows the peripheral circuit of IFB pin and COMP pin. When the dimming MOSFET (Q2, Q4) turns on, the output current is detected by the detection resistor (R15, R61). When the boost operation cannot be done by failure such as short circuits in LED string, the IFB pin voltage is increased by the increase of LED current. There are three types of operation modes in LED_OCP state. (1) When the IFB pin voltage is increased by the increase of LED current , COMP pin voltage is decreases. In addition, when the COMP pin voltage decreases to the COMP Pin Voltage at Oscillation Stop, VCOMP(OFF) = 0.25 V or less, the IC stops switching operation, and limits the increase of the output current. When IFB pin voltage is decreased by the decrease of LED current, COMP pin voltage increases. When COMP pin voltage becomes V COMP(ON) = 0.50 V or more, the IC restarts switching operation. (2) When IFB pin voltage becomes V IFB(OCL.VR) or more (see Figure 8-20), the IC switches to Auto Restart 1. (3) The LED current increases further and when the IFB pin voltage increases to the IFB Pin Overcurrent Protection High Threshold Voltage, VIFB(OCH) = 4.0 V or more, the IC switches to Auto Restart 2. Output current detection resistor R15 5IFB1 LED_OUT1(+) LED_OUT1(-) 4COMP1 R42 C15 C16OC1 control Feed back1 control Figure 8-23 The peripheral circuit of IFB pin and COMP pin
8.7.3 Overvoltage of LED_OUT (+) (OVP)
The OVP pin detects LED_OUT (+) voltage as shown in Figure 8-24. When the LED_OUT (+) or the IFB pin is open and the OVP pin voltage increases to the OVP Pin Overvoltage Protection Threshold Voltage, VOVP = 3.00 V, the IC immediately stops switchin g operation. When the OVP pin voltage decreases to the OVP Pin Overvoltage Protection Release Threshold Voltage, VOVP(OFF) = 2.75 V or the IFB pin voltage decreases to VIFB(AR.VR) in Figure 8-20, then the IC switches to Auto Restart 1. LED_OUT2(+) D9 D8 C18 R15 R61 OVP GND LED_OUT1(+) Figure 8-24 OVP pin peripheral circuit
BL0200-DS Rev.2.1 SANKEN ELECTRIC CO.,LTD. 18 Feb. 25, 2014
8.7.4 Short Mode between LED_OUT(−)
When the LED_OUT ( –) and the GND are shorted, and the IFB pin voltage decreases to V IFB(AR.VR) in Figure 8-20, then the IC switches to Auto Restart 1.
8.7.5 Short Mode of LED Current Detection
Resistor (RSEN_Short) When the output current detection resistor (R15, R61), is shorted, the IFB pin voltage decreases. When the IFB pin voltage decreases to V IFB(AR.VR) in Figure 8-20, then the IC switches to Auto Restart 1.
8.7.6 Short Mode of LED Output Both Ends
When the LED_OUT (+) and LED_OUT ( –) are shorted, the short current flows through the output current detection resistor (R15, R61), while the dimming MOSFET (Q2, Q4) turns on. The IFB pin detects the voltage rise of the detection resistor. When the IFB pi n voltage increases to the IFB Pin Overcurrent Protection High Threshold Voltage, VIFB(OCH) = 4.0 V or more, the IC switches to Auto Restart 2.
8.7.7 Open Mode of LED Current Detection
Resistor (RSEN_Open) When the output current detection resistor (R15, R61), is open, the IFB pin voltage increases. When the IFB pin voltage increases to the IFB Pin Overcurrent Protection High Threshold Voltage, VIFB(OCH) = 4.0 V or more, the IC switches to Auto Restart 2.
8.7.8 Overtemperature of junction of IC
(TSD) When the temperature of the IC increases to Tj(TSD) = 125 °C (min) or more, the TSD is activated, and the IC stops switching operation. When the junction temperature decreases by T j(TSD) − Tj(TSD)HYS after the fault condition is removed, the IC returns to normal operation automatically. 9. Design Notes
9.1 Peripheral Components
Take care to use the proper rating and proper type of components. Input and output electrolytic capacitors , C1, C2, C18 and C21 ▫ Apply proper design margin to accommodate ripple current, voltage, and temperature rise. ▫ Use of high ripple current and low impedance types, designed for switch -mode power supplies, is recommended, depending on their purposes. Inductor, L1, L2 ▫ Apply proper design margin to temperature rise by core loss and copper loss. ▫ Apply proper design margin to core saturation. Current detection resistors, R15, R20, R48 and R61 Choose a type of low internal inductance because a high frequency switching current flows to the current detection resisto r, and of properly allowable dissipation.
9.2 Inductor Design Parameters
The CRM * or DCM* mode of boost converter with PWM dimming can improve the output current rise during PWM dimming. * CRM is the critical conduction mode, DCM is the discontinuous conduction mode. (1) On-duty Setting The output voltage of boost converter is more than the input voltage. The on -duty, DON can be calculated using following equation. The equality of the equation means the condition of CRM mode operation and the inequality means that of DCM mode operation. OUT INOUT ON V VVD (9-1) where: VIN is the minimum input voltage, VOUT is the maximum forward voltage drop of LED string. DON is selected by the above equation applied to CRM or DCM mode. In case f PWM = 100 kHz, the range of D ON should be 3.1 % to 90 %. In case fPWM = 200 kHz, the range of D ON should be 6 % to 90 %. (The minimum value results from the condition of tMIN, and fPWM. The maximum value is DMAX).
BL0200-DS Rev.2.1 SANKEN ELECTRIC CO.,LTD. 19 Feb. 25, 2014 (2) Inductance value, L The inductance value, L, for DCM or CRM mode can be calculated as follow: INUTOPWMOUT ONIN VVfI2 DVL (9-2) where: IOUT is the maximum output current, fPWM is the maximum operation frequency of PWM (3) Peak inductor current, ILP PWM ONIN LP fL DVI (9-3) (4) Inductor selection The inductor should be applied the value of inductance, L, from equation (9 -2) and the DC superimposition characteristics being higher than the peak inductor current, ILP, from equation (9-3).
9.3 PCD Trace Layout and Component
Since the PCB circuit trace design and the component layout signif icantly affects operation, EMI noise, and power dissipation, the high frequency PCB trace as shown in Figure 9-1 should be low impedance with small loop and wide trace. C21 C18 Figure 9-1 High-frequency current loops (hatched areas) In addition, the ground traces affect radiated EMI noise, and wide, short traces should be taken into account. Figure 9-2 shows the circuit design example of BL0200C. (1) Main Circuit Trace Layout This is the main trace containing switching curr ents, and thus it should be as wide trace and small loop as possible. C1 and C18 should be connected near the inductors, L1and L2, in order to reduce impedance of the high frequency current loop. (2) Control Ground Trace Layout Since the operation of IC may be affected from the large current of the main trace that flows in control ground trace, the control ground trace should be connected at a single point grounding of point A with a dedicated trace. (3) Current Detection Resistor Trace Layout R15, R20, R48 and R61 are current detection resistors. The trace from the base of current detection resistor should be connected to the pin of IC with a dedicated trace. (4) COMP pin Trace Layout for Compensation Component The components connected to COMP pin are compensation components. The trace of the compensation component should be connected as close as possible to COMP pin , to reduce the influence of noise. (5) Bypass Capacitor Trace Layout on VCC , REG, and VREF pins C8, C12 and C10 of bypass capacitors, connected to VCC, REG, a nd VREF pins respectively, should be connected as close as possible to the pin of IC , to reduce the influence of noise. (6) Power MOSFET Gate Trace Layout The resistor between gate and source, R19, R24, R47 and R63 , should be connected near each the gate of the power MOSFETs and the ground line side of the current detection resistance. Peripheral components of MOSFET, gate resistors and diodes, should be connected as close as possible between each the gate of the power MOSFETs and the pin of IC.
BL0200-DS Rev.2.1 SANKEN ELECTRIC CO.,LTD. 20 Feb. 25, 2014 P_IN P_GND C21 DRV1 GND C2 Q2 LED_OUT2(+) VCC_IN PWM2_IN ON/OFF PWM1_IN S_GND REG1 A LED_OUT2(-) LED_OUT1(+) LED_OUT1(-) (2) Control ground trace layout should be connected at a single point grounding of point A with a dedicated trace (5)Bypass capacitor（C8,C10,C12）should be connected as close as possible to the pin of IC. (4) COMP pin peripheral components should be connected as close as possible to the pin of IC. (3) Current detection resistance should be connected to the pin of IC with a dedicated trace. (1) Main circuit trace Should be as wide trace and small loop. (6) Power MOSFET Gate Trace Layout Gate-Source resistor should be connected near gate of power MOSFET and ground line side of Current detection resistor. Gate resistors and diodes should be connected as close as possible between the gate of power MOSFET and the pin of IC. ER_OUT Figure 9-2 Peripheral circuit example around the IC (BL0200C)
BL0200-DS Rev.2.1 SANKEN ELECTRIC CO.,LTD. 21 Feb. 25, 2014 10.Reference Design of Power Supply As an example, the following show a power supply specification of BL0200C and BL0202B, circuit schematic, bill of materials, and transformer specification. This reference design is the example of the value of parts, and should be adjusted based on actual operation in the application.
10.1 BL0200C
BL0200C Features - DRV pin oscillation frequency is 200 kHz - Error signal output Power Supply Specification IC BL0200C Input voltage DC 24 V Maximum output power 40 W (max.) Output voltage 50 V Output current 400 mA × 2 Circuit Schematic P_IN P_GND C21 DRV1 GND OUT2 VCC_IN ER_OUT PWM2_IN ON/OFF PWM1_IN S_GND REG1
BL0200-DS Rev.2.1 SANKEN ELECTRIC CO.,LTD. 22 Feb. 25, 2014 Bill of Materials Symbol Part type Ratings(1) Recommended Sanken Parts Symbol Part type Ratings(1) Recommended Sanken Parts F1 Fuse 3 A R5-R14 General, chip, 2012 Open L1 Inductor 25 μH, 3 A R15 General 1.35 Ω, 1 W L2 Inductor 25 μH, 3 A R16 General, chip, 2012 10 Ω D1 Fast recovery 200 V, 1.5 A EL 1Z R17 General, chip, 2012 100 Ω D2 Schottky 30 V, 1 A SJPA-D3 R18 (2) General, chip, 2012 100 Ω D3 Schottky 30 V, 1 A SJPA-D3 R19 General, chip, 2012 10 kΩ D6 Fast recovery 200 V, 1.5 A EL 1Z R20 General 0.22 Ω, 2 W D7 Schottky 30 V, 1 A SJPA-D3 R21 General, chip, 2012 470 Ω D8 200 V, 1 A AL01Z R22 General, chip, 2012 1.5 kΩ D9 200 V, 1 A AL01Z R23 General, chip, 2012 1.5 kΩ D10 Schottky 30 V, 1 A SJPA-D3 R24 General, chip, 2012 10 kΩ Q1 Power MOSFET 200 V, 45 mΩ (typ.) SKP202 R25 General, chip, 2012 1 kΩ Q2 Power MOSFET 100 V, 1 Ω (typ.) R26 General, chip, 2012 33 kΩ Q3 Power MOSFET 200 V, 45 mΩ (typ.) SKP202 R27 General, chip, 2012 10 kΩ Q4 Power MOSFET 100 V, 1 Ω (typ.) R28 General, chip, 2012 10 kΩ Q5 PNP Transistor −50 V, 0.1 A R29 General, chip, 2012 12 kΩ Q6 NPN Transistor 50 V, 0.1 A R30 General, chip, 2012 10 kΩ C1 Electrolytic 50 V, 22 μF R31 General, chip, 2012 15 kΩ C2 Electrolytic 100 V, 47 μF R32 General, chip, 2012 10 kΩ C3 (2) Ceramic, chip, 2012 100 pF R33 General, chip, 2012 0 Ω C4 (2) Ceramic, chip, 2012 100 pF R34 General, chip, 2012 82 kΩ C5 Ceramic, chip, 2012 10 nF R35 General, chip, 2012 560 Ω C6 Ceramic, chip, 2012 470 pF R36 General, chip, 2012 33 kΩ C7 Electrolytic 50 V, 100 μF R37 General, chip, 2012 10 kΩ C8 Ceramic, chip, 2012 50 V, 0.1 μF R38 General, chip, 2012 1 kΩ C9 Ceramic, chip, 2012 50 V, 0.1 μF R39 General, chip, 2012 10 kΩ C10 Ceramic, chip, 2012 0.1 μF R40 General, chip, 2012 10 kΩ C11 Ceramic, chip, 2012 470 pF R41 (2) General, chip, 2012 22 kΩ C12 Ceramic, chip, 2012 0.1 μF R42 (2) General, chip, 2012 22 kΩ C13 (2) Ceramic, chip, 2012 0.047 μF R44 General, chip, 2012 10 Ω C14 (2) Ceramic, chip, 2012 2200 pF R45 General, chip, 2012 100 Ω C15 (2) Ceramic, chip, 2012 0.047 μF R46 (2) General, chip, 2012 100 Ω C16 (2) Ceramic, chip, 2012 2200 pF R47 General, chip, 2012 10 kΩ C18 Electrolytic 100 V, 47 μF R48 General 0.22 Ω, 2 W C19 (2) Ceramic, chip, 2012 100 pF R49 General, chip, 2012 470 Ω C20 (2) Ceramic, chip, 2012 100 pF R50 General, chip, 2012 1.5 kΩ C21 Electrolytic 50 V, 22 μF R51-R60 General, chip, 2012 Open R1 (3) General, chip, 2012 110 kΩ R61 General 1.35 Ω, 1 W R2 (3) General, chip, 2012 110 kΩ R62 General, chip, 2012 1.5 kΩ R3 (3) General, chip, 2012 0 Ω R63 General, chip, 2012 10 kΩ R4 General, chip, 2012 11 kΩ U1 IC BL0200C (1) Unless otherwise specified, the voltage rating of capacitor is 50V or less, and the power rating of resistor is 1/8W or less. (2) It is necessary to be adjusted based on actual operation in the application. (3) Resistors applied high DC voltage and of high resistance are recommended to select resistors designed against electromigration or use combinations of resistors in series for that to reduce each applied voltage, according to the requirement of the application.
BL0200-DS Rev.2.1 SANKEN ELECTRIC CO.,LTD. 23 Feb. 25, 2014
10.2 BL0202B
BL0202B Features - DRV pin oscillation frequency is 100 kHz - Enable function Power Supply Specification IC BL0202B Input voltage DC 24 V Maximum output power 40 W (max.) Output voltage 50 V Output current 400 mA × 2 Circuit P_IN P_GND C21 DRV1 GND OUT2 VCC_IN ON/OFF PWM2_IN PWM1_IN S_GND REG1
BL0200-DS Rev.2.1 SANKEN ELECTRIC CO.,LTD. 24 Feb. 25, 2014 Bill of Materials Symbol Part type Ratings(1) Recommended Sanken Parts Symbol Part type Ratings(1) Recommended Sanken Parts F1 Fuse 3 A R4 General, chip, 2012 11 kΩ L1 Inductor 50 μH, 3 A R5-R14 General, chip, 2012 Open L2 Inductor 50 μH, 3 A R15 General 1.35 Ω, 1 W D1 Fast recovery 200 V, 1.5 A EL 1Z R16 General, chip, 2012 10 Ω D2 Schottky 30 V, 1 A SJPA-D3 R17 General, chip, 2012 100 Ω D3 Schottky 30 V, 1 A SJPA-D3 R18 (2) General, chip, 2012 100 Ω D6 Fast recovery 200 V, 1.5 A EL 1Z R19 General, chip, 2012 10 kΩ D7 Schottky 30 V, 1 A SJPA-D3 R20 General 0.22 Ω, 2 W D8 200 V, 1 A AL01Z R21 General, chip, 2012 470 Ω D10 Schottky 30 V, 1 A SJPA-D3 R22 General, chip, 2012 1.5 kΩ Q1 Power MOSFET 200 V, 45 mΩ (typ.) SKP202 R23 General, chip, 2012 1.5 kΩ Q2 Power MOSFET 100 V, 1 Ω (typ.) R24 General, chip, 2012 10 kΩ Q3 Power MOSFET 200 V, 45 mΩ (typ.) SKP202 R25 General, chip, 2012 1 kΩ Q4 Power MOSFET 100 V, 1 Ω (typ.) R26 General, chip, 2012 33 kΩ C1 Electrolytic 50 V, 22 μF R27 General, chip, 2012 10 kΩ C2 Electrolytic 100 V, 100 μF R32 General, chip, 2012 10 kΩ C3 (2) Ceramic, chip, 2012 100 pF R33 General, chip, 2012 0 Ω C4 (2) Ceramic, chip, 2012 100 pF R34 General, chip, 2012 82 kΩ C5 Ceramic, chip, 2012 10 nF R35 (2) General, chip, 2012 560 Ω C6 Ceramic, chip, 2012 470 pF R37 General, chip, 2012 10 kΩ C7 Electrolytic 50 V, 100 μF R38 General, chip, 2012 1 kΩ C8 Ceramic, chip, 2012 50 V, 0.1 μF R39 General, chip, 2012 5 kΩ (VEN = 3.5 V) C9 Ceramic, chip, 2012 50 V, 0.1 μF R40 General, chip, 2012 10 kΩ C10 Ceramic, chip, 2012 0.1 μF R41 (2) General, chip, 2012 22 kΩ C11 Ceramic, chip, 2012 470 pF R42 (2) General, chip, 2012 22 kΩ C12 Ceramic, chip, 2012 0.1 μF R44 General, chip, 2012 10 Ω C13 (2) Ceramic, chip, 2012 0.047 μF R45 General, chip, 2012 100 Ω C14 (2) Ceramic, chip, 2012 2200 pF R46 (2) General, chip, 2012 100 Ω C15 (2) Ceramic, chip, 2012 0.047 μF R47 General, chip, 2012 10 kΩ C16 (2) Ceramic, chip, 2012 2200 pF R48 General 0.22 Ω, 2 W C18 Electrolytic 100 V, 100 μF R49 General, chip, 2012 470 Ω C19 (2) Ceramic, chip, 2012 100 pF R50 General, chip, 2012 1.5 kΩ C20 (2) Ceramic, chip, 2012 100 pF R51-R60 General, chip, 2012 Open C21 Electrolytic 50 V, 22 μF R61 General 1.35 Ω, 1 W C22 Ceramic, chip, 2012 0.1 μF R62 General, chip, 2012 1.5 kΩ R1 (3) General, chip, 2012 110 kΩ R63 General, chip, 2012 10 kΩ R2 (3) General, chip, 2012 110 kΩ U1 IC BL0202B R3 (3) General, chip, 2012 0 Ω (1) Unless otherwise specified, the voltage rating of capacitor is 50V or less, and the power rating of resistor is 1/8W or less. (2) It is necessary to be adjusted based on actual operation in the application. (3) Resistors applied high DC voltage and of high resistance are recommended to select resistors designed against electromigration or use combinations of resistors in series for that to reduce each applied voltage, according to the requirement of the application.
BL0200-DS Rev.2.1 SANKEN ELECTRIC CO.,LTD. 25 Feb. 25, 2014 OPERATING PRECAUTIONS In the case that you use Sanken products or design your products by using Sanken products, the reliability largely depends on the degree of derating to be made to the rated values. Derating may be interpreted as a case that an operation range is set by derating the load from e ach rated value or surge voltage or noise is considered for derating in order to assure or improve the reliability. In general, derating factors include electric stresses such as electric voltage, electric current, electric power etc., environmental stresses such as ambient temperature, humidity etc. and thermal stress caused due to self-heating of semiconductor products. For these stresses, instantaneous values, maximum values and minimum values must be taken into consideration. In addition, it should be noted that since power devices or IC’s including power devices have large self-heating value, the degree of derating of junction temperature affects the reliability significantly. Because reliability can be affected adversely by improper storage environmen ts and handling methods, please observe the following cautions. Cautions for Storage Ensure that storage conditions comply with the standard temperature (5 to 35°C) and the standard relative humidity (around 40 to 75%); avoid storage locations that experience extreme changes in temperature or humidity. Avoid locations where dust or harmful gases are present and avoid direct sunlight. Reinspect for rust on leads and solderability of the products that have been stored for a long time. Cautions for Testing and Handling When tests are carried out during inspection testing and other standard test periods, protect the products from power surges from the testing device, shorts between the product pins, and wrong connections. Ensure all test parameters are within the ratings specified by Sanken for the products. Soldering When soldering the products, please be sure to minimize the working time, within the following limits:
- 260 ± 5 °C 10 ± 1 s (Flow, 2 times)
- 380 ± 10 °C 3.5 ± 0.5 s (Soldering iron, 1 time) Electrostatic Discharge When handling the products, the operator must be grounded. Grounded wrist straps worn should have at least 1M Ω of resistance from the operator to ground to prevent shock hazard, and it should be placed near the operator. Workbenches where the products are handled should be grounded and be provided with conductive table and floor mats. When using measuring equipment such as a curve tracer, the equipment should be grounded. When soldering the products, the head of soldering irons or th e solder bath must be grounded in order to prevent leak voltages generated by them from being applied to the products. The products should always be stored and transported in Sanken shipping containers or conductive containers, or be wrapped in aluminum foil.
BL0200-DS Rev.2.1 SANKEN ELECTRIC CO.,LTD. 26 Feb. 25, 2014 IMPORTANT NOTES The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest revision of the document before use. Application and operation examples described in this document are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party w hich may result from its use. Unless otherwise agreed in writing by Sanken, Sanken makes no warranties of any kind, whether express or implied, as to the products, including product merchantability, and fitness for a particular purpose and special environm ent, and the information, including its accuracy, usefulness, and reliability, included in this document. Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. Sanken products listed in this document are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), and whenever long life expectancy is required even in general purpose electronic equipment or apparatus, please contact your nearest Sanken sales representative to discuss, prior to the use of the products herein. The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. When using the products specified herein by either (i) combining other products or materials therewith or (ii) physically, chemically or otherwise processing or treating the products, please duly consider all possible risks that may result from all such uses in advance and proceed therewith at your own responsibility. Anti radioactive ray design is not considered for the products listed herein. Sanken assumes no responsibility for any troubles, such as dropping products caused during transportation out of Sanken’s distribution network. The contents in this document must not be transcribed or copied without Sanken’s written consent.