BFY90 MICROSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

  • Silicon NPN, To-72 packaged VHF/UHF Transistor
  • Low Noise, 2.5 dB ( typ) @ 500 MHz, 5v, 2.0 mA,
  • 1.3 GHz Current-Gain Bandwidth Product @ 25mA IC
  • Power Gain, G PE = 19 dB ( typ) @ 200 MHz

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MSC1310.PDF 10-25-99 BFY90 ELECTRICAL SPECIFICATIONS ( Tcase = 25 °C) STATIC (off) Symbol Test Conditions Value Min. Typ. Max. Unit BVCEO Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) 15 - - Vdc ICBO Collector Cutoff Current (VCE = 15 Vdc, IE = 0 Vdc) - - 10 nA (on) HFE DC Current Gain (IC = 25 mAdc, VCE = 1.0 Vdc) 20 - 125 - DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit fT Current-Gain - Bandwidth Product (IC = 25 mAdc, VCE = 5 Vdc, f = 500 MHz) 1.3 - - GHz NFmin (IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 500 MHz - 2.5 5.0 dB Cibo Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) - - 2.0 pF

Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 8 mA

MSC1310.PDF 10-25-99 BFY90