BFY90 ADPOW | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
- Silicon NPN, To - 72 packaged VHF/UHF Transistor
- Low Noise, 2.5 dB (typ) @ 500 MHz, 5v, 2.0 mA,
- 1.3 GHz Current - Gain Bandwidth Product @ 25mA IC
- Power Gain, G PE = 19 dB (typ) @ 200 MHz
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA 189 36 - 1013 PHONE: (215) 631 - 9840 FAX: (215) 631 - 9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW .ADVANCEDPOWER.COM or contact our factory direct. ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Value Symbol Test Conditions Min. Typ. Max. Unit BVCEO Collector - Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Vdc ICBO Collector Cutoff Current (VCE = 15 Vdc, IE = 0 Vdc) nA (on) HFE DC Current Gain (IC = 25 mAdc, VCE = 1.0 Vdc) 125 DYNAMIC Value Symbol Test Conditions Min. Typ. Max. Unit fT Current - Gain - Bandwidth Product (IC = 25 mAdc, VCE = 5 Vdc, f = 500 MHz) 1.3 GHz NF min (IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 500 MHz 2.5 5.0 dB Cibo Emitter - Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2.0 pF
Visit our website at WWW .ADVANCEDPOWER.COM or contact our factory direct. Table 1. Common Emitter S - Parameters, @ VCE = 10 V, IC = 8 mA
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW .ADVANCEDPOWER.COM or contact our factory direct.