BFY50 STMICROELECTRONICS | Alldatasheet

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The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. INTERNAL SCHEMATIC DIAGRAM November 1997 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BFY50 BFY51 V CBO Collector-Base Voltage (IE =0 ) 8 0 6 0 V V CEO Collector-Emitter Voltage (IB =0 ) 3 5 3 0 V V EBO Emitter-Base Voltage (IC =0 ) 6 V IC Collector Current 1 A ICM Collector Peak Current (tp <5m s ) 1 . 5 A P tot Total Dissipation at Tamb ≤ 25 oC at Tcase ≤ 25 oC 0.8 W W Tstg Storage Temperature -65 to 200 oC Tj Max. Operating Junction Temperature 200 oC TO-39

Thermal Resistance Junction-Case Max Thermal Resistance Junction-Ambient Max 218 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE =0 ) forBFY50 V CB =6 0V V CB =6 0V T cas e=1 0 0oC forBFY51 V CB =4 0V V CB =4 0V T cas e=1 0 0oC 2.5 2.5 nA µ A nA µ A IEBO Emitter Cut-off Current (IC =0 ) V EB =5V V EB =5V T case =1 0 0oC 2.5 nA µ A V (BR)CBO Collector-Base Breakdown Voltage (IE = 0) I C =1 0 0µA forBFY50 forBFY51 V V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (IB =0 ) IC =3 0m A forBFY50 forBFY51 V V V (BR)EBO Emitter-Base Breakdown Voltage C =0 ) IC =1 0 0µA6 V V CE(sat)∗ Collector-Emitter Saturation Voltage IC =1 5 0m A I B =1 5m A forBFY50 forBFY51 IC =1A I B =0 . 1A forBFY50 forBFY51 0.14 0.14 0.7 0.7 0.2 0.35 1.6 V V V V V BE(sat)∗ Base-Emitter Saturation Voltage IC =1 5 0m A I B =1 5m A IC =1A I B =0 . 1A 0.95 1.5 1.3 V V hFE ∗ DC Current Gain for BFY50 IC =1 0m A V CE =1 0V IC =1 5 0m A V CE =1 0V IC =1 A V CE =1 0V forBFY51 IC =1 0m A V CE =1 0V IC =1 5 0m A V CE =1 0V IC =1 A V CE =1 0V h fe∗ Small Signal Current Gain V CE =6V f=1 K H z IC =1m A forBFY50 forBFY51 IC =1 0m A forBFY50 forBFY51 fT Transition Frequency I C =5 0m A V CE =1 0V forBFY50 forBFY51 100 110 MHz MHz C CBO Collector Base Capacitance IE =0 V CB = 10 V f = 1MHz 10 pF ∗ Pulsed: Pulse duration = 300µs, duty cycle≤ 1% BFY50/BFY51

ELECTRICAL CHARACTERISTICS (continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit hie Input Impedance I C =1 0m A V CE =5V f=1 K H z forBFY50 forBFY51 180 220 Ω Ω hre Reverse Voltage Ratio IC =1 0m A V CE =5V f=1 K H z forBFY50 forBFY51 10-6 10-6 hoe Output Admittance I C =1 0m A V CE =5V f=1 K H z forBFY50 forBFY51 µ S µ S td Delay Time I C =1 5 0m A V CC =1 0V IB1 =1 5m A V BE =- 2V 15 ns tr Rise Time I C =1 5 0m A V CC =1 0V IB1 =1 5m A V BE =- 2V 40 ns ts Storage Time I C =1 5 0m A V CC =1 0V IB1 =- IB2 =1 5m A 300 ns tf Fall Time I C =1 5 0m A V CC =1 0V IB1 =- IB2 =1 5m A 60 ns ∗ Pulsed: Pulse duration = 300µs, duty cycle≤ 1% BFY50/BFY51

DIM. mm inch A 12.7 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 L4 5 o (typ.) L G I DA F E B H P008B TO-39 MECHANICAL DATA BFY50/BFY51

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsabilit y for the consequences of use of such information nor for any infringemen t of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise underany patent or patent rights of SGS-THOMSON Microelectr onics. Specifications mention ed in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectr onics products are not authorized for use as critical compon ents in life supportdevices or systems withoutexpre ss written approval of SGS-THOMSON Microelectonics.  1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserve d SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain- Sweden- Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... BFY50/BFY51