BFY420_11 INFINEON | Alldatasheet
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Technical content
IFAG IMM RPD D HIR 1 of 4 V2, February 2011 HiRel NPN Silicon RF Transistor HiRel Discrete and Microwave Semiconductor For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 22 GHz SIEGET25-Line Infineon Technologies Grounded Emitter Transistor-
25 GHz fT-Line
ESA/SCC Detail Spec. No.: 5611/008 Type Variant No. 02 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration 1 2 3 4 Package BFY420 (ql) - see below C E B E Micro-X (ql) Quality Level: P: Professional Quality H: High Rel Quality S: Space Quality ES: ESA Space Quality (see order instructions for ordering example) 1 2
IFAG IMM RPD D HIR 2 of 4 V2, February 2011 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 4.5 V Collector-base voltage VCBO 15 V Emitter-base voltage VEBO 1.5 V Collector current IC 35 mA Base current IB 3.0 mA Total power dissipation, TS 129°C 1), 2) Ptot 160 mW Junction temperature Tj 175 C Operating temperature range Top -65...+175 C Storage temperature range Tstg -65...+175 C Thermal Resistance Junction-soldering point 2) Rth JS < 285 K/W Notes.: 1) At TS = + 129 °C. For TS > + 129 °C derating is required. 2) TS is measured on the collector lead at the soldering point to the pcb.
Electrical Characteristics
at TA=25°C; unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - nA Collector-emitter cutoff current 1.) VCE = 4.5 V, IB = 1.0µA ICEX - - 200 (t.b.d.) µA Emitter-base cuttoff current VEB = 1.5 V, IC = 0 IEBO - DC current gain IC = 5 mA, VCE = 1 V hFE 50 90 150 - Notes: 1.) This Test assures V(BR)CE0 > 4.5V
IFAG IMM RPD D HIR 3 of 4 V2, February 2011 Electrical Characteristics (continued) Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 30mA, VCE = 3 V, f = 2.0 GHz fT GHz Collector-base capacitance VCB = 2 V, VBE = vbe = 0, f = 1 MHz CCB - 0.14 0.9 pF Collector-emitter capacitance VCE = 2 V, VBE = vbe = 0, f = 1 MHz CCE - 0.46 0.85 pF Emitter-base capacitance VEB = 0.5V, VCB = vcb = 0, f = 1 MHz CEB - 0.67 3.0 pF Noise Figure IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = Zsopt F - 1.1 1.7 dB Insertion power gain IC = 20 mA, VCE = 2 V, f = 1.8 GHz ZS = ZL = 50 |S21e|2 14 18 - dB Power gain IC = 20 mA, VCE = 2 V, f = 1.8 GHz ZS = ZSopt , ZL = ZLopt Gms 1.) - 21 - dB 1dB Compression point IC = 20 mA, VCE = 2 V, f = 1.8 GHz ZS = ZSopt , ZL = ZLopt P-1dB - 12 - dBm Notes.: G S S ms 21
IFAG IMM RPD D HIR 4 of 4 V2, February 2011 Micro-X Package Edition 2011-02 Published by Infineon Technologies AG
85579 Neubiberg, Germany
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