BFY405 INFINEON | Alldatasheet

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Technical content

Semiconductor Group 1 of 5 Draft B, September 99 HiRel NPN Silicon RF Transistor

  • HiRel Discrete and Microwave Semiconductor
  • For Low Current Applications
  • For Oscillators up to 12 GHz
  • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz
  • Hermetically sealed microwave package
  • Transition Frequency fT = 20 GHz
  • SIEGET 25-Line Infineon Technologies Grounded Emitter Transistor-

25 GHz fT-Line

ESA/SCC Detail Spec. No.: 5611/008 Type Variant No. 01 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration 1 2 3 4 Package BFY405 (ql) - see below C E B E Micro-X (ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1661 H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62702F1710 (see order instructions for ordering example)

Semiconductor Group 2 of 5 Draft B, September 99 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage V CEO 4.5 V Collector-base voltage V CBO 15 V Emitter-base voltage V EBO 1.5 V Collector current I C 12 mA Base current I B 1.0 mA Total power dissipation, TS ≤ 145°C 1), 2) Ptot 55 mW Junction temperature T j 175 °C Operating temperature range T op -65...+175 °C Storage temperature range T stg -65...+175 °C Thermal Resistance Junction-soldering point 2) Rth JS < 545 K/W Notes.: 1) At TS = + 145 °C. For TS > + 145 °C derating is required. 2) TS is measured on the collector lead at the soldering point to the pcb.

Electrical Characteristics

at TA=25°C; unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 10 nA Collector-emitter cutoff current 1.) VCE = 4.5 V, IB = 0.1µA ICEX -- 2 0 (t.b.d.) µA Emitter-base cuttoff current VEB = 1.5 V, IC = 0 IEBO -- 5 . 0 µA DC current gain IC = 5 mA, VCE = 1 V hFE 50 90 150 - Notes: 1.) This Test assures V(BR)CE0 > 4.5V

Semiconductor Group 3 of 5 Draft B, September 99 Electrical Characteristics (continued) Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 10mA, VCE = 3 V, f = 2.0 GHz fT 20 22 - GHz Collector-base capacitance VCB = 2 V, VBE = vbe = 0, f = 1 MHz CCB - 0.05 0.9 pF Collector-emitter capacitance VCE = 2 V, VBE = vbe = 0, f = 1 MHz CCE - 0.32 0.48 pF Emitter-base capacitance VEB = 0.5V, VCB = vcb = 0, f = 1 MHz CEB - 0.36 3.0 pF Noise Figure IC = 2 mA, VCE = 2 V, f = 1.8 GHz, ZS = Zsopt F - 1.15 1.8 dB Insertion power gain I C = 5 mA, VCE = 2 V, f = 1.8 GHz ZS = ZL = 50 Ω |S21e|2 14 18 - dB Power gain IC = 5 mA, VCE = 2 V, f = 1.8 GHz ZS = ZSopt , ZL = ZLopt Gms 1.) -2 3 - d B 1dB Compression point IC = 5 mA, VCE = 2 V, f = 1.8 GHz ZS = ZSopt , ZL = ZLopt P-1dB -5- d B m Notes.: 1) G S S ms = 21

Semiconductor Group 4 of 5 Draft B, September 99 Order Instructions: Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level. Ordering Form: BFY405 (ql) (ql): Quality Level Ordering Example: Ordering Code: Q62702F1710 BFY405 ES For BFY405 in ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.infineon.com/products/discrete/hirel.htm - HiRel Discrete and Microwave Semiconductors www.infineon.com/products/discrete/hirel.htm Please contact also our marketing division : Tel.: ++89 234 24480 Fax.: ++89 234 28438 e-mail: martin.wimmers@infineon.com Address: Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich

Semiconductor Group 5 of 5 Draft B, September 99 Micro-X Package Published by Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich. Infineon Technologies AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Infineon Technologies Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office, Semiconductor Group. Infineon Technologies Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000).