BFY183 INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Infineon Technology AG 1 of 5 Draft A, Jul. 01 01 HiRel NPN Silicon RF Transistor

  • HiRel Discrete and Microwave Semiconductor
  • For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA.
  • Hermetically sealed microwave package
  • fT= 8 GHz F = 2.3 dB at 2 GHz
  • qualified
  • ESA/SCC Detail Spec. No.: 5611/006 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package BFY183 (ql) - see below C E B E Micro-X1 (ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1609 H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62702F1713 (see order instructions for ordering example) 1 2

Infineon Technology AG 2 of 5 Draft A, Jul. 01 01 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage, VBE=0 VCES 20 V Collector-base voltage VCBO 20 V Emitter-base voltage VEBO 2 V Collector current IC 65 mA Base current IB 5 1.) mA Total power dissipation, TS ≤ 99°C 2.) Ptot 450 mW Junction temperature Tj 200 °C Operating temperature range Top -65...+200 °C Storage temperature range Tstg -65...+200 °C Thermal Resistance Junction-soldering point 2.) Rth JS < 225 K/W Notes.: 1) The maximum permissible base current for VFBE measurements is 20mA (spot- measurement duration < 1s) 2) TS is measured on the collector lead at the soldering point to the pcb.

Electrical Characteristics

at TA=25°C; unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-base cutoff current VCB = 20 V, IE = 0 ICBO - - 100 µA Collector-emitter cutoff current VCE = 12 V, IB = 0,3µA 1.) ICEX - - 300 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 50 nA Emitter base cuttoff current VEB = 2 V, IC = 0 IEBO - - 25 µA Emitter base cuttoff current VEB = 1 V, IC = 0 IEBO - - 0.5 µA Notes: 1.) This Test assures V(BR)CE0 > 12V

Infineon Technology AG 3 of 5 Draft A, Jul. 01 01 Electrical Characteristics (continued) Parameter Symbol Values Unit min. typ. max. DC Characteristics Base-Emitter forward voltage IE = 30 mA, IC = 0 VFBE - - 1 V DC current gain IC = 5 mA, VCE = 6 V hFE 55 90 160 - AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 500 MHz IC = 25 mA, VCE = 8 V, f = 500 MHz fT 6,5 7.5 GHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz CCB - 0.32 0.44 pF Collector-emitter capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz CCE - 0.34 - pF Emitter-base capacitance VEB = 0.5V, VCB = vcb = 0, f = 1 MHz CEB - 1.1 1.4 pF Noise Figure IC = 8 mA, VCE = 5 V, f = 2 GHz, ZS = ZSopt F - 2.3 2.9 dB Power gain IC = 20 mA, VCE = 5V, f = 2 GHz ZS = ZSopt , ZL= ZLopt Gma 1.) 12.5 14 - dB Transducer gain IC = 20 mA, VCE = 5 V, f = 2 GHz ZS = ZL = 50 Ω |S21e|2 9 10,5 - dB Output Power IC = 30 mA, VCE = 5 V, f = 2GHz , PIN=7dBm ZS = ZL = 50 Ω POUT 13.5 14.5 - dBm Notes.: 1) G S S k kma = − −21 12 12 ( ) , G S Sms = 21

Infineon Technology AG 4 of 5 Draft A, Jul. 01 01 Order Instructions: Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level. Ordering Form: BFY183 (ql) (ql): Quality Level Ordering Example: Ordering Code: Q62702F1713 BFY183 ES For BFY193 in ESA Space Quality Level Further Informations: See our WWW-Pages: - Wireless Semiconductors http://www.infineon.com - HiRel Discrete and Microwave Semiconductors www.infineon.com/cgi/ecrm.dll/ecrm/scripts/prod_ov.jsp?oid=16149&cat_oid=-8154

Semiconductor Group 5 of 5 Draft B, Jul. 01 Micro-X1 Package Published by Infineon Technologies Wireless, Discretes Products, Marketing, P.O.Box 801709, D- 81617 Munich. ã Infineon Technologies AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Infineon Technologies Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office, Semiconductor Group. Infineon Technologies Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000).