BFY182 INFINEON | Alldatasheet

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Technical content

Semiconductor Group 1 of 5 Draft B, September 1999 HiRel NPN Silicon RF Transistor

  • HiRel Discrete and Microwave Semiconductor
  • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA.
  • Hermetically sealed microwave package
  • fT= 8 GHz F = 2.4 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Variant No. 04 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package BFY182 (ql) - see below C EBEM i c r o - X 1 (ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1608 H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62702F1714 (see order instructions for ordering example)

Semiconductor Group 2 of 5 Draft B, September 1999 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage V CEO 12 V Collector-emitter voltage, VBE=0 V CES 20 V Collector-base voltage V CBO 20 V Emitter-base voltage V EBO 2V Collector current I C 35 mA Base current I B 4 1) mA Total power dissipation, TS ≤ 136°C 2), 3.) Ptot 250 mW Junction temperature T j 200 °C Operating temperature range T op -65...+200 °C Storage temperature range T stg -65...+200 °C Thermal Resistance Junction-soldering point 3.) Rth JS < 255 K/W Notes.: 1) The maximum permissible base current for VFBE measurements is 20mA (spot- measurement duration < 1s) 2) At T S = + 136 °C. For TS > + 136 °C derating is required. 3) TS is measured on the collector lead at the soldering point to the pcb.

Electrical Characteristics

at TA=25°C; unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-base cutoff current VCB = 20 V, IE = 0 ICBO - - 100 µA Collector-emitter cutoff current VCE = 12 V, IB = 0.2µA 1.) ICEX - - 200 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 50 nA Emitter base cuttoff current VEB = 2 V, IC = 0 IEBO -- 2 5 µA Emitter base cuttoff current VEB = 1 V, IC = 0 IEBO -- 0 . 5 µA Notes: 1.) This Test assures V(BR)CE0 > 12V

Semiconductor Group 3 of 5 Draft B, September 1999 Electrical Characteristics (continued) Parameter Symbol Values Unit min. typ. max. DC Characteristics Base-Emitter forward voltage IE = 20 mA, IC = 0 VFBE -- 1 V DC current gain IC = 5 mA, VCE = 6 V hFE 55 100 170 - AC Characteristics Transition frequency IC = 15 mA, VCE = 5 V, f = 500 MHz IC = 15 mA, VCE = 8 V, f = 500 MHz fT 6.5 7.5 GHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz CCB - 0.26 0.36 pF Collector-emitter capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz CCE -0 . 3 4 - p F Emitter-base capacitance VEB = 0.5V, VCB = vcb = 0, f = 1 MHz CEB -0 . 8 1 . 1 p F Noise Figure IC = 5 mA, VCE = 5 V, f = 2 GHz, ZS = ZSopt F - 2.4 2.9 dB Power gain I C = 15 mA, VCE = 5V, f = 2 GHz ZS = ZSopt , ZL= ZLopt Gma 1.) 13.5 14.5 - dB Transducer gain I C = 15 mA, VCE = 5 V, f = 2 GHz ZS = ZL = 50 Ω |S21e|2 10 11 - dB Notes.: 1) G S S kkma =− −21 12 12() , G S S ms = 21

Semiconductor Group 4 of 5 Draft B, September 1999 Order Instructions: Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level. Ordering Form: BFY182 (ql) (ql): Quality Level Ordering Example: Ordering Code: Q62702F1714 BFY182 ES For BFY182 in ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.infineon.com/products/discrete/hirel.htm - HiRel Discrete and Microwave Semiconductors www.infineon.com/products/discrete/hirel.htm Please contact also our marketing division : Tel.: ++89 234 24480 Fax.: ++89 234 28438 e-mail: martin.wimmers@infineon.com Address: Infineon -Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich

Semiconductor Group 5 of 5 Draft B, September 1999 Micro-X1 Package Published by Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich. Infineon Technologies AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Infineon Technologies Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office, Semiconductor Group. Infineon Technologies Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000).