BFX34 TTELEC | Alldatasheet

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Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourage s customers to verify that datasheets are current before placing orders. Semelab Limited Semelab Limited Semelab Limited Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4 JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 5526 12 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 5569 Issue 2 Page 1 of 3 BFX34

  • Silicon Epitaxial NPN Transistor
  • High Speed, Low Saturation Switch
  • Hermetic TO39 Package
  • Screening Options Available ABSOLUTE MAXIMUM RATINGS (T C = 25°C unless otherwise stated) VCBO Collector – Base Voltage 120V VCEO Collector – Emitter Voltage 60V VEBO Emitter – Base Voltage 6V IB Continuous Base Current 1.0A IC Continuous Collector Current 2A ICM Peak Repetitive Collector Current 5A PD Total Power Dissipation at TA = 25°C 870mW TC = 25°C 5W TJ Junction Temperature Range 200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters Max. Unit RθJA Thermal Resistance, Junction To Ambient 200 °C/W RθJC Thermal Resistance, Junction To Case 35 °C/W

Semelab Limited Semelab Limited Semelab Limited Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4 JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 5526 12 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 5569 Issue 2 Page 2 of 3 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise stated) Symbols Parameters Test Conditions Min. Typ. Max. Unit V(BR)CBO (1) Collector-Base Breakdown Voltage IC = 5mA V BE = 0 120 V(BR)CEO (1) Collector-Emitter Breakdown Voltage IC = 10mA I B = 0 60 VEBO (1) Emitter - Base Voltage IE = 1.0mA I C = 0 6 VCE(sat) (1) Collector-Emitter Saturation Voltage 0.4 1.0 VBE(sat) (1) Base-Emitter Saturation Voltage IC = 5A I B = 0.5A 1.3 1.6 V ICES Collector Cut-Off Current VCE = 60V V BE = 0 0.02 10 IEBO Emitter Cut-Off Current VEB = 4V I C = 0 0.05 10 µA IC = 1.0A V CE = 2V 100 IC = 1.5A V CE = 0.6V 75 hFE DC Current Gain IC = 2A V CE = 2V 40 80 150 DYNAMIC CHARACTERISTICS IC = 0.5A V CE = 5V fT Transition Frequency f = 20MHz 70 100 MHz Cobo Output Capacitance VCB = 10V f = 1.0MHz 40 100 Cibo Input Capacitance VEB = 0.5V f = 1.0MHz 300 500 pF ton Turn on Time VCC = 20V I C = 0.5A 0.6 toff Turn off Time IB1 = -IB2 = 50mA 1.2 µS Notes Notes Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2%

Semelab Limited Semelab Limited Semelab Limited Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4 JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 5526 12 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 5569 Issue 2 Page 3 of 3 MECHANICAL DATA Dimensions in mm (inches) 0.89 (0.035)max. 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 45° 6.10 (0.240) 6.60 (0.260) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 0.74 (0.029) 1.14 (0.045) TO 39 (TO -20 5AD) METAL PACKAGE Underside View Underside View Underside View Underside View PIN 1 - Emitter PIN 2 - Base PIN 3 - Collector