BFX34 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
■ SGS-THOMSON PREFERRED SALESTYPE ■ NPN TRANSISTOR
DESCRIPTION
The BFX34 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at high current levels make it ideal for power drivers, power amplifiers, switching power supplies and relay drivers inverters. INTERNAL SCHEMATIC DIAGRAM June 1997 TO-39 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (IE = 0) 120 V V CEO Collector-Emitter Voltage (IB = 0) 60 V V EBO Emitter-Base Voltage (IC = 0) 6 V IC Collector Current 5 A P tot Total Dissipation at Tcase ≤ 25 oC Tamb ≤ 25 oC 0.87 W W Tstg Storage Temperature -65 to 200 oC Tj Max. Operating Junction Temperature 200 oC
Thermal Resistance Junction-case Max Thermal Resistance Junction-amb Max 200 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE = 0) V CE = 60 V 0.02 10 µ A IEBO Emitter Cut-off Current (IC = 0) V EB = 4 V 0.05 10 µ A V (BR)CBO ∗ Collector-base Breakdown Voltage E = 0) IC = 5 mA 120 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage B = 0) IC = 100 mA 60 V V EBO ∗ Emitter-base Voltage (IC = 0) IE = 1 mA 6 V V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 5 A IB = 0.5 A 0.4 1 V V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 5 A IB = -0.5 A 1.3 1.6 V hFE ∗ DC Current Gain I C = 1 A VCE = 2 V IC = 1.5 A VCE = 0.6 V IC = 2 A VCE = 2 V 40 100 80 150 fT ∗ Transition Frequency I C = 0.5 A VCE = 5 V f = 20 MHz 70 100 MHz C EBO Emitter-base Capacitance IC = 0.5 A VEB = 5 V f = 1 MHz 300 500 pF C CBO Collector-base Capacitance IE = 0 VCB = 10 V f = 1 MHz 40 100 pF ton Turn-on Time I C = -0.5 A VCC = -20 V IB1 = -IB2 = -50 mA 0.6 0.25 µ s ton Turn-on Time 0.6 1.2 µ s ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % BFX34
DIM. mm inch A 12.7 0.500 B0 . 4 9 0 . 0 1 9 D6 . 6 0 . 2 6 0 E8 . 5 0 . 3 3 4 F9 . 4 0 . 3 7 0 G 5.08 0.200 H1 . 2 0 . 0 4 7 I0 . 9 0 . 0 3 5 L4 5 o (typ.) L G I D A F E B H P008B TO-39 MECHANICAL DATA BFX34
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . . . BFX34