BFW43 STMICROELECTRONICS | Alldatasheet

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The BFW43 is a silicon planar epitaxial PNP transistors in Jedec TO-18 metal case. It is designed for use in amplifiers where high voltage and high gain are necessary. In particular, its feature a V CEO of 150V are specified over a wide range of curent. INTERNAL SCHEMATIC DIAGRAM November 1997 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (IE = 0) -150 V V CEO Collector-Emitter Voltage (IB = 0) -150 V V EBO Emitter-Base Voltage (IC =0 ) - 6 V IC Collector Current -0.1 A P tot Total Dissipation at Tamb ≤ 25 oC at Tcase ≤ 25 oC 0.4 1.4 W W Tstg Storage Temperature -55 to 200 oC Tj Max. Operating Junction Temperature 200 oC TO-18

Thermal Resistance Junction-Case Max Thermal Resistance Junction-Ambient Max 125 438 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE =0 ) V CE =- 1 0 0V V CE =- 1 0 0V Tamb =1 2 5oC -0.2 -0.03 -10 -10 nA µ A V (BR)CBO ∗ Collector-Base Breakdown Voltage E =0 ) IC =- 1 0µ A- 1 5 0 V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage B =0 ) IC =- 2m A - 1 5 0 V V (BR)EBO ∗ Emitter-Base Breakdown Voltage (IC =0 ) IE =- 1 0µ A- 6 V V CE(sat)∗ Collector-Emitter Saturation Voltage IC =- 1 0m A I B = -1 mA -0.1 -0.5 V V BE(sat)∗ Base-Emitter Saturation Voltage IC =- 1 0m A I B = -1 mA -0.74 -0.9 V hFE ∗ DC Current Gain I C =- 1m A V CE =- 1 0V IC =- 1 0m A V CE =- 1 0V IC =- 1 0µ AV CE = -10 V Tamb =- 5 5oC 100 fT Transition Frequency V CE =- 1 0V f=2 0M H z IC =- 1m A IC =- 1 0m A 6 0

50 MHz

IE =0 V EB = -0.5 V f = 1MHz 20 25 pF C CBO Collector Base Capacitance IE =0 V CB =- 5V f=1 M H z 5 7 p F ∗ Pulsed: Pulse duration = 300µs, duty cycle≤ 1% DC Current Gain. Collector-emitter SaturationVoltage. BFW43

Base-emitter Saturation Voltage. Transition Frequency. BFW43

DIM. mm inch A 12.7 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 2.54 0.100 H 1.2 0.047 I 1.16 0.045 L4 5 o 45o L G I DA F E B H C TO-18 MECHANICAL DATA 0016043 BFW43

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsabilit y for the consequences of use of such information nor for any infringemen t of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise underany patent or patent rights of SGS-THOMSON Microelectr onics. Specifications mention ed in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectr onics products are not authorized for use as critical compon ents in life supportdevices or systems withoutexpre ss written approval of SGS-THOMSON Microelectonics.  1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserve d SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain- Sweden- Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... BFW43