BFT46

BFT46 PHILIPS | Alldatasheet

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Product specification File under Discrete Semiconductors, SC07 December 1997 DISCRETE SEMICONDUCTORS BFT46 N-channel silicon FET

Philips Semiconductors Product specification N-channel silicon FET BFT46

DESCRIPTION

Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose amplifiers in thick and thin-film circuits. PINNING Note :Drain and source are interchangeable. 1 = drain 2 = source 3 = gate Marking code BFT46 = M3p Fig.1 Simplified outline and symbol, SOT23. handbook, halfpage g d s Top view MAM385 QUICK REFERENCE DATA Drain-source voltage ±VDS max. 25 V Gate-source voltage (open drain) −VGSO max. 25 V Total power dissipation up to Tamb =4 0°CP tot max. 250 mW Drain current VDS = 10 V; VGS =0 IDSS > 0,2 mA < 1,5 mA Transfer admittance (common source) ID = 0,2 mA; VDS = 10 V; f = 1 kHz  yfs> 0,5 mS Equivalent noise voltage VDS = 10 V; ID = 200µA; B = 0,6 to 100 Hz V n < 0,5 µV

Philips Semiconductors Product specification N-channel silicon FET BFT46 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL RESISTANCE Note 1. Mounted on a ceramic substrate of 8 mm× 10 mm × 0,7 mm. CHARACTERISTICS Tj=2 5°C unless otherwise specified Drain-source voltage ±VDS max. 25 V Drain-gate voltage (open source) V DGO max. 25 V Gate-source voltage (open drain) −VGSO max. 25 V Drain current I D max. 10 mA Gate current I G max. 5 mA Total power dissipation up to Tamb =4 0°C (1) Ptot max. 250 mW Storage temperature range T stg −65 to+150 °C Junction temperature T j max. 150 °C From junction to ambient(1) R th j-a = 430 K/W Gate cut-off current −VGS = 10 V; VDS =0 −IGSS < 0,2 nA Drain current VDS = 10 V; VGS =0 IDSS > 0,2 mA < 1,5 mA Gate-source voltage ID =5 0µA; VDS = 10 V −VGS > 0,1 V < 1,0 V Gate-source cut-off voltage ID = 0,5 nA; VDS =1 0V −V(P)GS < 1,2 V y-parameters at f = 1 kHz; VDS = 10 V; VGS = 0; Tamb =2 5°C Transfer admittance  yfs > 1,0 mS Output admittance  yos < 10 µS VDS = 10 V; ID = 200µA; Tamb =2 5°C Transfer admittance  yfs > 0,5 mS Output admittance  yos < 5 µS Input capacitance at f = 1 MHz; VDS = 10 V; VGS = 0; Tamb =2 5°CC is < 5p F Feedback capacitance at f = 1 MHz; VDS = 10 V; VGS = 0; Tamb =2 5°CC rs < 1,5 pF Equivalent noise voltage VDS = 10 V; ID = 200µA; Tamb =2 5°C B = 0,6 to 100 Hz V n < 0,5 µV

Philips Semiconductors Product specification N-channel silicon FET BFT46 Fig.2 Power derating curve. handbook, halfpage Tamb (°C) Ptot (mW) 300 200 100 40 200 80 120 160 MDA245 Fig.3 Typical values. VDS = 10 V; Tj=2 5°C. handbook, full pagewidth 1.5 0.75 1.25 0.5 0.25 MDA272 VDS (V)VGS (V) ID (mA) − 0.1 V − 0.2 V − 0.3 V − 0.4 V VGS = 0 V max typ min

Philips Semiconductors Product specification N-channel silicon FET BFT46 Fig.4 Typical values. VDS =1 0V . handbook, halfpage 0.3 V ID (mA) 100 150 0.75 0.25 0.5 MDA273 Tj (°C) − VGS = 0 V 0.1 V 0.2 V Fig.5 Correlation between−V(P)GS and IDSS . VDS = 10 V; Tj=2 5°C. handbook, halfpage typ 0.5 −V(P)GS (V) at ID = 0.5 nA 1 1.5 1.25 0.5 0.25 0.75 MDA274 IDSS (mA) at VGS = 0 Fig.6  yfs  versus ID . VDS = 10 V; f = 1 kHz; Tamb =2 5°C. typ ID (mA) |yfs| (mS) 0.25 0.5 0.75 MDA269 Fig.7  yos  versus ID . VDS = 10 V; f = 1 kHz; Tamb =2 5°C. handbook, halfpage typ 0.25 |yos| (mS) ID (mA) 0.5 0.75 MDA270

Philips Semiconductors Product specification N-channel silicon FET BFT46 Fig.8  yos  versus VDS . ID = 0,4 mA; f = 1 kHz; Tamb =2 5°C. handbook, halfpage 3001 0 2 0 VDS (V) 103 102 MDA271 |yos| (µA/V) typ Fig.9 Typical values. VDS = 10 V; Tamb =2 5°C. handbook, halfpage

0 VGS (V)

(pF) −1 −2 −4−3 MDA266 Fig.10 Typical values. VDS = 10 V, Tamb =2 5°C. handbook, halfpage (pF) 1.5 0.5 −1 −2 −4−3 MDA267 Fig.11 IGSS versus Tj.−VGSS = 10V; VDS =0 . handbook, halfpage 15010050 IGSS (nA) typ 10−1 10−2 10−3 MDA268 Tj (°C)

Philips Semiconductors Product specification N-channel silicon FET BFT46 Fig.12 VDS = 10 V; ID = 0,2 mA; Tamb =2 5°C. handbook, full pagewidth104 103 102 typ 102 103 104 f (Hz)105 106 MDA264 e n (nV/ Hz) Fig.13 VDS = 10 V; ID = 0,2 mA; Tamb =2 5°C. handbook, full pagewidth104 103 102 10 10 2 103 104 f (Hz)105 106 MDA265 typ i n (fA/ Hz)

Philips Semiconductors Product specification N-channel silicon FET BFT46 PACKAGE OUTLINE UNIT A 1 max. bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 97-02-28 IEC JEDEC EIAJ mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 bp D e A Lp Q detail X H E E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface mounted package; 3 leads SOT23

Philips Semiconductors Product specification N-channel silicon FET BFT46 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.