BFS67 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFS67
DESCRIPTION
- Low Noise Figure NF = 4.5 dB TYP. @VCE = 5 V, IC = 2 mA, f = 500 MHz
- High Current-Gain—Bandwidth Product fT= 1 GHz TYP. @V CE = 5 V, IC = 2 mA, f = 500 MHz
APPLICATIONS
- For a wide range of RF applications such as: mixers and oscillators in TV tuners and RF communications equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous 25 mA ICM Collector Current-Peak 50 mA PC Collector Power Dissipation @TC=25℃ 0.3 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFS67
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.01 μA hFE-1 DC Current Gain IC= 2mA ; VCE= 1V 25 hFE-2 DC Current Gain IC= 25mA ; VCE= 1V 25 fT Current-Gain—Bandwidth Product IC= 2mA ; VCE= 5V; f= 500MHz 1 GHz fT Current-Gain—Bandwidth Product IC= 25mA ; VCE= 5V; f= 500MHz 1.6 GHz COB Output Capacitance IE= 0 ; VCB= 10V; f= 1MHz 0.8 1.5 pF Cre Feedback Capacitance IC= 1mA ; VCB= 5V; f= 1MHz 0.65 pF NF Noise Figure IC= 2mA ; VCE= 5V;RS= 50Ω f= 500MHz 4.5 dB isc Website：www.iscsemi.cn 2
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFS67 isc Website：www.iscsemi.cn