BFS520 SKTECHNOLGY | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

Description

Ultra high frequency low noise transistor, planar NPN silicon Epitaxial bipolar process. noise figure, large dynamic range and ideal current characteristics, the use of SOT mainly used in the VHF, UHF and CATV high frequency wideband low PACKAGE: SOT-323 Feature High gain:︱S e TYP . Value is 13dB @ V Low noise: NF TYP. Value is 1.8dB f T (TYP.) TYP. Value is 9GHz Absolute Maximum Ratings T A =25 PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature hFE Classification Classification A Marking hFE 60~100 Ultra high frequency low noise transistor, planar NPN silicon Epitaxial bipolar process. range and ideal current characteristics, the use of SOT 323 ultra compact chip package, mainly used in the VHF, UHF and CATV high frequency wideband low -noise amplifier Collector TYP . Value is 13dB @ V CE =8V，I C =40mA，f=0.9GHz TYP. Value is 1.8dB @ V CE =10V，I C =10mA，f=0.9GHz TYP. Value is 9GHz @ V CE =8V，I C =40mA，f=1GHz Unless Otherwise noted SYMBLE MAXIMUM V ALUE UNIT V CBO V CEO V EBO I C mA P D 150 mW T j 150 T stg -65 +150 ℃ B C D 90~140 130~180 170~250 250~300 Ultra high frequency low noise transistor, planar NPN silicon Epitaxial bipolar process. With high power gain, low 323 ultra compact chip package, Collector UNIT V V V mA mW E 250~300 BFS520 1 of 3 REV.08

ELECTRICAL CHARACTERISTICS (T PARAMETER Collector-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Transit frequency Output feedback capacitance Power gain Noise factor TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (T a =25 ℃ unless otherwise specified) SYMBLE MIN. TYP. MAX. UNIT V CBO V I CBO 0.1 μA I EBO 0.1 μA hFE* 50 150 300 f T GHz C re 0.65 pF | S e dB V NF 1.6 1.8 dB 1.8 2.0 V TEST CONDITION I C =1.0μA V CB =10V V EB =1V V CE =6V,I C =20mA V CE =6V,I C =20mA,f=1GHz V CB =8V,I E =0mA,f=1MHz V CE =6V,I C =20mA,f=0.9GHz V CE =6V,I C =5mA,f=0.9GHz V CE =6V,I C =20mA,f=0.9GHz BFS520 2 of 3 REV.08

REV.08