BFS520

BFS520 YFWDIODE | Alldatasheet

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1 / 7 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. NPN Transistor

FEATURES

Collector Current Capability IC=70mA Collector Emitter Voltage VCEO=15V High power gain Low noise figure High transition frequency MECHANICAL DATA Case: SOT-323 (SC-70-3) SOT-323(SC-70-3) Marking Code BFS520 N2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage V CBO Collector - Emitter Voltage V CEO Emitter - Base Voltage V EBO 2.5 Collector Current - Continuous I C 70 mA Collector Power Dissipation P C 300 mW Thermal Resistance From Junction To Soldering Point R θJS

190 W/℃

J 175 Storage Temperature Range T stg -65 to 150 V

2 / 7 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. ■ Electrical Characteristics Ta = 25℃ Note. G UM is the maximum unilateral power gain, assuming S is zero and G UM 10 log S 1 S –    1 S –  Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage V CBO Ic= 100 μA， I E = 0 20 Collector- emitter breakdown voltage V CEO Ic= 1 mA， I B = 0 15 Emitter - base breakdown voltage V EBO I E = 100μA， I C = 0 2.5 Collector-base cut-off current I CBO V CB = 20 V , I E = 0 50 Emitter cut-off current I EBO V EB = 2.5V , I C =0 100 Collector-emitter saturation voltage V CE(sat) I C = 70 mA, I B =7mA 0.5 Base - emitter saturation voltage V BE(sat) I C = 70 mA, I B =7mA 1.2 DC current gain h FE V CE = 6V, I C = 20mA 60 250 I C =20mA; V CE =6V; T amb =25°C; f=0.9GHz 15 I C =20mA; V CE =6V; T amb =25°C; f=2GHz 9 Insertion power gain |S I C =20mA; V CE =6V; T amb =25°C; f=0.9GHz 13 Gs = Gopt; I C = 5mA; V CE = 6V; Tamb = 25 °C;f = 0.9GHz 1.6 Gs = Gopt; I C = 20mA; V CE = 6V; Tamb = 25 °C;f = 0.9GHz 2.1 Gs = Gopt; I C = 5mA; V CE = 6V; Tamb = 25 °C;f = 2GHz 1.9 Output power at 1 dB gain compression P Ic = 20 mA; V CE = 6 V; R L = 50 Ω; f = 900 MHz; Tamb = 25 °C 17 Third order intercept point ITO (Note.1) 26 Collector capacitance C c V CB = 6V, I E e =0,f=1MHz 0.5 Emitter capacitance C e V EB = 0.5V, I C c =0,f=1MHz 1 Feedback capacitance C re V CB = 6V, I C =0,f=1MHz 0.4 Transition frequency f T V CE = 6V, I C = 20mA,f=1GHz,Tamb =25°C 9 GHz pF dB V V nA dBm Maximum unilateral power gain GUM Noise figure NF Note.1 I C = 20 mA; V CE = 6 V; R L = 50 Ω; f = 900 MHz; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at f(2p-q) = 898 MHz and at f(2q-p) = 904 MHz.

3 / 7 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. ■ Typical Characterisitics Fig.1 Power derating curve. handbook, halfpage 0 50 100 200 400 300 100 200 150 Ptot (mW) Ts ( o Fig.2 DC current gain as a function of collector current. V CE = 6 V; T j = 25 °C. handbook, halfpage 100 150 200 1 10 10 I C (mA) h FE Fig.3 Feedback capacitance as a function of collector-base voltage. I C = 0; f = 1 MHz. handbook, halfpage 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 2 4 6 8 10 V (V)CB Cre (pF) Fig.4 Transition frequency as a function of collector current. f = 1 GHz; T amb = 25 °C. 001011 fT (GHz) IC (mA) 3 V = 8 VCEV Fig.5 Maximum unilateral power gain as a function of collector current. V CE = 6 V; f = 900 MHz; T amb = 25 °C. handbook, halfpage 0 10 20 30 GUM (dB) I C (mA) 3 V = 6 VCEV Fig.6 Gain as a function of collector current. V CE = 6 V; f = 2 GHz; T amb = 25 °C. 0 10 20 30 MSG GUM Gmax gain (dB) IC (mA)

4 / 7 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. ■ Typical Characterisitics Fig.7 Gain as a function of frequency. I C = 5 mA; V CE = 6 V; T amb = 25 °C. handbook, halfpage 1 10 f (GHz) MSG GUM Gmax gain (dB) Fig.8 Gain as a function of frequency. I C = 20 mA; V CE = 6 V; T amb = 25 °C. 1 10 f (GHz) MSG GUM Gmax gain (dB) Fig.9 Minimum noise figure as a function of collector current. V CE = 6 V; T amb = 25 °C. handbook, halfpage 01011 IC (mA) F (dB)

900 MHz

500 MHz

f = 2 GHz Fig.10 Minimum noise figure as a function of frequency. V CE = 6 V; T amb = 25 °C. 011 F (dB) 5 mA I = 20 mAC f (GHz) Fig.11 Noise circle. I C = 5 mA; V CE = 6 V; f = 900 MHz; Z o = 50 Ω. 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 180° −135° −90° −45° 45° 90° 135° stability circle pot. unst. region F = 3 dB F = 2 dB F = 1.5 dB ΓOPT Fmin = 1. 1 dB

5 / 7 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. ■ Typical Characterisitics Fig.12 Noise circle. I C = 5 mA; V CE = 6 V; f = 2 GHz; Z o = 50 Ω. 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 180° −135° −90° −45° 45° 90° 135° ΓMS Gmax = 9.1 dB G = 7 dB G = 8 dB G = 8,5 dB ΓOPT Fmin = 1. 9 dB F = 3 dB F = 2.5 dB F = 2 dB Fig.13 Common emitter input reflection coefficient (S I C = 20 mA; V CE = 6 V; Z o = 50 Ω. handbook, full pagewidth 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 180° −135° −90° −45° 45° 90° 135°

3 GHz

40 MHz

Fig.14 Common emitter forward transmission coefficient (S I C = 20 mA; V CE = 6 V. 180° −135° −90° −45° 45° 90° 135°

6 / 7 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. ■ Typical Characterisitics Fig.15 Common emitter reverse transmission coefficient (S I C = 20 mA; V CE = 6 V. 0.5 0.4 0.3 0.2 0.1 180° −90° −135° −45° 45° 90° 135° 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 180° −135° −90° −45° 45° 90° 135° Fig.16 Common emitter output reflection coefficient (S I C = 20 mA; V CE = 6 V; Z o = 50 Ω.

7 / 7 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. UNIT max bp c D E e1 HE Lp Q wv mm 0.11.1 0.8 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 0.65 e 1.3 2.2 2.0 0.23 0.13 0.20.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 w M bp D e A B Lp Q detail X c HE E v M A A B y 0 1 2 mm scale A X 1 2 SOT-323