BFS20 SECOS | Alldatasheet
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Any changing of specification will not be informed individual BFS20 NPN Silicon Plastic-Encapsulate Transistor Power dissipation High Fequency Application. VHF Band Amplifier application RoHS Compliant Product PCM : 0.25 W Collector Current ICM : 25mA Collector-base voltage FEATURES Collector Base Emitter Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 K J C H L A B S GV 1 2 D Top View http://www.SeCoSGmbH.com Elektronische Bauelemente V(BR)CBO : 30 V Operating & storage junction temperature Tj, Tstg : - 55 O C ~ + 150 O C ELECTRICAL CHARACTERISTICS (Tamb=25℃ unles s other wise specifie d) Parameter Symbol Test co nditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO Ic= 100µA, IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 4 V Collector cut-off current ICBO V CB=20V, IE=0 0.1 µA Collector cut-off current ICEO V CE=15V, IB=0 0.1 µA Collector cut-off current IEBO V EB=4V, IC=0 0.1 µA DC current gain hFE V CE=10V, IC= 7mA 40 120 Collector-emitter saturation voltage VCE(sat) I C=10 mA, IB=1mA 0.3 V Base-emitter voltage VBE(on) I C=7mA, VCE=10V 0.9 V Transition frequency fT VCE= 10V, IC=5mA f = 100MHz
275 MHz
01-Jun-2002 Rev. A Page 1 of 1 A suffix of "-C" specifies halogen & lead-free