BFS17S

BFS17S INFINEON | Alldatasheet

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/G01 For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA VPS05604 EHA07196 6 54 321 C1 E2 B2 C2E1B1 TR1 TR2 Type Marking Pin Configuration Package BFS17S MCs 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 V Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2.5 Collector current IC 25 mA Peak collector current, f = 10 MHz ICM 50 Total power dissipation TS /G01 93 °C 1) Ptot 280 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point2) RthJS /G01 240 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics a TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 15 - - V Collector-base cutoff current VCB = 10 V, IE = 0 VCB = 25 V, IE = 0 ICBO 0.05 µA Emitter-base cutoff current VEB = 2.5 V, IC = 0 IEBO - - 100 DC current gain IC = 2 mA, VCE = 1 V IC = 25 mA, VCE = 1 V hFE 150 Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA VCEsat - 0.1 0.4 V

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics Transition frequency IC = 2 mA, VCE = 5 V, f = 200 MHz IC = 25 mA, VCE = 5 V, f = 200 MHz fT 1.3 1.4 2.5 GHz Collector-base capacitance VCB = 5 V, f = 1 MHz Ccb - 0.55 0.8 pF Collector-emitter capacitance VCE = 5 V, f = 1 MHz Cce - 0.13 - Input capacitance VEB = 0.5 V, IC = 0 , f = 1 MHz Cibo - 1.45 - Output capacitance VCE = 5 V, VBE = 0 , f = 1 MHz Cobs - - 1.5 Noise figure IC = 2 mA, VCE = 5 V, f = 800 MHz, ZS = 0 /G01 F - 3.5 5 dB Transducer gain IC = 20 mA, VCE = 5 V, ZS = ZL = 50/G01 , f = 500 MHz |S21e|2 - 12,7 - Linear output voltage IC = 14 mA, VCE = 5 V, dim = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50/G01 V01=V02 - 100 - mV Third order intercept point IC = 200 mA, VCE = 8 V, ZS=ZSopt , ZL=ZLopt , f = 900 MHz IP3 - 23 - dBm

Total power dissipation Ptot = f (TS ) 0 20 40 60 80 100 120 °C 150 TS 100 120 140 160 180 200 220 240 mW 300 P tot Permissible Pulse Load R thJS = f (tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 Ptotmax / PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Collector-base capacitance Ccb = f (VCB ) f = 1MHz 0 4 8 12 16 20 V 26 VCB 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 pF 1.3 C cb Transition frequency fT = f (IC) V CE = Parameter 0 5 10 15 20 mA 30 IC 0.0 0.5 1.0 1.5 2.0 GHz 3.0 fT 10V 0.7V