BFS17P

BFS17P_11 INFINEON | Alldatasheet

Document overview

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Technical content

• For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
• Pb-free (RoHS compliant) package ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFS17P MCs 1 = B 2 = E 3 = C SOT23 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 V Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2.5 Collector current IC 25 mA Peak collector current ICM 50 Total power dissipation1) TS ≤ 55 °C Ptot 280 mW Junction temperature TJ 150 °C Ambient temperature TA -65 ... 150 Storage temperature TStg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS ≤ 340 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage I C = 1 mA, IB = 0 V(BR)CEO 15 - - V Collector-base cutoff current VCB = 10 V, IE = 0 VCB = 25 V, IE = 0 ICBO 0.05 µA Emitter-base cutoff current V EB = 2.5 V, IC = 0 IEBO - - 100 DC current gain IC = 2 mA, VCE = 1 V, pulse measured IC = 25 mA, VCE = 1 V, pulse measured hFE 150 Collector-emitter saturation voltage I C = 10 mA, IB = 1 mA VCEsat - 0.1 0.4 V

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 2 mA, VCE = 5 V, f = 200 MHz IC = 25 mA, VCE = 5 V, f = 200 MHz fT 1.3 1.4 2.5 GHz Collector-base capacitance VCB = 5 V, f = 1 MHz, VBE = 0 , emitter grounded Ccb - 0.55 0.8 pF Collector emitter capacitance V CE = 5 V, f = 1 MHz, VBE = 0 , base grounded Cce - 0.27 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Ceb - 0.9 1.45 Minimum noise figure I C = 2 mA, VCE = 5 V, ZS = 50 Ω, f = 800 MHz NFmin - 3.5 5 dB Transducer gain IC = 20 mA, VCE = 5 V, ZS = ZL = 50Ω, f = 500 MHz |S21e|2 - 13 - dB Third order intercept point at output VCE = 5 V, IC = 20 mA, f = 800 MHz, ZS = ZSopt, ZL = ZLopt IP3 - 21.5 - dBm 1dB compression point IC = 20 mA, VCE = 5 V, ZS = ZL = 50Ω, f = 800 MHz P-1dB - 10 - -

Total power dissipation Ptot = ƒ(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 120 160 200 240 mW 320 Ptot Permissible Pulse Load RthJS = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/WRthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) f = 1 MHz 0 2 4 6 8 10 12 14 16 V 20 VCB, VEB 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 pF 1.2 CCB, CEB CCB CEB

Transition frequency fT= ƒ(IC) VCE = parameter 0 5 10 15 20 mA 30 IC 0.5 1.5 GHz fT 10V 0.7V

Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel EH s BCW66 Type code Pin 1 0.8 0.9 0.91.3 0.8 1.2

0.25 M BC

1.9 -0.05 +0.10.4 ±0.12.9 0.95 C B 0...8˚ 0.2 A 0.1 MAX. 1.3 ±0.1 10˚ MAX. M 2.4 ±0.15 ±0.11 A 0.15 MIN. 1) Lead width can be 0.6 max. in dambar area 3.15 2.65 2.13 0.9 0.2 1.15Pin 1 Manufacturer 2005, June Date code (YM)

81726 Munich, Germany

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