BFS17L

BFS17L ZETEX | Alldatasheet

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C SOT23 NPN SILICON PLANAR RF TRANSISTORS ISSUE 4 – MARCH 2001 PARTMARKING DETAILS — BFS17L - E1L BFS17H - E1H ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 25 V Collector-Emitter Voltage V CEO 15 V Emitter-Base Voltage V EBO 2.5 V Peak Pulse Current I CM 50 mA Continuous Collector Current I C 25 mA Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector Cut-Off Current ICBO 10 nA µ A VCB=10V, I E=0 VCB=10V, I E=0, Tamb = 100°C Static Forward Current Transfer Ratio hFE BFS17L 25 100 I C=2.0mA, V CE=1.0V BFS17H 70 200 I C=2.0mA, V CE=1.0V 20 125 I C=25mA, V CE=1.0V Transition Frequency fT 1.0 1.3 GHz GHz IC=2.0mA, V CE=5.0V f=500MHz I C=25mA, V CE=5.0V f=500MHz Feedback Capacitance -C re 0.85 pF I C=2.0mA, VCE=5V, f=1MHz Output Capacitance C obo 1.5 pF V CB=10V, f=1MHz Input Capacitance C ibo 2.0 pF V EB=0.5V, f=1MHz Noise Figure N 4.5 dB I C=2.0mA, V CE=5.0V RS=50 Ω , f=500MHz Intermodulation Distortion dim -45 dB I C=10mA, V CE=6.0V RL=37.5 Ω ,Tamb=25°C Vo=100mV at fp=183MHz Vo=100mV at fq=200MHz measured at f(2q-p) =217MHz BFS17L BFS17H B E Spice parameter data is available upon request for this device TBA

IC - Collector Current (mA) f T - (GHz) 1µ 10µ 10m100µ 1m IC - Collector Current (A) hFE v IC hFE - Norma lised Ga in 1000.1 f=400MHz 1000 VCE - (V) C RE v VCE C RE - (pF) 10 20 30 0.5 1.0 1.5 2.0 VCE =10V 11 0 VCE =10V VCE =5V 100m f=1MHz