BFS17-3 KEXIN | Alldatasheet
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www.kexin.com.cn 1 Transistors NPN Transistors BFS17 (KFS17) ■ Features
- Collector Current Capability IC=25mA
- Collector Emitter Voltage VCEO=15V ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 15 Emitter - Base Voltage VEBO 2.5 Collector Current - Continuous IC 25 Collector Current - Pulse ICP 50 Collector Power Dissipation PC 300 mW Thermal Resistance From Junction to Soldering Point RθJS 260 ℃/W Junction Temperature TJ 150 Storage Temperature Range Tstg -65 to 150 V mA ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 25 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 15 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 2.5 Collector-base cut-off current ICBO VCB= 25 V , IE= 0 100 Emitter cut-off current IEBO VEB= 2.5V , IC=0 100 Collector-emitter saturation voltage VCE(sat) IC=25 mA, IB=2.5 mA 0.5 Base - emitter saturation voltage VBE(sat) IC=25 mA, IB=2.5mA 1.2 VCE= 1V, IC= 2mA 25 90 VCE= 1V, IC= 25mA 25 90 Collector Capacitance CC VCB= 10V, IE=ie= 0,f=1MHz 1.5 Emitter Capacitance Ce VEB= 0.5V, IC=iC= 0,f=1MHz 2 Feedback Capacitance Cre VCE= 5V, IC=1mA,f=1MHz 0.65 Noise Figure NF VCE= 5V, IC= 2mA,RS=50Ω, f=500MHz 4.5 dB VCE= 5V, IC= 2mA, f=500MHz 1 VCE= 5V, IC= 25 mA, f=500MHz 1.6 pF Transition frequency fT GHz V V nA DC current gain hFE ■ Marking Marking E1* 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 1. Base 2. Emitter 3. Collector 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1
www.kexin.com.cn2 Transistors NPN Transistors BFS17 (KFS17) ■ Typical Characterisitics Fig.2 DC current gain as a function of collector current. VCE = 1 V; Tj = 25 °C. 100 0301 20 IC (mA) hFE Fig.3 Collector capacitance as a function of collector-base voltage. IE = ie = 0; f = 1 MHz; Tj = 25 °C. 2.0 1.6 1.2 0.4 Cc (pF) VCB (V)10 0.8 Fig.4 Transition frequency as a function of collector current. VCE = 5 V; f = 500 MHz; Tj = 25 °C. 0 10 20 30 IC (mA) fT (GHz) Fig.5 Minimum noise figure as a function of collector current. VCE = 5 V; RS = 50 Ω; f = 500 MHz; Tj = 25 °C. 124 8 F 16 20 IC (mA)