BFR96 ETC1 | Alldatasheet
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Planeta JSC Planeta, 2/13, Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia E l e c t r o n i c c o m p a n y Ph/Fax: +7 (81622) 3-17-36, 3-32-86 E-mail: planeta@novgorod.net http://www.planetasemi.com BFR96 N-P-N bipolar silicon RF transistor in plastic package SOT-37 5.5max 1.5max 5.5max 5.2max 1.0max 9.0max Ratings Symbol Parameter, unit Limits VCBO Collector- base voltage, V 20 VCEO Collector- emitter voltage, V 15 VEBO Emitter- base voltage, V 3 IC Collector current, mA 75 Ptot Power dissipation, mW 700 Characteristics (T A = 25°C) Limits Symbol Parameter, unit, test conditions min max fT Transition frequency, GHz, IE=50mA, VCB=10V 3.2 hFE DC current gain, IE=50mA, VCB=10V ICBO Collector cut-off current, nA, IE= 0mA, VCB=10V 100 GPS Power gain, dB, IE=50mA, VCE=10V, f=500MHz 13.0 F Noise figure, dB IE=50mA, VCE=10V, f=500MHz 4.0 CC Collector capacitance, pF, VCB=10V, f= 1MHz 2.0 Pinouts: 1- Base, 2- Collector, 3-Emitter