BFR93AW ISC | Alldatasheet
Document overview
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Technical content
SiliconNPNRFPowerTransistor BFR93AW www.iscsemi.com 1
FEATURES
- High powergain
- Goldmetallization ensures excellent reliability
APPLICATIONS
- Itisdesigned forusein RFamplifiers,mixersand oscillators with signalfrequencies up to1GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 20 V VCEO Collector-EmitterVoltage 12 V VEBO Emitter-BaseVoltage 2 V IC CollectorCurrent-Continuous 90 mA PC CollectorPowerDissipation @TC<93℃ 300 mW TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃ ELECTRICALCHARACTERISTICS （TC=25℃ unlessotherwise specified） SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT ICBO CollectorCutoffCurrent VCB=10V;IE=0 - - 100 nA IEBO EmitterCutoffCurrent VEB=2V;IC=0 - - 10 μA hFE DCCurrentGain IC=7mA;VCE=3V 70 - 140 - fT Current-Gain—BandwidthProduct IC=7mA;VCE=3V 4.0 4.5 - GHz |S21e|2 InsertionPowerGain IC=5mA;VCE=3V;f=1GHz - 11 - dB NF NoiseFigure IC =5mA,VCE =3V,f=1GHz - 1.6 - dB
SiliconNPNRFPowerTransistor BFR93AW www.iscsemi.com 2 PACKAGEOUTLINE(UNIT:MM): PRODUCTDISCLAIMER ISCreserves the rightstomake changes ofthe contentherein the datasheetat anytimewithout notification.The information containedherein ispresented only asaguide forthe applicationsof our products. ISCproductsareintendedforusageingeneralelectronicequipment.Theproductsarenotdesignedfor usein equipment whichrequire specialized quality and/orreliability,orinequipmentwhichcouldhave applicationsin hazardous environments,aerospaceindustry,ormedicalfield.Pleasecontactus ifyou intend ourproducts to beusedin thesespecial applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsanyand allliability,including without limitationspecial,consequentialorincidentaldamages. Itis strictly prohibitedtoreprint orcopypartorallofthis datasheet withoutpermissionfrom ISC.