BFR93AF VISHAY | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 4

Technical content

Features

  • High power gain  High transition frequency  Low noise figure

Applications

Wide band amplifier up to GHz range. Mechanical Data Typ: BFR93AF Case: Plastic case (SOT 490) Weight: 2.5 mg Pinning: 1 = Collector, 2 = Base, 3 = Emitter Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Maximum Thermal Resistance 1) on glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35 µm Cu Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Part Marking Package BFR93AF R2 SOT490 Parameter Test condition Symbol Value Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 2 V Collector current IC 50 mA T otal power dissipation Tamb ≤ 60 °C Ptot 200 mW Junction temperature Tj 150 °C Storage temperature range Tstg - 65 to + 150 °C Parameter Test condition Symbol Value Unit Junction ambient 1/ RthJA 450 K/W Parameter Test condition Symbol Min Ty p. Max Unit Collector cut-off current VCE = 20 V, VBE = 0 ICES 100 µA Collector-base cut-off current VCB = 10 V, IE = 0 ICBO 100 nA

Rev. 2, 23-Sep-02 www.vishay.com VISHA YBFR93AF Vishay Semiconductors Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified Emitter-base cut-off current VEB = 2 V, IC = 0 IEBO 10 µA Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 12 V Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA VCEsat 0.1 0.4 V DC forward current transfer ratio VCE = 5 V , IC = 30 mA hFE 40 90 150 Parameter Tes t co nd iti on Symbol Min Typ. Max Unit Transition frequency VCE = 5 V, IC = 30 mA, f = 500 MHz fT 6 GHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 0.45 pF Collector-emitter capacitance VCE = 5 V, f = 1 MHz Cce 0.2 pF Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 1.5 pF Noise figure VCE = 8 V , IC = 5 mA, ZS = 50 Ω, f = 800 MHz F 1.6 dB VCE = 8 V , IC = 25 mA, ZS = 50 Ω, f = 800 MHz F 2.1 dB Power gain VCE = 8 V, ZS = 50 Ω, ZL = ZLopt, IC = 25 mA, f = 800 MHz Gpe 15 dB Transducer gain VCE = 8 V , IC = 25 mA, f = 800 MHz, ZO = 50 Ω |S21e|2 14 dB Linear output voltage - two tone intermodulation test VCE = 8 V , IC = 25 mA, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Ω V1 = V2 260 mV Third order intercept point VCE = 8 V, IC = 25 mA, f = 800 MHz IP3 31 dBm Parameter Tes t co nd iti on Symbol Min Typ. Max Unit

Rev. 2, 23-Sep-02 Vishay Semiconductors www.vishay.com Package Dimensions in mm or Inches (mm) 16866 ISO Method E

Rev. 2, 23-Sep-02 www.vishay.com VISHA YBFR93AF Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Seminconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423