BFR92ALT1 MICROSEMI | Alldatasheet
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WWW.Microsemi .COM BFR92ALT1 RF & MICROWAVE TRANSISTORS R F P R O D U C T S D I V I S I O N D E S C R I PT I O ND E S C R I PT I O ND E S C R I PT I O ND E S C R I PT I O N The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com K E Y F E A T U R ES K E Y F E A T U R ES K E Y F E A T U R ES K E Y F E A T U R ES APPLICATIONS/BENEFITAPPLICATIONS/BENEFITAPPLICATIONS/BENEFITAPPLICATIONS/BENEFITSSSS ! LNA, Oscillator, Pre-Driver ABSOLUTE MAXIMUM RATINGS (TCASE = 25C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 2.0 V IC Device Current 25 mA PDISS Power Dissipation 273 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 to +150 C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 275 C/W BFR92ALT1 High FTau-4.5GHz Low noise-3.0dB@500MHz Low cost SOT23 package SOT-23 BFR92ALT1 STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25C) Symbol Test Conditions Min. Typ. Max. Units BVCBO IC = .1mA IE = 0 20 V BVCEO IC =10mA IB = 0 15 V ICBO VCB = 10V IE = 0 nA hFE VCB =10 V IC = 14 mA 40 DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25C) Symbol Test Conditions Min. Typ. Max. Units f = 1.0 MHz VCB = 10 V GHz F CBC FTau NF P 4.5 3.0 VCE = 10 V I = 14 mAC f = 500 MHz VCE = 1.5 V I = 3.0 mAC f = 500MHz dB 0.7