BFR92AF VISHAY | Alldatasheet

Document overview

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Technical content

Features

  • High power gain  Low noise figure  High transition frequency

Applications

Wide band amplifier up to GHz range. Mechanical Data Typ: BFR92AF Case: SOT-490 Plastic case Weight: approx. 2.5 mg Pinning: 1 = Collector, 2 = Base, 3 = Emitter Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Maximum Thermal Resistance 1) on glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35 µm Cu Part Marking Package BFR92AF P2 SOT -490 Parameter Test condition Symbol Value Unit Collector-base voltage V CBO 20 V Collector-emitter voltage V CEO 15 V Emitter-base voltage V EBO 2V Collector current I C 30 mA Total power dissipation T amb ≤ 60 °C P tot 200 mW Junction temperature T j 150 °C Storage temperature range T stg -65 to +150 °C Parameter Test condition Symbol Value Unit Junction ambient 1) RthJA 450 K/W

www.vishay.com Document Number 85098 Rev. 1.3, 30-Aug-04 VISHA YBFR92AF Vishay Semiconductors Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min Ty p. Max Unit Collector-emitter cut-off current V CE = 20 V, VBE = 0 I CES 100 µA Collector-base cut-off current V CB = 10 V, IE = 0 I CBO 100 nA Emitter-base cut-off current V EB = 2 V, IC = 0 I EBO 10 µA Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V (BR)CEO 15 V DC forward current transfer ratio V CE = 10 V, IC = 14 mA h FE 65 100 150

Rev. 1.3, 30-Aug-04 Vishay Semiconductors www.vishay.com Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified Package Dimensions in mm Parameter Test condition Symbol Min Typ. Max Unit Transition frequency V CE = 10 V, IC = 14 mA, f = 500 MHz fT 6G H z Collector-base capacitance V CB = 10 V, f = 1 MHz C cb 0.3 pF Collector-emitter capacitance V CE = 10 V, f = 1 MHz C ce 0.15 pF Emitter-base capacitance V EB = 0.5 V, f = 1 MHz C eb 0.65 pF Noise figure V CE = 10 V, IC = 2 mA, ZS = 50 Ω, f = 800 MHz F1 . 8 d B Power gain V CE = 10 V, ZS = 50 Ω, ZL = ZLopt, IC = 14 mA, f = 800 MHz Gpe 16.5 dB Transducer gain V CE = 10 V, IC = 14 mA, f = 800 MHz, ZO = 50 Ω |S21e|2 14 dB Linear output voltage - two tone intermodulation test VCE = 10 V, IC = 14 mA, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Ω V1 = V2 120 mV Third order intercept point V CE = 10 V, IC = 14 mA, f = 800 MHz IP3 24 dBm 16866 ISO Method E 0.4 (0.016) 0.5(0.016) 0.65(0.026) 1.15(0.045) 0.1 B 0.1 A 1.5 (0.059) 1.7 (0.066) 0.6 (0.023) 0.8 (0.031) 3 x 0.20 (0.008) 3 x 0.30 (0.012) 1.5 (0.059) 1.7 (0.066) 0.75 (0.029) 0.95 (0.037) 0.10 (0.004) 0.20 (0.008) 0.5 (0.016) 1.0 (0.039)

www.vishay.com Document Number 85098 Rev. 1.3, 30-Aug-04 VISHA YBFR92AF Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423