BFR92

BFR92 PHILIPS | Alldatasheet

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Product specification File under Discrete Semiconductors, SC14 September 1995 DISCRETE SEMICONDUCTORS BFR92 NPN 5 GHz wideband transistor

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92

DESCRIPTION

NPN transistor in a plastic SOT23 envelope primarily intended for use in RF wideband amplifiers and oscillators. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. PNP complement is BFT92. PINNING PIN DESCRIPTION Code: P1p 1 base 2 emitter 3 collector Fig.1 SOT23. fpage MSB003Top view QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V IC DC collector current − 25 mA Ptot total power dissipation up to T s =9 5°C; note 1 − 300 mW fT transition frequency I C = 14 mA; VCE = 10 V; f = 500 MHz; Tj=2 5°C 5 − GHz C re feedback capacitance I C = 2 mA; VCE = 10 V; f = 1 MHz 0.4 − pF G UM maximum unilateral power gain I C = 14 mA; VCE = 10 V; f = 500 MHz; Tamb =2 5°C 18 − dB F noise figure I C = 2 mA; VCE = 10 V; f = 500 MHz; Tamb =2 5°C; Zs = opt. 2.4 − dB Vo output voltage d im = −60 dB; IC = 14 mA; VCE = 10 V; R L =7 5Ω ; Tamb =2 5°C; f(p+q−r)= 493.25 MHz 150 − mV SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 2V IC DC collector current − 25 mA Ptot total power dissipation up to T s =9 5°C; note 1 − 300 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92 THERMAL RESISTANCE Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj=2 5°C unless otherwise specified. Notes 1. G UM is the maximum unilateral power gain, assuming S12 is zero and 2. Crystal mounted in a SOT37 envelope (BFR90). 3. d im = −60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL =7 5Ω ; Tamb =2 5°C; Vp =V o at dim = −60 dB; fp = 495.25 MHz; Vq =V o −6 dB; fq = 503.25 MHz; Vr =V o −6 dB; fr = 505.25 MHz; measured at f(p+q−r) = 493.25 MHz. SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-s thermal resistance from junction to soldering point up to Ts =9 5°C; note 1 260 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current I E = 0; VCB = 10 V −− 50 nA hFE DC current gain I C = 14 mA; VCE = 10 V 40 90 − fT transition frequency I C = 14 mA; VCE = 10 V; f = 500 MHz− 5 − GHz C c collector capacitance I E =ie = 0; VCB = 10 V; f = 1 MHz − 0.75 − pF C e emitter capacitance I C =ic = 0; VEB = 0.5 V; f = 1 MHz − 0.8 − pF C re feedback capacitance I C = 2 mA; VCE = 10 V; f = 1 MHz; Tamb =2 5°C − 0.4 − pF G UM maximum unilateral power gain (note 1) IC = 14 mA; VCE = 10 V; f = 500 MHz; Tamb =2 5°C − 18 − dB F noise figure (see Fig.2 and note 2) I C = 2 mA; VCE = 10 V; f = 500 MHz; Tamb =2 5°C; Zs = opt. − 2.4 − dB Vo output voltage note 3 − 150 − mV G UM 10 log S 21

1 S 11

–  1 S 22 –

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92 Fig.2 Intermodulation distortion test circuit. L 2=L 3=5 µH Ferroxcube choke, catalogue number 3122 108 20150. L1 = 4 turns 0.35 mm copper wire; winding pitch 1 mm; internal diameter 4 mm. handbook, halfpage MEA446 680 pF 300 680 pF 75 Ω input 75 Ω output 3.9 k L3390 820 650 pF DUT 24 V Ω Ω Ω ΩΩ Fig.3 Power derating curve. handbook, halfpage 0 50 100 200 400 300 100 200 MEA425 - 1 150 Ptot (mW) Ts (o C) Fig.4 DC current gain as a function of collector current. VCE = 10 V; Tj=2 5°C. handbook, halfpage 01 0 2 0 3 0 120 MCD074 hFE I (mA)C Fig.5 Collector capacitance as a function of collector-base voltage. IE =ie = 0; f = 1 MHz; Tj=2 5°C. handbook, halfpage 01 0 2 0 0.8 MEA428 0.6 0.4 0.2 C c (pF) V CB (V)

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92 Fig.6 Transition frequency as a function of collector current. VCE = 10 V; f = 500 MHz; Tj=2 5°C. handbook, halfpage 01 0 2 0 3 0 MEA444 I (mA)C fT (GHz) Fig.7 Gain as a function of frequency. IC = 14 mA; VCE = 10 V; Tamb =2 5°C. handbook, halfpage MEA427 102 103 104 f (MHz) gain (dB) G UM I S I12 Fig.8 Minimum noise figure as a function of frequency. IC = 2 mA; VCE = 10 V; Tamb =2 5°C; Zs = opt. handbook, halfpage MEA465 110 F (dB) –1 f (GHz) Fig.9 Minimum noise figure as a function of collector current. VCE = 10 V; f = 500 MHz; Tamb =2 5°C; Zs = opt. handbook, halfpage MEA424 02 0 51 01 5 F (dB) IC (mA)

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92 Fig.10 Noise circle figure. IC = 2 mA; VCE = 10 V; f = 500 MHz; Tamb =2 5°C. handbook, halfpage 02 0 4 0 8 0 MEA426 G (mS)S B S (mS) 100 2.4 F = 5 dB 4.5 3.53

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92 handbook, full pagewidth MEA429 0.2 0.5 0.2 0.5 + j – j 500 200 10.2 10 520.5

1000 MHz

Fig.11 Common emitter input reflection coefficient (S11). IC = 14 mA; VCE = 10 V; Tamb =2 5°C. Zo =5 0Ω . handbook, full pagewidth + ϕ − ϕ 30° 60° 90° 120° 150° 180° 150° 120° 90° 60° 30° MEA431 20 12 200 500 800 Fig.12 Common emitter forward transmission coefficient (S21). IC = 14 mA; VCE = 10 V; Tamb =2 5°C.

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92 handbook, full pagewidth MEA432 + ϕ − ϕ 30° 60° 90° 120° 150° 180° 150° 120° 90° 60° 30° 0.100.05 200 500 800 0.15 Fig.13 Common emitter reverse transmission coefficient (S12). IC = 14 mA; VCE = 10 V; Tamb =2 5°C. handbook, full pagewidth MEA430 0.2 0.5 0.2 0.5 + j – j 500 10.2 10 520.5 Fig.14 Common emitter output reflection coefficient (S22). IC = 14 mA; VCE = 10 V; Tamb =2 5°C. Zo =5 0Ω .

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92 PACKAGE OUTLINE UNIT A 1 max. bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 97-02-28 IEC JEDEC EIAJ mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 bp D e A Lp Q detail X H E E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface mounted package; 3 leads SOT23

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.