BFR54

BFR540 PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of 1995 September

1999 Aug 23

NPN 9 GHz wideband transistor

1999 Aug 23 2

Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540

FEATURES

• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.

DESCRIPTION

The BFR540 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems. The transistor is encapsulated in a plastic SOT23 envelope. PINNING PIN DESCRIPTION Code: N29 1 base 2 emitter 3 collector Fig.1 SOT23. fpage MSB003Top view QUICK REFERENCE DATA Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 20 V VCES collector-emitter voltage R BE =0 −− 15 V IC DC collector current −− 120 mA Ptot total power dissipation up to T s = 70°C; note 1 −− 500 mW hFE DC current gain I C = 40 mA; VCE = 8 V 60 120 250 C re feedback capacitance I C =ic = 0; VCB = 8 V; f = 1 MHz − 0.6 − pF fT transition frequency I C = 40 mA; VCE = 8 V; f = 1 GHz − 9 − GHz G UM maximum unilateral power gain IC = 40 mA; VCE = 8 V; Tamb = 25°C; f = 900 MHz − 14 − dB IC = 40 mA; VCE = 8 V; Tamb = 25°C; f = 2 GHz − 7 − dB S212 insertion power gain I C = 40 mA; VCE = 8 V; Tamb = 25°C; f = 900 MHz 12 13 − dB F noise figure Γs = Γopt;IC = 10 mA; VCE = 8 V; Tamb =2 5°C; f = 900 MHz − 1.3 1.8 dB Γs = Γopt;IC = 40 mA; VCE = 8 V; Tamb =2 5°C; f = 900 MHz − 1.9 2.4 dB Γs = Γopt;IC = 10 mA; VCE = 8 V; Tamb =2 5°C; f = 2 GHz − 2.1 − dB

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Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCES collector-emitter voltage R BE =0 − 15 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 120 mA Ptot total power dissipation up to T s =7 0°C; note 1 − 500 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-s from junction to soldering point see note 1 260 K/W

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Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 CHARACTERISTICS Tj = 25°C unless otherwise specified. Notes 1. G UM is the maximum unilateral power gain, assuming S12 is zero and 2. IC = 40 mA; VCE =8 V ;RL =5 0Ω ; Tamb =2 5°C; f = 900 MHz; fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 898 MHz and f(2q−p) = 904 MHz. 3. dim = −60 dB (DIN 45004B); Vp =V O ;Vq =V O −6 dB; fp = 795.25 MHz; VR =V O −6 dB; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p+q-r)= 793.25 MHz; preliminary data. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current I E = 0; VCB = 8 V −− 50 nA hFE DC current gain I C = 40 mA; VCE = 8 V 60 120 250 C e emitter capacitance I C = ic = 0; VEB = 0.5 V; f = 1 MHz − 2 − pF C c collector capacitance I E =ie = 0; VCB = 8 V; f = 1 MHz − 0.9 − pF C re feedback capacitance I C = 0; VCB = 8 V; f = 1 MHz − 0.6 − pF fT transition frequency I C = 40 mA; VCE = 8 V; f = 1 GHz − 9 − GHz G UM maximum unilateral power gain (note 1) IC = 40 mA; VCE = 8 V; Tamb = 25°C; f = 900 MHz − 14 − dB IC = 40 mA; VCE = 8 V; Tamb = 25°C; f = 2 GHz − 7 − dB S212 insertion power gain I C = 40 mA; VCE = 8 V; Tamb = 25°C; f = 900 MHz 12 13 − dB F noise figure Γs = Γopt;IC = 10 mA; VCE = 8 V; Tamb =2 5°C; f = 900 MHz − 1.3 1.8 dB Γs = Γopt;IC = 40 mA; VCE = 8 V; Tamb =2 5°C; f = 900 MHz − 1.9 2.4 dB Γs = Γopt;IC = 10 mA; VCE = 8 V; Tamb =2 5°C; f = 2 GHz − 2.1 − dB PL1 output power at 1 dB gain compression IC = 40 mA; VCE =8 V ;RL =5 0Ω ; Tamb =2 5°C; f = 900 MHz − 21 − dBm ITO third order intercept point note 2 − 34 − dBm Vo output voltage (note 3) I C = 40 mA; VCE =8 V ; ZL =Z S =7 5Ω ;Tamb =2 5°C − 550 − mV G UM 10 S 21 1S 11 2–() 1S 22 2–()

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Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 Fig.2 Power derating curve. 1/2 page (Datasheet) 22 mm s 0 50 100 200 200 MEA398 - 1 150 T ( C)o P tot (mW) 400 600 Fig.3 DC current gain as a function of collector current. VCE = 8 V. handbook, halfpage MRA687 250 100 150 200 hFE IC (mA)10−110−2 1 10 102 Fig.4 Feedback capacitance as a function of collector-base voltage. IC = 0; f = 1 MHz. handbook, halfpage MRA688 1.0 0.8 0.6 0.4 0.2 0 048 1 2 C re (pF) VCB (V) Fig.5 Transition frequency as a function of collector current. Tamb =2 5°C; f = 1 GHz. handbook, halfpage MRA689 fT (GHz) IC (mA) 10−1 11 0 1 0 2 VCE = 8V VCE = 4V

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Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.6 Gain as a function of collector current. VCE = 8 V; f = 900 MHz. handbook, halfpage 02 0 IC (mA)40 60 gain (dB) MRA690 G UM G maxMSG Fig.7 Gain as a function of collector current. VCE = 8 V; f = 2 GHz. handbook, halfpage 02 0 IC (mA)40 60 gain (dB) MRA691 G UM G max Fig.8 Gain as a function of frequency. VCE = 8 V; Ic = 10 mA. handbook, halfpage50 gain (dB) MRA692 102 103 104 f (MHz) MSG G UM G max Fig.9 Gain as a function of frequency. VCE = 8 V; Ic = 40 mA. handbook, halfpage50 gain (dB) MRA693 102 103 104 f (MHz) MSG G UM G max

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Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 Fig.10 Minimum noise figure and associated available gain as functions of collector current. VCE = 8 V. handbook, halfpage5 2 5 G ass (dB) Fmin (dB) IC (mA) MRA698 1 10210

2000 MHz

1000 MHz

900 MHz

500 MHz

f = 900 MHz Fmin G ass Fig.11 Minimum noise figure and associated available gain as functions of frequency. VCE = 8 V. handbook, halfpage5 2 5 G ass (dB) Fmin (dB) f (MHz) MRA699 102 104103 G ass 40 mA 10 mA Fmin 40 mAIC = 10 mA handbook, full pagewidth MRA700 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 F = 1.5 dB 1 2 5 180° −135° −90° −45° 45° 90° 135° F = 2 dB F = 3 dB Fmin = 1.3 dB ΓOPT stability circle pot. unst. region Fig.12 Noise circle figure. Zo =5 0Ω . VCE = 8 V; IC = 10 mA; f = 900 MHz.

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Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 Fig.13 Noise circle figure. Zo =5 0Ω . VCE = 8 V; IC = 10 mA; f = 2000 MHz. handbook, full pagewidth MRA701 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.5 0.2 0.5 1 2 5 180° −135° −90° −45° 45° 90° 135° F = 2.5 dB F = 3 dB F = 4 dB G = 7 dBG = 6 dB G = 5 dB Γ MS Fmin = 2.1 dB G max = 7.8 dB Γ OPT

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Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 Fig.14 Common emitter input reflection coefficient (S11). handbook, full pagewidth MRA694 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5

3 GHz

180° −135° −90° −45° 45° 90° 135°

40 MHz

VCE = 8 V; IC = 40 mA. Zo =5 0Ω . Fig.15 Common emitter forward transmission coefficient (S21). VCE = 8 V; IC = 40 mA. handbook, full pagewidth MRA695 50 40 30 20 10 180° −135° −90° −45° 45° 90° 135°

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Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 Fig.16 Common emitter reverse transmission coefficient (S12). VCE = 8 V; IC = 40 mA. handbook, full pagewidth MRA696 0.5 0.4 0.3 0.2 0.1 180° −90° −135° −45° 45° 90° 135° handbook, full pagewidth MRA697 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° −135° −90° −45° 45° 90° 135° Fig.17 Common emitter output reflection coefficient (S22). VCE = 8 V; IC = 40 mA. Zo =5 0Ω .

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Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 PACKAGE OUTLINE UNIT A 1 max. bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 97-02-28 IEC JEDEC EIAJ mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 bp D e A Lp Q detail X H E E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface mounted package; 3 leads SOT23

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Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

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Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 NOTES

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Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 NOTES

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Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 NOTES

© Philips Electronics N.V. SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Internet: http://www.semiconductors.philips.com 1999 67 Philips Semiconductors – a worldwide company For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

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