BFR183W_07 INFINEON | Alldatasheet

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Technical content

NPN Silicon RF Transistor*

  • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
  • fT = 8 GHz, F = 0.9 dB at 900 MHz
  • Pb-free (RoHS compliant) package1)
  • Qualified according AEC Q101 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR183W RHs 1=B 2=E 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 65 mA Base current IB 5 Total power dissipation2) TS ≤ 56 °C Ptot 450 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point3) RthJS ≤ 210 K/W 1Pb-containing package may be available upon special request 2TS is measured on the collector lead at the soldering point to the pcb 3For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage I C = 1 mA, IB = 0 V(BR)CEO 12 - - V Collector-emitter cutoff current VCE = 20 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain- IC = 15 mA, VCE = 8 V, pulse measured hFE 70 100 140 -

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 25 mA, VCE = 8 V, f = 500 MHz fT 6 8 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Ccb - 0.46 0.7 pF Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Cce - 0.24 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Ceb - 1 - Noise figure IC = 5 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz IC = 5 mA, VCE = 8 V, ZS = ZSopt, f = 1.8 GHz F 0.9 1.4 dB Power gain, maximum stable1) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Gms - 18.5 - dB Power gain, maximum available2) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Gma - 12 - dB Transducer gain IC = 15 mA, VCE = 8 V, ZS = ZL = 50 Ω , f = 900 MHz IC = 15 mA, VCE = 8 V, ZS = ZL = 50 Ω , f = 1.8 MHz |S21e|2 9.5 dB 1Gms = |S21 / S12| 2Gma = |S21e / S12e| (k-(k²-1)1/2),

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: NF = 0.80799 - ISE = 16.818 fA NR = 0.99543 - ISC = 1.3559 fA IRB = 0.43801 mA RC = 0.20486 Ω MJE = 0.45354 - VTF = 0.50905 V CJC = 460.11 fF XCJC = 0.053823 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K BF = 115.98 - IKF = 0.14562 A BR = 10.016 - IKR = 0.013483 A RB = 2.5426 Ω RE = 1.3435 - VJE = 1.0792 V XTF = 0.36823 - PTF = 0 deg MJC = 0.3 - CJS = 0 fF XTB = 0 - FC = 0.54852 IS = 1.0345 fA VAF = 14.772 V NE = 1.2149 - VAR = 3.4276 V NC = 0.85331 - RBM = 1.0112 Ω CJE = 23.077 fF TF = 22.746 ps ITF = 1.8773 mA VJC = 1.1967 V TR = 1.0553 ns MJS = 0- XTI = 3- All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: LBI = 0.57 nH LBO = 0.4 nH LEI = 0.43 nH LEO = 0.5 nH LCI = 0 nH LCO = 0.41 nH CBE = 61 fF CCB = 101 fF CCE = 175 fF For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com Valid up to 6GHz

Total power dissipation Ptot = ƒ(TS) 0 20 40 60 80 100 120 °C 150 TS 100 150 200 250 300 350 400 mW 500 Ptot Permissible Pulse Load RthJS = ƒ(tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 K/WRthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 1.25 ±0.1 0.1 MAX. 2.1±0.1 0.15 +0.1 -0.05 0.3+0.1 ±0.10.9 A ±0.22 -0.05 0.650.65 M 0.1 0.1 MIN. 0.1 M0.2 A 0.24 2.15 1.1 2.3 Pin 1 Pin 1 2005, June Date code (YM) BCR108W Type code 0.6 0.8 1.6 0.65 0.65 Manufacturer

81726 München, Germany

© Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.