BFR106 INFINEON | Alldatasheet

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/G01 For low noise, high-gain amplifiers /G01 For linear broadband amplifiers /G01 Special application: antenna amplifiers /G01 Complementary type: BFR194 (PNP) VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR106 R7s 1 = B 2 = E 3 = C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 3 Collector current IC 100 mA Base current IB 12 Total power dissipation, TS /G01 73 °C 1) Ptot 700 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point2) RthJS /G01 110 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 15 - - V Collector-emitter cutoff current VCE = 20 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 2 V, IC = 0 IEBO - - 10 µA DC current gain IC = 70 mA, VCE = 8 V hFE 40 100 220 -

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics (verified by random sampling) Transition frequency IC = 70 mA, VCE = 8 V, f = 500 MHz fT 3.5 5 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 0.95 1.5 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz Cce - 0.25 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 4.4 - Noise figure IC = 20 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz F 2.5 dB Power gain, maximum available 1) IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Gma 12.5 7.5 Transducer gain IC = 70 mA, VCE = 8 V, ZS = ZL = 50/G01 , f = 900 MHz f = 1.8 GHz |S21e|2 10.5

SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.8998 fA VAF = 15 V NE = 1.3235 - VAR = 4.1613 V NC = 1.4602 - RBM = 1.0893 /G01 CJE = 5.0933 fF TF = 35.78 ps ITF = 62.059 mA VJC = 0.81533 V TR = 1.2466 ns MJS = 0- XTI = 3 - BF = 132.75 - IKF = 0.44125 A BR = 11.407 - IKR = 0.010016 A RB = 1.2652 /G01 RE = 1.1351 VJE = 0.85909 V XTF = 0.44444 - PTF = 0 deg MJC = 0.46849 - CJS = 0f F XTB = 0- FC = 0.92887 - NF = 0.89608 - ISE = 71.424 fA NR = 0.91008 - ISC = 2.0992 fA IRB = 0.028135 mA RC = 0.27485 /G01 MJE = 0.69062 - VTF = 0.10681 V CJC = 2327.8 fF XCJC = 0.14496 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: LBI = 0.85 nH LBO = 0.51 nH LEI = 0.69 nH LEO = 0.61 nH LCI = 0n H LCO = 0.43 nH C BE = 73 fF C CB = 84 fF C CE = 165 fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm

Total power dissipation Ptot = f (TS ) 0 20 40 60 80 100 120 °C 150 TS 100 200 300 400 500 600 mW 800 P tot TS Permissible Pulse Load R thJS = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 Ptotmax / PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Collector-base capacitance Ccb = f (VCB ) f = 1MHz 0 4 8 12 16 V 22 VCB 0.0 0.4 0.8 1.2 1.6 2.0 2.4 pF 3.2 C cb Transition frequency fT = f (IC) V CE = Parameter 0 20 40 60 80 mA 120 IC 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 GHz 6.0 fT 0.7V Power Gain G ma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 0 20 40 60 80 mA 120 IC dB G 10V 0.7V Power Gain G ma , Gms = f(IC) f = 1.8GHz VCE = Parameter 0 20 40 60 80 mA 120 IC 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 dB 9.0 G 0.7V

Intermodulation Intercept Point IP3=f(IC ) (3rd order, Output, ZS=ZL=50/G01 ) VCE = Parameter, f = 900MHz 0 10 20 30 40 50 60 70 80 mA 100 IC dBm IP3 Power Gain G ma , G ms = f(VCE ):_____ f = Parameter 0 2 4 6 8 V 12 VCE dB G 0.9GHz 1.8GHz 0.9GHz 1.8GHz IC =70mA Power Gain |S21|2= f(f) V CE = Parameter f dB S21 10V1V0.7V IC =70mA Power Gain G ma , G ms = f(f) VCE = Parameter f dB G 10V 0.7V IC=70mA