BFQ68

BFQ68 PHILIPS | Alldatasheet

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Product specification File under Discrete Semiconductors, SC14 September 1995 DISCRETE SEMICONDUCTORS BFQ68 NPN 4 GHz wideband transistor

Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ68

DESCRIPTION

NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. It features very high output voltage capabilities. It is primarily intended for final stages in MATV system amplifiers, and is also suitable for use in low power band IV and V equipment. PINNING PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter Fig.1 SOT122A. fpage Top view MBK187 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCEO collector-emitter voltage open base − 18 V IC collector current − 300 mA Ptot total power dissipation up to T c =1 1 0°C − 4.5 W fT transition frequency I C = 240 mA; VCE = 15 V; f = 500 MHz; Tj=2 5°C 4 − GHz Vo output voltage I c = 240 mA; VCE = 15 V; dim = −60 dB; RL =7 5Ω ; f(p+q−r) = 793.25 MHz; Tamb =2 5°C 1.6 − V PL1 output power at 1 dB gain compression Ic = 240 mA; VCE = 15 V; RL =7 5Ω ; f = 800 MHz; Tamb =2 5°C 28 − dBm ITO third order intercept point I c = 240 mA; VCE = 15 V; RL =7 5Ω ; f = 800 MHz; Tamb =2 5°C 47 − dBm WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ68 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 18 V VEBO emitter-base voltage open collector − 2V IC DC collector current − 300 mA Ptot total power dissipation up to T c =1 1 0°C − 4.5 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER THERMAL RESISTANCE R th j-c thermal resistance from junction to case 20 K/W

Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ68 CHARACTERISTICS Tj=2 5°C unless otherwise specified. Notes 1. Measured with emitter and base grounded. 2. G UM is the maximum unilateral power gain, assuming S12 is zero and 3. dim = −60 dB (see Figs 2 and 7) (DIN 45004B); IC = 240 mA; VCE = 15 V; RL =7 5Ω ; Tamb =2 5°C; Vp =V o at dim = −60 dB; fp = 795.25 MHz; Vq =V o −6 dB; fq = 803.25 MHz; Vr =V o −6 dB; fr = 805.25 MHz; measured at f(p+q−r)= 793.25 MHz. 4. IC = 240 mA; VCE = 15 V; RL =7 5Ω ; Tamb =2 5°C; Pp = ITO− 6 dB; fp = 800 MHz; Pq = ITO− 6 dB; fq = 801 MHz; measured at f(2q−p) = 802 MHz and at f(2p−q) = 799 MHz. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current I E = 0; VCB = 15 V −− 50 µA hFE DC current gain I C = 240 mA; VCE = 15 V 25 75 − fT transition frequency I C = 240 mA; VCE = 15 V; f = 500 MHz − 4 − GHz C c collector capacitance I E =ie = 0; VCB = 15 V; f = 1 MHz − 3.8 − pF C e emitter capacitance I C =ic = 0; VEB = 0.5 V; f = 1 MHz − 20 − pF C re feedback capacitance I C = 0; VCE = 15 V; f = 1 MHz − 2.3 − pF C cs collector-stud capacitance note 1 − 0.8 − pF G UM maximum unilateral power gain (note 2) IC = 240 mA; VCE = 15 V; f = 800 MHz; Tamb =2 5°C − 13 − dB Vo output voltage note 3 − 1.6 − V PL1 output power at 1 dB gain compression (see Fig.2) IC = 240 mA; VCE = 15 V; RL =7 5Ω ; Tamb =2 5°C; measured at f = 800 MHz − 28 − dBm ITO third order intercept point (see Fig.2) note 4 − 47 − dBm G UM 10 log S 21 1S 11 –  1S 22 –

Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ68 Fig.2 Intermodulation distortion MATV test circuit. f = 40 to 860 MHz. L 1=L 2=5 µH Ferroxcube choke. handbook, full pagewidth MEA273 2.2 nF 2.2 kΩ 2.2 nF 75 Ω 180 Ω 2.2 nF 2.2 nF 2.2 nF 0.68 pF DUT 75 Ω VCCVBB 4.7 Ω 1.2 pF 1.2 pF 24 Ω 24 Ω1.8 pF Fig.3 DC current gain as a function of collector current. VCE = 10 V; Tj=2 5°C. handbook, halfpage 120 40 80 160 MBB361 120 I (mA)C FEh Fig.4 Transition frequency as a function of collector current. VCE = 15 V; f = 500 MHz; Tj=2 5°C handbook, halfpage MEA272 10 10 2 103 I (mA)C fT (GHz)

Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ68 Fig.5 Collector capacitance as a function of collector-base voltage. IE =ie = 0; f = 1 MHz handbook, halfpage MEA271 10 20 V (V)CB C c (pF) Fig.6 Gain as a function of frequency. IC = 240 mA; VCE = 15 V; Tamb =2 5°C handbook, halfpage MEA270 0.1 1 10 f (GHz) (dB) gain G UM Is I12 Fig.7 Intermodulation distortion as a function of collector current. VCE = 15 V; Vo = 1.6 V; f(p+q−r)= 793.25 MHz. handbook, halfpage MEA269 (dB) 0 100 300 200 d im I (mA)C

Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ68 handbook, full pagewidth MEA274 0.2 0.5 0.2 0.5 + j – j 100 200 500 1000 10.2 10 520.5 800

1200 MHz

Fig.8 Common emitter input reflection coefficient (S11). IC = 240 mA; VCE = 15 V; Tamb =2 5°C. Zo =5 0Ω . handbook, full pagewidth MEA275 30° 60° 90° 120° 150° 180° 150° 120° 90° 60° 30° 1000 800 500 0.05 0.1 0.15 − ϕ + ϕ Fig.9 Common emitter forward transmission coefficient (S21). IC = 240 mA; VCE = 15 V; Tamb =2 5°C.

Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ68 handbook, full pagewidth MEA277 ϕ ϕ 30° 60° 90° 120° 150° 180° 150° 120° 90° 60° 30° 100 0.05 0.1 0.15 200 500 800 1000 Fig.10 Common emitter reverse transmission coefficient (S12). IC = 240 mA; VCE = 15 V; Tamb =2 5°C. handbook, full pagewidth MEA276 0.2 0.5 0.2 0.5 + j – j

40 MHz

10.2 10 520.5 100 200 1200 1000 800 500 Fig.11 Common emitter output reflection coefficient (S22). IC = 240 mA; VCE = 15 V; Tamb =2 5°C. Zo =5 0Ω .

Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ68 PACKAGE OUTLINE UNIT A D 1 W REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 8-32 UNC α 90° SOT122A 97-04-18 H b H L detail X Db 5.85 5.58 0.18 0.14 5.97 4.74 cM 1 M 1.02 NN 3 11.82 11.04 w 1 0.381 Q 3.38 2.74 3.86 2.92 H 27.56 25.78 9.91 9.14 3.18 2.66 1.66 1.39 7.50 7.23 6.48 6.22 7.24 6.93 L N 1 max. 0 5 10 mm scale D 2 M ceramic BeO metal W Q A N N 1 N 3 M 1 D c X Studded ceramic package; 4 leads SOT122A α DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) A w 1 AM D 1 D 2

Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ68 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.