BFQ67T

BFQ67T PHILIPS | Alldatasheet

Document overview

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Technical content

Product specification Supersedes data of 1999 Nov 02

2000 Mar 06

NPN 8 GHz wideband transistor M3D173

2000 Mar 06 2

Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T

FEATURES

• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability
• SOT416 (SC-75) envelope.

APPLICATIONS

Wideband applications such as satellite TV tuners and RF portable communications equipment up to 2 GHz.

DESCRIPTION

NPN transistor in a plastic SOT416 (SC-75) package. PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector fpage MBK090Top view Fig.1 SOT416. Marking code: V2. QUICK REFERENCE DATA Note 1. Ts is the temperature at the soldering point of the collector pin. LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). Note 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 20 V VCEO collector-emitter voltage open base −− 10 V IC collector current (DC) −− 50 mA Ptot total power dissipation T s ≤ 75 °C; note 1 −− 150 mW hFE DC current gain I C = 15 mA; VCE =5V ; Tj=2 5°C 60 100 − fT transition frequency I C = 15 mA; VCE = 8 V; f = 2 GHz; Tamb =2 5°C − 8 − GHz G UM maximum unilateral power gain IC = 15 mA; VCE = 8 V; f = 1 GHz; Tamb =2 5°C − 13 − dB F noise figure I C = 5 mA; VCE = 8 V; f = 1 GHz− 1.3 − dB SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 50 mA Ptot total power dissipation T s ≤ 75 °C; note 1 − 150 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C

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Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T THERMAL CHARACTERISTICS CHARACTERISTICS Tj=2 5°C; unless otherwise specified. Note 1. G UM is the maximum unilateral power gain, assuming S12 is zero and SYMBOL PARAMETER VALUE UNIT R th j-s thermal resistance from junction to soldering point 500 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current I E = 0; VCB =5V −− 50 nA hFE DC current gain I C = 15 mA; VCE = 5 V 60 100 − C c collector capacitance I E =ie = 0; VCB =8V ; f=1M H z − 0.7 − pF C e emitter capacitance I C =ic = 0; VEB = 0.5 V; f = 1 MHz− 1.3 − pF C re feedback capacitance I C = 0; VCE = 8 V; f = 1 MHz − 0.5 − pF fT transition frequency I C = 15 mA; VCE = 8 V; f = 2 GHz; Tamb =2 5°C − 8 − GHz G UM maximum unilateral power gain IC = 15 mA; VCE =8V ; Tamb =2 5°C; note 1 f = 1 GHz − 13 − dB f = 2 GHz − 8 − dB F noise figure Γs = Γopt; IC = 5 mA; VCE =8V ; f = 1 GHz − 1.3 − dB f = 2 GHz − 2.2 − dB Γs = Γopt;IC = 15 mA; VCE =8V ; f = 1 GHz − 2 − dB f = 2 GHz − 2.7 − dB VCE = 8 V; f = 2 GHz; Zs =6 0Ω ; IC =5m A − 2.5 − dB IC =1 5m A − 3 − dB G UM 10 log S 21

1 S 11

2–() 1 S 22 2–()

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Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T 0 50 100 200 100 MGU068 150 Ptot (mW) Ts (°C) 150 200 Fig.2 Power derating curve. handbook, halfpage 120 20 40 MBB301 60I (mA)C FEh Fig.3 DC current gain as a function of collector current. VCE = 5 V; Tj=2 5°C. handbook, halfpage 0.2 0.4 0.6 0.8 048 1 2 MRC039 (pF) V (V)CB C re Fig.4 Feedback capacitance as a function of collector-base voltage. IC = 0; f = 1 MHz. handbook, halfpage 01 0 2 0 4 0 MBB303 I (mA)C (GHz) Tf Fig.5 Transition frequency as a function of collector current. VCE = 8 V; f = 2 GHz; Tamb =2 5°C.

2000 Mar 06 5

Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. handbook, halfpage MRC042 0 5 10 15 20 25 30 35 MSG G max gain (dB) IC (mA) G UM Fig.6 Gain as a function of collector current. VCE = 8 V; f = 1 GHz; Tamb =2 5°C. handbook, halfpage −2 10−1 11 0f (GHz) MRC040 MSG G UM G max gain (dB) Fig.7 Gain as a function of frequency. IC = 5 mA; VCE = 8 V; Tamb =2 5°C. handbook, halfpage MRC041 10−2 10−1 11 0f (GHz) MSG G UM G max gain (dB) Fig.8 Gain as a function of frequency. IC = 15 mA; VCE = 8 V; Tamb =2 5°C. handbook, halfpage MRC043 10−2 10−1 11 0 f (GHz) MSG G UM G max gain (dB) Fig.9 Gain as a function of frequency. IC = 30 mA; VCE = 8 V; Tamb =2 5°C.

2000 Mar 06 6

Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T handbook, halfpage MRC044 11 0 1 0 2 IC (mA) F (dB) Fig.10 Minimum noise figure as a function of collector current. VCE = 8 V; f = 1 GHz. handbook, full pagewidth MRC046 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° 135° 90° 45° −45° −90° −135° Fmin = 1.5 dB F = 2 dB F = 2.5 dB F = 3 dB opt Fig.11 Noise circle. IC = 5 mA; VCE =8V ; f = 1 GHz; Zo =5 0Ω .

2000 Mar 06 7

Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T handbook, full pagewidth MRC047 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2

3 GHz

0.5 1 2 5 180° 135° 90° 45° −45° −90° −135°

40 MHz

Fig.12 Common emitter input reflection coefficient (S11). IC = 15 mA; VCE = 8 V; Zo =5 0Ω . handbook, full pagewidth MRC048 180° 135° 90° 45° −45° −90° −135° 50 40 30 20 10 Fig.13 Common emitter forward transmission coefficient (S21). IC = 15 mA; VCE =8V .

2000 Mar 06 8

Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T handbook, full pagewidth MRC049 180° 135° 90° 45° −45° −90° −135° Fig.14 Common emitter reverse transmission coefficient (S12). IC = 15 mA; VCE =8V . handbook, full pagewidth MRC050 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° 135° 90° 45° −45° −90° −135° Fig.15 Common emitter output reflection coefficient (S22). IC = 15 mA; VCE = 8 V; Zo =5 0Ω .

2000 Mar 06 9

Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T PACKAGE OUTLINE UNIT A 1 max bp cD E e1 H E Lp Qw REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 0.1 0.30 0.15 0.25 0.10 1.8 1.4 0.9 0.7 0.5 e 1 1.75 1.45 0.2 v 0.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 0.23 0.13 SOT416 SC-75 w Mbp D e A Lp Q detail X H E E AB B v M A 0 0.5 1 mm scale A 0.95 0.60 c X Plastic surface mounted package; 3 leads SOT416 97-02-28

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Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

2000 Mar 06 11

Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T NOTES

© Philips Electronics N.V. SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Internet: http://www.semiconductors.philips.com 2000 69 Philips Semiconductors – a worldwide company For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

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