BFQ621

BFQ621 PHILIPS | Alldatasheet

Document overview

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Technical content

Product specification Supersedes data of 1995 Apr 11 File under Discrete Semiconductors, SC14

1995 Sep 26

NPN 7 GHz wideband transistor

1995 Sep 26 2

Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621

FEATURES

• High power gain
• High output voltage
• High maximum junction temperature
• Gold metallization ensures excellent reliability.

APPLICATIONS

It is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc.

DESCRIPTION

Silicon NPN transistor in a 4-lead dual-emitter SOT172A2 package with a ceramic cap. All leads are isolated from the mounting base. Emitter ballasting resistors and application of gold sandwich metallization ensures an optimum temperature profile and excellent reliability properties. PINNING PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter Fig.1 SOT172A2. handbook, halfpage MSA457 Top view QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCEO collector-emitter voltage open base −− 16 V IC collector current (DC) −− 150 mA Ptot total power dissipation up to T mb =2 5°C −− 8W hFE DC current gain I C = 120 mA; VCE =1 8V ; Tamb =2 5°C 40 −− fT transition frequency I C = 120 mA; VCE =1 8V ; f = 1 GHz; Tamb =2 5°C − 7 − GHz G UM maximum unilateral power gain IC = 120 mA; VCE =1 8V ; f = 500 MHz; Tamb =2 5°C − 18.5 − dB VO output voltage I C = 120 mA; VCE =1 8V ; f( p+q− r)= 793.25 MHz; dim = −60 dB; RL =7 5Ω − 1.2 − V WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

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Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 16 V VEBO emitter-base voltage open collector − 2V IC collector current (DC) − 150 mA Ptot total power dissipation up to T mb =2 5°C − 8W Tstg storage temperature −65 +175 °C Tj junction temperature − +200 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-mb thermal resistance from junction to mounting base Ptot= 8 W; up to Tmb =2 5°C 21.9 K/W

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Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621 CHARACTERISTICS Tj=2 5°C (unless otherwise specified). Notes 1. G UM is the maximum unilateral power gain, assuming s12 is zero. 2. dim = −60dB (DIN45004B); see Fig.2; IC = 120 mA; VCE = 18 V; RL =7 5Ω ;Tamb =2 5°C; Vp =V O ; fp = 445.25 MHz; Vq =V O −6 dB; fq = 453.25 MHz; Vr =V O −6 dB; fr = 455.25 MHz; measured at f( p+q− r)= 443.25 MHz; see Fig.5. 3. dim = −60dB (DIN45004B); see Fig.2; IC = 120 mA; VCE = 18 V; RL =7 5Ω ;Tamb =2 5°C; Vp =V O ; fp = 795.25 MHz; Vq =V O −6 dB; fq = 803.25 MHz; Vr =V O −6 dB; fr = 805.25 MHz; measured at f( p+q− r)= 793.25 MHz; see Fig.6. 4. V O = 50 dBmV = 316 mV; IC = 90 mA; VCE = 18 V; RL =7 5Ω ;Tamb =2 5°C; measured at f( p+q )= 450 MHz; see Fig.7. 5. V O = 50 dBmV = 316 mV; IC = 90 mA; VCE = 18 V; RL =7 5Ω ;Tamb =2 5°C; measured at f( p+q )= 810 MHz; see Fig.8. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage IC = 0.1 mA; IE =0 −− 25 V V(BR)CEO collector-emitter breakdown voltage IC = 10 mA; IB =0 −− 16 V V(BR)EBO emitter-base breakdown voltage IE = 0.1 mA; IC =0 −− 2V ICBO collector-base leakage current IE = 0; VCB =1 8V −− 100 µA hFE DC current gain I C = 50 mA; VCE =1 0V 5 0 − 160 fT transition frequency I C = 120 mA; VCE =1 8V ; f = 1 GHz; see Fig.3 − 7 − GHz C c collector capacitance I E =ie = 0; VCB =1 8V ; f = 1 MHz − 1.5 − pF C e emitter capacitance I C =ic = 0; VEB = 0.5 V; f = 1 MHz − 5 − pF C re feedback capacitance I C = 0; VCE = 18 V; f = 1 MHz; see Fig.4 − 0.85 1.2 pF G UM maximum unilateral power gain; note 1 IC = 120 mA; VCE =1 8V ; f = 500 MHz; Tamb =2 5°C; − 18.5 − dB IC = 120 mA; VCE =1 8V ; f = 800 MHz; Tamb =2 5°C; − 14.5 − dB VO output voltage note 2 − 1.35 − V note 3 − 1.2 − V d2 second order intermodulation distortion note 4 −− 60 − dB note 5 −− 60 − dB G UM 10 s21 1s 11 2–() 1s 22

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Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621 Fig.2 Intermodulation distortion and second order distortion MATV test circuit. L1 = 8 nH. L2 = 15 nH, 2 turns copper wire, internal diameter 2 mm. L3 = 10 nH, 2 turns copper wire, internal diameter 1.5 mm. L5: Lp = 21 mm; Rc = 75Ω . L6: Lp = 16 mm; Rc = 75Ω . MEA260 handbook, full pagewidth MEA260 DUT /n00 VBB 10 kΩ 10 nF 1 pF input 75 Ω 240 Ω Ω Ω 10 nF /n00 1 pF 10 nF output 75 Ω VCC 10 nF L6 4.7 µF 10 nF Fig.3 Transition frequency as a function of collector current; typical values. VCE = 18 V; f = 1 GHz. handbook, halfpage 0 100 200 50 150 MLC991 (GHz) Tf I (mA)C Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. IC = 0; f = 1 MHz. handbook, halfpage MLC990 2.0 1.5 1.0 0.5 5 10 15 20 25 V (V)CB C re (pF)

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Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621 Fig.5 Intermodulation distortion as a function of collector current; typical values. VO = 1.35 V; VCE = 18 V; f( p+q− r)= 443.25 MHz; see Fig.2. handbook, halfpage 0 100 200 50 150 MLC992 (dB) imd I (mA)C Fig.6 Intermodulation distortion as a function of collector current; typical values. VO = 1.2 V; VCE = 18 V; f( p+q− r)= 793.25 MHz; see Fig.2. handbook, halfpage 0 100 200 50 150 MLC993 (dB) imd I (mA)C Fig.7 Second order distortion as a function of collector current; typical values. VO = 50dBmV = 316 mV; VCE = 18 V; f( p+q )= 450 MHz; see Fig.2. handbook, halfpage 0 100 150 50 MLC994 (dB) I (mA)C Fig.8 Second order distortion as a function of collector current; typical values. VO = 50dBmV = 316 mV; VCE = 18 V; f( p+q )= 810 MHz; see Fig.2. handbook, halfpage 0 100 150 50 MLC995 (dB) I (mA)C

1995 Sep 26 7

Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621 Fig.9 Common emitter input reflection coefficient (s11); typical values. VCE = 18 V; IC = 120 mA; Zo =5 0Ω . handbook, full pagewidth MLC996 00o 0.2 0.6 0.4 0.8 1.0 1.0 45o 90o 135o 180o 45o 90o 135o 0.5 0.2 0.5 0.2 0.5 2

40 MHz

3 GHz

0.2 1 5 VCE = 18 V; IC = 120 mA. Fig.10 Common emitter forward transmission coefficient (s21); typical values. handbook, full pagewidth MLC997 0 o 90o 135o 180 o 90o 50 40 30 20 10 45o 135o 45o

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Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621 VCE = 18 V; IC = 120 mA. Fig.11 Common emitter reverse transmission coefficient (s12); typical values. handbook, full pagewidth MLC998 0 o 90o 135o 180 o 90o 45o 135o 45o VCE = 18 V; IC = 120 mA; Zo =5 0Ω . Fig.12 Common emitter output reflection coefficient (s22); typical values. handbook, full pagewidth MLC999 00o 0.2 0.6 0.4 0.8 1.0 1.0 45o 90o 135o 180o 45o 90o 135o 0.5 0.2 0.5 0.2 0.5 2 0.2 1 5

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Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621 SPICE parameters for the BFQ621 crystal Note 1. These parameters have not been extracted, the default values are shown. SEQUENCE No. PARAMETER VALUE UNIT 1 IS 1.358 fA 2 BF 112.2 − 3 NF 0.991 − 4 VAF 78.06 V 5 IKF 4.291 A 6 ISE 643.3 fA 7 NE 1.851 − 8 BR 5.776 − 9 NR 0.999 − 10 VAR 2.350 V 11 IKR 50.26 mA 12 ISC 2.454 fA 13 NC 1.175 − 14 RB 8.000 Ω 15 IRB 1.000 µA 16 RBM 8.000 Ω 17 RE 1.585 Ω 18 RC 1.880 Ω (1) XTB 0.000 − 20(1) EG 1.110 eV 21(1) XTI 3.000 − 22 CJE 3.985 pF 23 VJE 0.600 V 24 MJE 0.327 − 25 TF 14.02 ps 26 XTF 398.1 − 27 VTF 2.940 mV 28 ITF 3.084 A 29 PTF 45.00 deg 30 CJC 1.529 pF 31 VJC 0.216 V 32 MJC 0.158 − 33 XCJC 0.120 − 34 TR 9.070 ns (1) CJS 0.000 F 36(1) VJS 750.0 mV 37(1) MJS 0.000 − 38 FC 0.735 − List of components(see Fig.13) Note 1. The micro striplines are on a double copper-clad substrate;εr = 6.5; h = 1.18 mm. DESIGNATION VALUE UNIT C be 225 fF C cb 36 fF C ce 362 fF LB 1.85 nH LE 1.22 nH Fig.13 Package equivalent circuit SOT172A2. handbook, halfpage MLD001 B E CB' C' L B LE L1 L2 C cb C be ce C

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Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621 PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification. Dimensions in mm. Fig.14 SOT172A2. handbook, full pagewidth 0.9 0.6(2x) 1.70 1.35(2x) 8.5 min (4x) MBC8665.2 max 5.25 max 5.35 max 0.13 6.9 min 1.5 8 - 32 UNC 2.9 11.8 10.8 2.9 2.3 90o