BFQ31 KEC | Alldatasheet
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KOREA ELECTRONICS CO.LTD. TECHNICAL DATA | EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. MAXIMUM RATINGS (Ta=25C) CHARACTERISTIC SYMBOL | RATING | UNIT q 4 Emitter-Base Voltage oe ao) 4 Ch LJ LJ o oO ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL ‘TEST CONDITION MIN. MAX. | UNIT Collector-Emitter Breakdown Voltage ke=3mA, Is-0 fo | - | - |v | Collector-Base Breakdown Voltage [e=1MA, Te=0 [ 3 | - | - | v | Emitter-Base Breakdown Voltage Tr=10HA, [e=0 [30 [| - [| - | v | Collector Cut-off Current Veu=15V, Te=0 [ - | - [1 [oa | Base-Emitter , _ - Lo |v | Saturation Voltage Collector Input Capacitance Vew05V, k=0, fiMez | - [ - [| 20 | or | Von=0V, In=0, f=1MHz [ - [| - [30 | Collector Output Capacitance Cor pF Vewwl0V, I=0, fIMHz [| - | - [a7 | a | Vor6V, k=ImA, ; 1998. 6. 15 Revision No : 1 KEC Vi